MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. PIN CONNECTIONS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max XXX MG G SOT−23 CASE 318 STYLE 6 1 XXX M G Specific Device Code = Date Code* = Pb−Free Package Unit (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 20 Vdc Input Reverse Voltage VIN(rev) 7 Vdc Collector Current − Continuous MARKING DIAGRAM ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 2 1 Publication Order Number: DTC143X/D MMUN2217L, NSVMMUN2217L Table 1. ORDERING INFORMATION Part Marking Package Shipping† MMUN2217LT1G A8M SC−23 (Pb−Free) 3000 / Tape & Reel NSVMMUN2217LT1G A8M SC−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD, POWER DISSIPATION (mW) 300 250 (1) SOT−23; Minimum Pad 200 (1) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 246 400 2.0 3.2 mW THERMAL CHARACTERISTICS (SOT−23) (MMUN2217L) Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C PD mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. http://onsemi.com 2 MMUN2217L, NSVMMUN2217L Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.5 50 − − 50 − − 35 60 − − − 0.25 − 0.9 0.3 2.5 2.0 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) Collector *Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 20 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Input Resistor R1 3.3 4.7 6.1 Resistor Ratio R1/R2 0.38 0.47 0.56 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. http://onsemi.com 3 Vdc Vdc Vdc Vdc Vdc kW MMUN2217L, NSVMMUN2217L 1 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS MMUN2217L 25°C 0.1 150°C −55°C 0.01 0 10 20 30 100 −55°C 10 1 50 40 0 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC 100 3.2 2.8 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 2.4 2 1.6 1.2 0.8 0.4 0 10 20 30 40 50 −55°C 10 25°C 1 0.1 0.01 150°C VO = 5 V VR, REVERSE VOLTAGE (V) 2 3 Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 0 1 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 100 Figure 3. DC Current Gain 3.6 0 150°C 25°C 10 25°C −55°C 1 150°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 4 5 MMUN2217L, NSVMMUN2217L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 mm Ǔ ǒinches 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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