EMH1405 Ordering number : ENA1667 SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=14mΩ(typ) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg 34 A W 150 °C --55 to +150 °C • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.2 0.125 Taping Type : TL 5 Marking KE 2.1 1.7 A 1.5 Product & Package Information 1 V 8.5 When mounted on ceramic substrate (1200mm2×0.8mm) unit : mm (typ) 7045-001 0.2 V ±20 PW≤10μs, duty cycle≤1% Package Dimensions 8 Unit 30 LOT No. TL 0.2 4 0.5 0.05 0.75 2.0 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 60210PE TK IM TC-00002377 No. A1667-1/4 EMH1405 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Ratings Conditions min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V VDS=10V, ID=4A ID=4A, VGS=10V 4.4 S 14 19 24 34 mΩ RDS(on)3 ID=2A, VGS=4.5V ID=2A, VGS=4V 30 42 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 820 pF Output Capacitance Coss VDS=10V, f=1MHz 130 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.5 ns Rise Time tr See specified Test Circuit. 25 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 63 ns Fall Time tf See specified Test Circuit. 28 ns mΩ Total Gate Charge Qg nC Qgs VDS=15V, VGS=10V, ID=8.5A VDS=15V, VGS=10V, ID=8.5A 15 Gate-to-Source Charge 2.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=15V, VGS=10V, ID=8.5A 2.7 Diode Forward Voltage VSD IS=8.5A, VGS=0V 0.8 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=4A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G EMH1405 P.G 50Ω ID -- VDS 8 1.0 4 3 2 VGS=2.5V 0.5 0 5 25°C 1.5 6 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 --25°C 16.0V 2.0 7 C 10.0V 2.5 Ta=75 ° 3.0V 6.0V 3.0 VDS=10V 9 Drain Current, ID -- A 3.5 ID -- VGS 10 4.5V 4.0V 4.0 Drain Current, ID -- A S 1.0 IT15387 0 0 1 4 5 Gate-to-Source Voltage, VGS -- V 2 3 IT15388 No. A1667-2/4 EMH1405 RDS(on) -- VGS 100 RDS(on) -- Ta 60 90 ID=4A 70 2A 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V C 5° --2 °C 75 = Ta 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 7 °C 25 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 20 40 60 80 100 120 140 160 IT15390 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 td(on) 10 tr 7 7 2 1.0 3 Drain Current, ID -- A VGS -- Qg 5 7 Drain Current, ID -- A 5 4 3 2 1 5 6 7 8 9 10 11 12 13 14 15 Total Gate Charge, Qg -- nC 5 0 IT15395 10 20 15 10 7 5 3 2 IT15394 ASO IDP=34A (PW≤10μs) 10 μs 0μ s 10 1m ID=8.5A s 10 DC ms 10 op 0m era s tio 1.0 7 5 3 2 0.1 7 5 3 2 30 25 Drain-to-Source Voltage, VDS -- V 7 5 3 2 6 4 Crss 7 IT15393 7 3 Ciss Coss 2 8 2 f=1MHz 100 10 VDS=15V ID=8.5A 1 Ciss, Coss, Crss -- VDS 2 3 5 1.2 IT15392 3 3 3 1.0 5 5 2 0.8 7 5 2 0.1 0.6 2 Ciss, Coss, Crss -- pF tf 2 0.4 1000 5 3 0.2 3 td(off) 7 0 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 0 --20 3 2 0.01 5 7 10 IT15391 SW Time -- ID 100 0 --40 3 2 0.1 7 0.01 2 Switching Time, SW Time -- ns 10 10 7 5 3 9 A =10.0 4V, I D V GS= 20 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 30 Ambient Temperature, Ta -- °C 5 10 .0A I =4 =2V, D S VG =4.5A 2V, I D = VGS 0 --60 16 VDS=10V 7 40 IT15389 | yfs | -- ID 10 50 Ta= 75° C 25°C --25° C 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C n( Operation in this area is limited by RDS(on). Ta =2 5° C) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15510 No. A1667-3/4 EMH1405 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (1200mm2×0.8mm) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15511 Note on usage : Since the EMH1405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2010. Specifications and information herein are subject to change without notice. PS No. A1667-4/4