Z ibo Seno Electronic Engineering Co., Ltd. GBJ8A - GBJ8M 8.0A GLASS PASSIVATED BRIDGE RECTIFIER Features · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 350A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 · Lead Free:: :For RoHS / Lead Free Version GBJ4 P N A B _ Mechanical Data K · · · · · · · Case: Molded Plastic Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 Polarity: Molded on Body Mounting: Through Hole for #6 Screw Mounting Torque: 5.0 in-lbs Maximum Weight: 6.6 grams (approx) Marking: Type Number L M J E R D Min Max A 24.80 25.20 B 14.70 15.30 C H C Dim G 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 Æ 3.40 Æ J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol GBJ 8A GBJ 8B GBJ 8D GBJ 8G GBJ 8J GBJ 8K GBJ 8M Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 8.0 A Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load IFSM 170 A Forward Voltage per element VFM 1.0 V IR 5.0 500 mA I2 t 120 A2s Average Forward Rectified Output Current Peak Reverse Current at Rated DC Blocking Voltage @ TC = 110°C @ IF = 4.0A @ TC = 25°C @ TC = 125°C I2t Rating for Fusing (t < 8.3ms) (Note 1) Typical Total Capacitance per Element (Note 2) Typical Thermal Resistance Junction to Case (Note 3) Operating and Storage Temperature Range Notes: 1. 2. 3. 4. CT 55 pF RqJC 1.6 °C/W Tj, TSTG -65 to +150 °C Non-repetitive, for t > 1.0ms and < 8.3ms. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. GBJ8A - GBJ8M 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 8 With heatsink 6 4 Without heatsink 2 Resistive or Inductive load 0 25 50 75 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) GBJ8A - GBJ8M 100 125 1.0 0.1 Tj = 25° C 0.01 150 0 0.4 0.8 1.2 1.6 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) 100 180 Tj = 25° C f = 1MHz Single half-sine-wave 160 Tj = 150° C CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 120 80 40 10 1 0 1 1 100 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance (per element) 1000 100 Tj = 125° C Tj = 100° C 10 Tj = 50° C 1.0 Tj = 25° C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics GBJ8A - GBJ8M 2 of 2 www.senocn.com Alldatasheet