Schmitt-Trigger Inverter MC74VHC1G14 The MC74VHC1G14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G14 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G14 to be used to interface 5 V circuits to 3 V circuits. The MC74VHC1G14 can be used to enhance noise immunity or to square up slowly changing waveforms. • High Speed: t PD = 4.0 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 101; Equivalent Gates = 25 MARKING DIAGRAMS 5 4 1 2 VAd 3 SC–70/SC–88A/SOT–353 DF SUFFIX CASE 419A Pin 1 d = Date Code 5 Figure 1. Pinout (Top View) 4 VAd 1 2 3 SOT–23/TSOP–5/SC–59 DT SUFFIX CASE 483 Figure 2. Logic Symbol Pin 1 d = Date Code FUNCTION TABLE PIN ASSIGNMENT 1 2 3 4 5 NC IN A GND OUT Y V CC Inputs A L H Output Y H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. VH14–1/4 MC74VHC1G14 MAXIMUM RATINGS Symbol V CC V IN V OUT Parameter Value Unit – 0.5 to + 7.0 V – 0.5 to +7.0 V V CC=0 – 0.5 to +7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS Min 2.0 0.0 0.0 – 55 Max 5.5 5.5 V CC + 125 Unit V V V °C 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature VH14–2/4 MC74VHC1G14 DC ELECTRICAL CHARACTERISTICS V CC (V) T A = 25°C T A < 85°C –55°C<TA<125°C Min Typ Max Min Max Min Max Unit Positive Threshold Voltage 3.0 4.5 1.85 2.86 2.0 3.0 2.20 3.15 2.20 3.15 2.20 3.15 3.50 0.9 3.6 1.5 3.85 1.65 3.85 3.85 Negative Threshold 5.5 3.0 0.9 0.9 Voltage 4.5 5.5 1.35 1.65 2.3 2.9 2.46 3.05 1.35 1.65 1.35 1.65 VH Hysteresis Voltage 3.0 4.5 0.30 0.57 0.40 0.67 1.20 1.40 0.30 1.20 0.30 0.40 1.40 0.40 1.20 1.40 V IN < V T – Min 0.50 0.74 1.9 2.0 0.50 1.60 0.50 1.9 1.9 1.60 Minimum High–Level 5.5 2.0 1.60 V OH Output Voltage I OH = –50 µA 3.0 4.5 2.9 4.4 I OH = –4 mA I OH = –8 mA 3.0 4.5 2.58 3.94 Symbol V T+ V T– V OL Parameter Test Conditions Maximum Low–Level Output Voltage 3.0 4.5 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 V V V V IN > V T + MinL I OL = 50 µA 2.0 3.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 4.5 3.0 0.0 I OL = 4 mA 0.1 0.36 0.1 0.44 0.1 0.52 0.36 ±0.1 0.44 ±1.0 0.52 ±1.0 µA 2.0 20 40 µA I IN Maximum Input 4.5 I OL = 8 mA V IN = 5.5 V or GND 0 to5.5 I CC Leakage Current Maximum Quiescent V IN = V CC or GND 5.5 V Supply Current AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns T A = 25°C Symbol Parameter t PLH , Maximum t PHL C IN C PD Propagation Delay, Input A to Y Test Conditions V CC = 3.3± 0.3 V C L = 15 pF Typ 7.0 Max 12.8 Min 1.0 Max Min 15.0 1.0 Max Unit 17.0 ns C L = 50 pF 8.5 16.3 1.0 18.5 1.0 20.5 V CC = 5.0± 0.5 V C L = 15 pF C L = 50 pF 4.0 5.5 8.6 10.6 1.0 1.0 10.0 12.0 1.0 1.0 11.5 13.5 5 10 Maximum Input Capacitance Power Dissipation Capacitance (Note 6) Min T A < 85°C –55°C<TA<125°C 10 Typical @ 25°C, V CC = 5.0 V 7.0 10 pF pF 6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no– load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC . VH14–3/4 MC74VHC1G14 *Includes all probe and jig capacitance Figure 4. Switching Waveforms Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Temp Order Number Circuit Device Range Technology Indicator Function Identifier Package Suffix Tape & Reel Suffix MC74VHC1G02DFT1 MC 74 VHC1G 14 DF T1 MC74VHC1G02DFT2 MC 74 VHC1G 14 DF T2 MC74VHC1G02DTT1 MC 74 VHC1G 14 DT T1 Package Type (Name/SOT#/ Common Name) Tape and Reel Size SC–70/SC–88A/ SOT–353 SC–70/SC–88A/ SOT–353 SOT–23/TSOPS/ SC–59 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit VH14–4/4