ON NCV2003SN2T1G Operational amplifiers high slew rate, rail-to-rail output Datasheet

NCS2003/A, NCV2003,
NCS20032, NCV20032,
NCS20034, NCV20034
Operational Amplifiers,
High Slew Rate, Low
Voltage, Rail-to-Rail Output
The NCS2003 family of op amps features high slew rate, low
voltage operation with rail−to−rail output drive capability. The 1.8 V
operation allows high performance operation in low voltage, low
power applications. The fast slew rate and wide unity−gain bandwidth
(5 MHz at 1.8 V) make these op amps suited for high speed
applications. The low input offset voltage (4 mV max) allows the op
amp to be used for current shunt monitoring. Additional features
include no output phase reversal with overdriven inputs and ultra low
input bias current of 1 pA.
The NCS2003 family is the ideal solution for a wide range of
applications and products. The single channel NCS2003, dual channel
NCS20032, and quad channel NCS20034 are available in a variety of
compact and space−saving packages. The NCV prefix denotes that the
device is AEC−Q100 Qualified and PPAP Capable.
Features
•
•
•
•
•
•
•
•
Unity Gain Bandwidth: 7 MHz at VS = 5 V
Fast Slew Rate: 8 V/ms rising, 12.5 V/ms falling at VS = 5 V
Rail−to−Rail Output
No Output Phase Reversal for Over−Driven Input Signals
Low Offset Voltage: 0.5 mV typical
Low Input Bias Current: 1 pA typical
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MARKING
DIAGRAMS
5
5
1
ANxYWG
G
SOT23−5
CASE 483
(NCS/NCV2003)
1
A3M
SOT553, 5 LEAD
CASE 463B
(NCS2003)
8
2K32
AYWG
G
Micro8]
DM SUFFIX
CASE 846A
1
8
8
20032
ALYWX
G
1
SOIC−8
CASE 751
1
K32
YWW
AG
G
TSSOP−8
T SUFFIX
CASE 948S
14
Applications
•
•
•
•
Current Shunt Monitor
Signal Conditioning
Active Filter
Sensor Buffer
1
SOIC−14 NB
CASE 751A
1
A
= Assembly Location
WL, L = Wafer Lot
Y
= Year
WW, W = Work Week
G or G = Pb−Free Package
End Products
•
•
•
•
NCS20034G
AWLYWW
14
Motor Control Drives
Hard Drives
Medical Devices
White Goods and Air Conditioners
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 11
1
Publication Order Number:
NCS2003/D
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
Single Channel Configuration
NCS2003/A, NCV2003
OUT
1
VSS
2
5
IN+
1
VSS
2
VDD
5
VDD
4
OUT
3
IN+
−
−
+
+
4
IN−
IN−
3
SOT23−5
(TSOP−5)
SOT553−5
Quadruple Channel Configuration
NCS20034, NCV20034
Dual Channel Configuration
NCS20032, NCV20032
OUT 1
1
IN− 1
2
−
IN+ 1
3
+
VSS
4
OUT 1 1
14 OUT 4
8
VDD
IN− 1 2
−
− 13 IN− 4
7
OUT 2
IN+ 1 3
+
+ 12 IN+ 4
−
6
IN− 2
+
5
IN+ 2
11 VSS
VDD 4
IN+ 2 5
+
+ 10 IN+ 3
IN− 2 6
−
−
OUT 2 7
9 IN− 3
8 OUT 3
Figure 1. Pin Connections
ORDERING INFORMATION
Configuration
Automotive
Marking
Package
Shipping†
Single
No
AN3
SOT23−5
(Pb−Free)
3000 / Tape and Reel
NCS2003ASN2T1G
No
AN4
SOT23−5
(Pb−Free)
3000 / Tape and Reel
NCS2003XV53T2G
No
A3
SOT553−5
(Pb−Free)
4000 /Tape and Reel
NCV2003SN2T1G*
Yes
AN3
SOT23−5
(Pb−Free)
3000 / Tape and Reel
No
2K32
Micro8
(Pb−Free)
4000 / Tape and Reel
20032
SOIC−8
(Pb−Free)
2500 / Tape and Reel
K32
TSSOP−8
(Pb−Free)
3000 / Tape and Reel
2K32
Micro8
(Pb−Free)
4000 / Tape and Reel
20032
SOIC−8
(Pb−Free)
2500 / Tape and Reel
K32
TSSOP−8
(Pb−Free)
3000 / Tape and Reel
No
NCS20034G
SOIC−14
(Pb−Free)
2500 / Tape and Reel
Yes
NCS20034G
SOIC−14
(Pb−Free)
2500 / Tape and Reel
Device
NCS2003SN2T1G
NCS20032DMR2G
Dual
NCS20032DR2G
NCS20032DTBR2G
Yes
NCV20032DMR2G*
NCV20032DR2G*
NCV20032DTBR2G*
NCS20034DR2G
NCV20034DR2G*
Quad
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and
PPAP Capable.
