AP3C030YT
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
N-CH BVDSS
▼ Simple Drive Requirement
D2
▼ Good Thermal Performance
30V
RDS(ON)
ID
▼ Fast Switching Performance
S1
▼ RoHS Compliant & Halogen-Free G1
S2
G2
®
PMPAK 3x3
Description
30mΩ
3
7.3A
P-CH BVDSS
-30V
RDS(ON)
ID
AP3C030 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
60mΩ
3
-5.3A
D1
D2
G2
G1
®
The PMPAK
3x3 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
S2
S1
Absolute Maximum Ratings@Tj=25oC(unless
otherwise specified)
.
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
+20
V
7.3
-5.3
A
5.8
-4.2
A
28
-20
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2.5
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Value
Unit
10
℃/W
50
℃/W
1
201708281
AP3C030YT
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=4A
-
-
30
mΩ
VGS=4.5V, ID=3A
-
-
48
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
4.6
7.4
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
5
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
14
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
480
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V
-
9
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2
-
nC
2
AP3C030YT
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
Max.
Unit
-30
-
-
V
VGS=-10V, ID=-4A
-
-
60
mΩ
VGS=-4.5V, ID=-3A
-
-
80
mΩ
VGS=0V, ID=-250uA
2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-4A
-
6.6
10.6
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.8
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
9
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=-10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
790
1260
pF
Coss
Output Capacitance
VDS=-25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
Max.
Unit
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
12
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 90oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP3C030YT
N-Channel
20
30
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
T A = 150 C
16
ID , Drain Current (A)
o
T A =25 C
20
V G = 4.0V
10
12
8
4
0
0
0
2
4
6
0
8
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
1.8
48
ID=3A
I D =4A
V G =10V
38
.
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.4
1.0
28
18
0.6
2
4
6
8
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D = 250uA
1.6
Normalized VGS(th)
IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP3C030YT
N-Channel
f=1.0MHz
800
ID=4A
V DS = 15 V
6
600
C (pF)
VGS , Gate to Source Voltage (V)
8
400
4
C iss
200
2
C oss
C rss
0
0
0
2
4
6
1
8
5
9
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
ID (A)
Operation in this area
limited by RDS(ON)
1
100us
1ms
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.01
0.1
1
10
.
Normalized Thermal Response (Rthja)
1
Duty factor=0.5
0.1
0.2
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 90℃/W
Single Pulse
0.01
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP3C030YT
P-Channel
16
20
T A = 150 C
-ID , Drain Current (A)
16
-ID , Drain Current (A)
o
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
T A = 25 C
12
8
12
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
8
4
4
0
0
0
1
2
3
4
0
5
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
54
I D = -4 A
V G = -10 V
ID=-3A
T A =25 o C
50
42
.
38
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
46
1.2
0.8
34
0.4
30
2
4
6
8
10
-100
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
I D = - 250uA
8
1.6
T j =25 o C
Normalized VGS(th)
-IS(A)
T j =150 o C
6
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP3C030YT
P-Channel
8
f=1.0MHz
1600
6
1200
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -4A
V DS = -15V
4
800
2
400
C iss
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
33
37
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.01
0.1
1
10
.
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.1
0.2
0.1
PDM
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 90℃/W
Single Pulse
0.01
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7
AP3C030YT
MARKING INFORMATION
Part Number
3C030
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
8