J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 High Power Silicon Controlled Rectifier 1300 Volts 235 A RMS I C180 AMPLIFYING GATE C180 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused Pic-Pac device, employing the field-proven amplifying gate. FEATURES: • • • • High di/dt Ratings High dv/dt Capability with Selections Available Excellent Surge and I 2 t Ratings Providing Easy Fusing Rugged Hermetic Package with Long Creepage Path MAXIMUM ALLOWABLE RATINGS 1 TYPE REPETITIVE PEAK OFF-STATE VOLTAGE, V DRM ' Tj - -40°C to -H25°C REPETITIVE PEAK REVERSE VOLTAGE, V R R M i Tj = -40°C to +125°C NON-REPETITIVE PEAK REVERSE VOLTAGE, VRSM1 Tj = +125°C C180A C180B C180C C180D C180E C180M C180S C180N C180T C180P C180PA C180PB C180PC 100 Volts 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 Volts 200 300 400 500 600 700 800 900 1000 1100 1200 1300 200 Volts 300 400 500 600 720 840 950 1075 1200 1325 1450 1550 Half sinewave waveform, 10 msec. max. pulse width. RMS On-State Current, IT(RMS) Average On-State Current, IT(AV) • • • Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) Critical Rate-of-Rise of On-State Current (Non-Repetitive)* Critical Rate-of-Rise of On-State Current (Repetitive)* I 2 t (for fusing), for times > 1.5 milliseconds Peak Gate Power Dissipation, PGM Average Gate Power Dissipation, PG(AV) Storage Temperature, Tstg Operating Temperature, Tj Stud Torque ' Quality Semi-Conductors 235 Amperes (All Conduction Angles) Depends on Conduction Angle (See Charts) 3500 Amperes 3200 Amperes 800 A/JUS 500 A/MS 32,000 (RMS Ampere)2 Seconds 10 Watts 2 Watts -40°C to +150°C -40°C to +125°C 250 Lb.-In. (Min.) - 300 Lb.-In, (Max.) 28 N-m (Min.) - 34 N-m (Max.) I | C180 CHARACTERISTICS TEST Repetitive Peak Reverse and Off-State Current C180A C180B C180C C180D C180E C180M C180S C180N C180T C180P C180PA C180PB C180PC Repetitive Peak Reverse and Off-State Current SYMBOL WIN. TYP. MAX. UNITS rnA JDRM and JRRM V DRM — — 3 3 3 3 3 3 3 3 3 3 3 3 3 10 10 10 10 10 10 10 10 9 7 7 6 5 mA !DRM and !RRM C180A C180B C180C C180D C180E C180M C180S C180N C180T C180P C180PA C180PB C180PC Thermal Resistance Critical Rate-of-Rise of Off-State Voltage. (Higher values may cause device switching.) TEST CONDITIONS Tj = +25°C = V RRM = 100 Volts Peak 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Tj = -H25CC V DRM = — - R0jc - dv/dt 200 15 15 15 15 15 15 15 15 15 12 11 10 8 .12 500 20 20 20 20 20 20 20 20 18 15 14 13 11 .14 °C/Watt V//isec VRRM = 100 Volts Peak 200 300 400 500 600 700 800 900 1000 1100 1200 1300 Junction-to-Case Tj = +125°C, VDRM = Rated Using Linear or Exponential Rising Waveform, Gate Open Circuited. Exponential dv/dt = (.632) Higher minimum dv/dt selections available - consult factory. Holding Current IH — 75 500 mAdc Turn-On Delay Time td ~" 1 " fj.se c " 8 10 /isec mAdc Gate Pulse Width Necessary to Trigger DC Gate Trigger Current JGT - 100 - DC Gate Trigger Voltage VGT — 1.25 150 200 125 3.0 0.15 - - — 2.3 2.85 Peak On-State Voltage VTM Vdc Volts Tc = +25°C, Anode Supply = 24 Vdc. Initial On-State Current - 2.5 Amps. Tc = +25°C, IT = lOOAdc, V DRM = Rated Gate Supply: 10 Volt Open Circuit, 25 Ohm, 0.1 /usec max. rise time. Tc = 25°C, Gate Supply: 20 Volt Open Circuit, 40 Ohm, .5 ftsec rise time. IT = 1 Amp. For High di/dt Capability, See Chart 7. Tc = +25°C, VD = 6 Vdc, R L = 3 Ohms Tc = -40°C, V D - 6 Vdc, RL = 3 Ohms Tc = -H25°C, V D * 6 Vdc, RL = 3 Ohms Tc = -40°C to +125°C, VD = 6 Vdc, R L = 3 Ohms Tc = -H25°C, VD = Rated, RL = 1000 Ohms Tc = +25 °C, ITM * 1500 Amps. Peak Duty Cycle < 0.01%