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2
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated
Parameter
Symbol
Limit
Unit
VS
7.0
V
Input Voltage (Note 1)
VIN
VSS − 0.3 to 7.0
V
Input Current
IIN
10
mA
Output Short Current (Note 2)
IO
100
mA
Storage Temperature
TSTG
−65 to 150
°C
Junction Temperature
TJ
150
°C
Supply Voltage (VDD − VSS)
INPUT AND OUTPUT PINS
TEMPERATURE
ESD RATINGS (Note 3)
Human Body Model
NCx2003, A
NCx20032
NCx20034
HBM
3000
2000
3000
V
Machine Model
NCx2003, A
NCx20032
NCx20034
MM
200
100
150
V
Charged Device Model
NCx2003, A
NCx2003x
CDM
1000
2000
V
MSL
Level 1
ILU
100
OTHER PARAMETERS
Moisture Sensitivity Level (Note 5)
Latch−up Current (Note 4)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Neither input should exceed the range of VSS − 300 mV to 7.0 V. This device contains internal protection diodes between the input pins and
VDD. When VIN exceeds VDD, the input current should be limited to the specified value.
2. Indefinite duration; however, maximum package power dissipation limits must be observed to ensure that the maximum junction temperature
is not exceeded.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 and JESD22−A114
ESD Machine Model tested per AEC−Q100−003 and JESD22−A115
ESD Charged Device Model tested per AEC−Q100−011 and ANSI/ESD S5.3.1−2009
4. Latch−up current tested per JEDEC Standard JESD78.
5. Moisture Sensitivity Level tested per IPC/JEDEC standard J−STD−020A.
THERMAL INFORMATION
Thermal Metric
Junction to Ambient
Thermal Resistance
Symbol
qJA
Package
Single Layer Board (Note 6)
Multi Layer Board (Note 7)
SOT23−5/TSOP−5
408
355
SOT553−5
428
406
Micro8/MSOP8
235
163
SOIC−8
240
179
TSSOP−8
300
238
SOIC−14
167
123
Unit
°C/W
6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area
RECOMMENDED OPERATING CONDITIONS
Parameter
Operating Supply Voltage (VDD − VSS)
Specified Operating Range
NCS2003, A
NCV2003, NCx20032, NCx20034
Input Common Mode Range
Symbol
Min
Max
Unit
VS
1.7
5.5
V
TA
−40
−40
+85
+125
°C
VCM
VSS
VDD−0.6
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
VOS
Min
Typ
Max
Unit
NCS2003A
0.5
3.0
mV
NCx2003, NCx20032, NCx20034
0.5
4.0
mV
5.0
mV
INPUT CHARACTERISTICS
Input Offset Voltage
Offset Voltage Drift
DVOS/DT
Input Bias Current
IIB
1
pA
Input Offset Current
IOS
1
pA
Channel Separation
XTLK
100
dB
mV/°C
2.0
NCS2003A (Note 8)
6.0
DC, NCx20032, NCx20034
mV/°C
Input Resistance
RIN
1
TW
Input Capacitance
CIN
1.2
pF
80
dB
92
dB
Common Mode Rejection
Ratio
CMRR
VIN = VSS to VDD – 0.6 V
70
VIN = VSS + 0.2 V to VDD – 0.6 V
65
RL = 10 kW
80
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
75
RL = 2 kW
92
70
Output Current Capability
(Note 8)
ISC
Output Voltage High
VOH
Output Voltage Low
VOL
Sourcing
5
8
Sinking
10
14
RL = 10 kW
1.75
1.798
RL = 2 kW
1.7
1.78
RL = 10 kW
mA
V
NCx2003, A
7
50
NCx2003x
7
100
RL = 2 kW
20
100
mV
NOISE PERFORMANCE
Voltage Noise Density
eN
f = 1 kHz
20
nV/√Hz
Current Noise Density
iN
f = 1 kHz
0.1
pA√Hz
5
MHz
DYNAMIC PERORMANCE
Gain Bandwidth Product
GBWP
Slew Rate at Unity Gain
SR
Phase Margin
ym
Gain Margin
Am
Settling Time
tS
Rising Edge, RL = 2 kW, AV = +1
6
Falling Edge, RL = 2 kW, AV = +1
9
RL = 10 kW, CL = 5 pF
53
°
NCx2003, A
12
dB
NCx2003x
8
Settling time to
0.1%
1.8
RL = 10 kW, CL = 5 pF
VO = 1 Vpp,
Gain = 1, CL = 20 pF
V/ms
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
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4
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +1.8 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
THD+N
VO = 1 Vpp, RL = 2 kW, AV = +1, f = 1 kHz
0.005
VO = 1 Vpp, RL = 2 kW, AV = +1, f = 10 kHz
0.025
Max
Unit
DYNAMIC PERORMANCE
Total Harmonics Distortion +
Noise
%
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
NCx2003
72
dB
80
65
NCx20032, NCx20034
Quiescent Current
IDD
No load, per channel
80
100
NCx2003, A
230
560
mA
1000
NCx20032,
NCx20034
275
375
575
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Guaranteed by design and/or characterization.
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
VOS
Min
Typ
Max
Unit
NCS2003A
0.5
3.0
mV
NCx2003
0.5
4.0
mV
5.0
mV
INPUT CHARACTERISTICS
Input Offset Voltage
NCx20032, NCx20034
Offset Voltage Drift
DVOS/DT
NCS2003A (Note 9)
Input Bias Current
IIB
Input Offset Current
IOS
Channel Separation
XTLK
mV/°C
2.0
DC, NCx20032, NCx20034
6.0
mV/°C
1
pA
1
pA
100
dB
Input Resistance
RIN
1
TW
Input Capacitance
CIN
1.2
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
VIN = VSS to VDD –
0.6 V
65
90
VIN = VSS + 0.2 V
to VDD – 0.6 V
63
NCx20032, NCx20034 VIN = VSS to VDD –
0.6 V
70
VIN = VSS + 0.2 V
to VDD – 0.6 V
65
Max
Unit
INPUT CHARACTERISTICS
Common Mode Rejection Ratio
CMRR
NCx2003, A
dB
90
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain
AVOL
RL = 10 kW
86
dB
92
78
RL = 2 kW
83
92
78
Output Current Capability
(Note 9)
ISC
Output Voltage High
VOH
Output Voltage Low
VOL
Sourcing
40
76
Sinking
50
96
RL = 10 kW
4.95
4.99
RL = 2 kW
4.9
4.97
RL = 10 kW
NCx2003, A
NCx2003x
mA
V
8
50
8
100
RL = 2 kW
24
100
mV
NOISE PERFORMANCE
Voltage Noise Density
eN
f = 1 kHz
20
nV/√Hz
Current Noise Density
iN
f = 1 kHz
0.1
pA√Hz
DYNAMIC PERORMANCE
Gain Bandwidth Product
GBWP
Slew Rate at Unity Gain
SR
Phase Margin
ym
Gain Margin
Am
Settling Time
tS
Total Harmonics Distortion +
Noise
THD+N
7
MHz
Rising Edge, RL = 2 kW, AV = +1
8
V/ms
Falling Edge, RL = 2 kW, AV = +1
12.5
RL = 10 kW, CL = 5 pF
NCx2003, A
64
NCx2003x
56
°
9
dB
0.6
ms
VO = 4 Vpp, RL = 2 kW, AV = +1, f = 1 kHz
0.002
%
VO = 4 Vpp, RL = 2 kW, AV = +1, f = 10 kHz
0.01
RL = 10 kW, CL = 5 pF
VO = 1 Vpp,
Gain = 1, CL = 20 pF
Settling time to
0.1%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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6
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
ELECTRICAL CHARACTERISTICS: VS = +5.0 V
At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the
specified temperature range. Guaranteed by design and/or characterization.
Parameter
Symbol
Conditions
Min
Typ
PSRR
NCx2003, A
72
80
Max
Unit
POWER SUPPLY
Power Supply Rejection Ratio
dB
65
NCx20032, NCx20034
Quiescent Current
IDD
No load, per channel
80
100
NCx2003, A
300
NCx20032,
NCx20034
325
660
mA
1000
450
675
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9. Guaranteed by design and/or characterization.
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7
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
600
700
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
600
+85°C
500
+125°C
400
+25°C
300
−40°C
200
100
500
400
300
VS = 1.8 V
200
100
No Load
No Load
0
1
3
2
4
0
−50
5
−25
0
SUPPLY VOLTAGE (V)
75
100
125
Figure 3. Quiescent Supply Current vs.
Temperature
1.8
20
VS = 5 V
18
LOW LEVEL OUTPUT VOLTAGE (V)
INPUT OFFSET CURRENT (pA)
50
25
TEMPERATURE (°C)
Figure 2. Quiescent Supply Current vs. Supply
Voltage
16
14
12
10
8
−40°C
+85°C
+25°C
6
+125°C
4
2
0
1.6
1.4
1.2
+125°C
1
0.8
+85°C
0.6
−40°C
0.4
+25°C
0.2
VS = 1.8 V
0
0
1
2
3
4
5
0
VCM, COMMON MODE VOLTAGE (V)
5
10
15
20
LOW LEVEL OUTPUT CURRENT (mA)
Figure 4. Input Offset Current vs. VCM
Figure 5. Low Level Output Voltage vs. Output
Current @ VS = 1.8 V
0.5
1.8
VS = 5 V
HIGH LEVEL OUTPUT VOLTAGE (V)
LOW LEVEL OUTPUT VOLTAGE (V)
VS = 5 V
VS = 2.7 V
0.4
0.3
+125°C
+85°C
0.2
−40°C
0.1
+25°C
0
0
5
10
15
−40°C
1.6
1.4
1.2
+25°C
1
+85°C
0.8
0.6
0.4
+125°C
0.2
0
0
20
VS = 1.8 V
−2
−4
−6
−8
−10
LOW LEVEL OUTPUT CURRENT (mA)
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 6. Low Level Output Voltage vs. Output
Current @ VS = 5 V
Figure 7. High Level Output Voltage vs. Output
Current @ VS = 1.8 V
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
HIGH LEVEL OUTPUT VOLTAGE (V)
5
140
VS = 5 V
−40°C
4.9
100
PSRR (dB)
+25°C
4.8
+85°C
4.7
80
60
+125°C
40
4.6
20
−4
−8
−12
−16
VS = 1.8 V
VS = 5 V
0
10
−20
100
1k
10k
100k
HIGH LEVEL OUTPUT CURRENT (mA)
FREQUENCY (Hz)
Figure 8. High Level Output Voltage vs. Output
Current @ VS = 5 V
Figure 9. PSRR vs. Frequency
1M
100
RL = 10 kW
TA = 25°C
80
360
80
Gain − 10 kW
Gain − 2 kW
Phase − 10 kW
Phase − 2 kW
Gain
60
AVOL (dB)
60
40
240
40
180
Phase
20
100
1k
10k
AVOL (dB)
−20
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 11. Open Loop Gain and Phase vs.
Frequency @ VS = 1.8 V
Gain − 2 kW
Gain − 10 kW
Phase − 2 kW
Phase − 10 kW
Gain
300
120
VS = 5 V
CL = 5 pF
TA = 25°C
100
60
1k
10k
100k
1M
10M
VS = 1.8 V
RL = 10 kW
TA = 25°C
70
180
Phase
0
100M
80
360
240
20
0
−20
10
60
FREQUENCY (Hz)
60
40
1M
VS = 1.8 V
CL = 5 pF
TA = 25°C
Figure 10. CMRR vs. Frequency
100
80
100k
PHASE MARGIN (°)
0
10
120
0
VS = 1.8 V
VS = 5 V
PHASE (°)
20
300
PHASE (°)
4.5
0
100
CMRR (dB)
RL = 10 kW
TA = 25°C
120
60
50
40
30
20
10
0
0
100M
0
FREQUENCY (Hz)
50
100
150
200
CAPACITIVE LOAD (pF)
Figure 12. Open Loop Gain and Phase vs.
Frequency @ VS = 5 V
Figure 13. Phase Margin vs. Capacitive Load
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NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
120
VOLTAGE (mV)
100
Output
Input
120
100
80
60
40
60
40
20
0
0
1800
1600
1400
0
20
40
−20
−20
60
20
40
60
TIME (ms)
Figure 14. Inverting Small Signal Transient
Response
Figure 15. Non−Inverting Small Signal
Transient Response
1800
VS = 1.8 V
RL = 2 kW
TA = 25°C
Output
Input
1600
1400
VOLTAGE (mV)
1000
800
600
400
1000
800
600
400
200
0
0
0
20
40
−200
−20
60
Output
Input
VS = 1.8 V
RL = 2 kW
TA = 25°C
1200
200
−200
−20
0
20
40
60
TIME (ms)
TIME (ms)
Figure 16. Inverting Large Signal Transient
Response
Figure 17. Non−Inverting Large Signal
Transient Response
100
6
VS = 5 V
RL = 2 kW
TA = 25°C
Output
Input
10
4
RL = 2 kW
AV = +1
TA = 25°C
f = 1 kHz
1
THD+N (%)
VOLTAGE (V)
0
TIME (ms)
1200
5
Output
Input
VS = 1.8 V
RL = 2 kW
TA = 25°C
80
20
−20
−20
VOLTAGE (mV)
140
VS = 1.8 V
RL = 2 kW
TA = 25°C
VOLTAGE (mV)
140
3
2
1
0.1
VS = 1.8 V
0.01
0.001
0
VS = 5 V
−1
−20
0
20
40
0.0001
0.01
60
0.1
1
TIME (ms)
OUTPUT VOLTAGE (Vpp)
Figure 18. Non−Inverting Large Signal
Transient Response
Figure 19. THD+N vs. Output Voltage
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10
10
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
TYPICAL CHARACTERISTICS
140
1
THD+N (%)
0.1
VS = 1.8 V
0.01
VS = 5 V
0.001
0.0001
10
100
1k
10k
VS = 1.8 V
VIN = VS/2
100
TA = 25°C
80
60
40
20
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 20. THD+N vs. Frequency
Figure 21. Input Voltage Noise vs. Frequency
40
10
VS = 1.8 V
VIN = VS/2
1
35
0.1
0.01
0.001
30
25
20
15
10
0.0001
0.00001
10
5
TA = 25°C
0
100
1k
10k
100k
11
12
13
14
FREQUENCY (Hz)
FALLING EDGE SLEW RATE (V/ms)
Figure 22. Noise Density vs. Frequency
Figure 23. Falling Edge Slew Rate @ Vs = 5 V
45
CHANNEL SEPARATION (dB)
VS = 5 V
TA = 25°C
40
NUMBER OF PARTS
120
0
10
100k
NUMBER OF PARTS
CURRENT NOISE DENSITY (pA/√Hz)
VOLTAGE NOISE (nV/√Hz)
RL = 2 kW
AV = +1
TA = 25°C
f = 1 kHz
35
30
25
20
15
10
0
−10
−20
Vs = 1.8 V
Vs = 5 V
−30
−40
TA = 25°C
−50
−60
−70
−80
−90
−100
5
−110
−120
0
7
8
9
10
100
1K
10K
100K
RISING EDGE SLEW RATE (V/ms)
FREQUENCY (Hz)
Figure 24. Rising Edge Slew Rate @ Vs = 5 V
Figure 25. Channel Separation
www.onsemi.com
11
1M
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
NOTE 5
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
D 5X
0.20 C A B
0.10 T
M
2X
0.20 T
B
5
1
4
2
S
3
K
B
DETAIL Z
G
A
A
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
DETAIL Z
J
C
0.05
H
SIDE VIEW
C
SEATING
PLANE
END VIEW
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
D
−X−
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
A
L
4
1
2
E
−Y−
3
b
e
HE
c
5 PL
0.08 (0.003)
DIM
A
b
c
D
E
e
L
HE
M
X Y
MILLIMETERS
NOM
MAX
0.55
0.60
0.22
0.27
0.13
0.18
1.60
1.65
1.20
1.25
0.50 BSC
0.10
0.20
0.30
1.55
1.60
1.65
MIN
0.50
0.17
0.08
1.55
1.15
RECOMMENDED
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
INCHES
NOM
0.022
0.009
0.005
0.063
0.047
0.020 BSC
0.004
0.008
0.061
0.063
MIN
0.020
0.007
0.003
0.061
0.045
MAX
0.024
0.011
0.007
0.065
0.049
0.012
0.065
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
D
HE
PIN 1 ID
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
E
b 8 PL
0.08 (0.003)
−T−
DIM
A
A1
b
c
D
E
e
L
HE
e
M
T B
S
A
S
SEATING
PLANE
A
0.038 (0.0015)
A1
MILLIMETERS
NOM
MAX
−−
1.10
0.08
0.15
0.33
0.40
0.18
0.23
3.00
3.10
3.00
3.10
0.65 BSC
0.40
0.55
0.70
4.75
4.90
5.05
MIN
−−
0.05
0.25
0.13
2.90
2.90
L
c
RECOMMENDED
SOLDERING FOOTPRINT*
8X
8X
0.48
0.80
5.25
0.65
PITCH
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
INCHES
NOM
−−
0.003
0.013
0.007
0.118
0.118
0.026 BSC
0.016
0.021
0.187
0.193
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
0.028
0.199
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
S
J
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
8x
0.20 (0.008) T U
K REF
0.10 (0.004)
S
2X
L/2
8
B
−U−
1
PIN 1
IDENT
S
T U
S
5
L
0.20 (0.008) T U
M
J J1
4
V
ÇÇÇÇ
ÉÉÉÉ
ÉÉÉÉ
ÇÇÇÇ
ÉÉÉÉ
K1
K
A
−V−
SECTION N−N
−W−
C
0.076 (0.003)
D
−T− SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
S
DETAIL E
G
0.25 (0.010)
N
M
N
F
DETAIL E
www.onsemi.com
16
DIM
A
B
C
D
F
G
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
2.90
3.10
4.30
4.50
--1.10
0.05
0.15
0.50
0.70
0.65 BSC
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.114
0.122
0.169
0.177
--0.043
0.002
0.006
0.020
0.028
0.026 BSC
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
NCS2003/A, NCV2003, NCS20032, NCV20032, NCS20034, NCV20034
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
D
A
B
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
8
A3
E
H
L
1
0.25
M
DETAIL A
7
B
13X
M
DIM
A
A1
A3
b
D
E
e
H
h
L
M
b
0.25
M
C A
S
B
S
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
SOLDERING FOOTPRINT*
6.50
14X
1.18
1
1.27
PITCH
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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