CREE C2M0080170P Silicon carbide power mosfet c2m mosfet technology Datasheet

C2M0080170P
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
VDS
1700 V
ID @ 25˚C
40 A
RDS(on)
80 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
Package
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low On-resistance
High speed switching with low capacitances
Easy to parallel and simple to drive
Halogen Free, RoHS compliant
TAB
Drain
Benefits
•
•
•
•
•
Drain
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
1
D
2 3 4
S S G
Gate
(Pin 4)
Applications
•
•
•
•
Driver
Source
(Pin 3)
1500V Solar Inverters
Switch Mode Power Supplies
High voltage DC/DC Converters
Capacitor discharge
Power
Source
(Pin 2)
Part Number
Package
Marking
C2M0080170P
TO-247-4 Plus
C2M0080170P
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
Drain - Source Voltage
1700
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-10/+25
V
AC (f >1 Hz)
Note: 1
VGSop
Gate - Source Voltage
-5/+20
V
Static
Note: 2
VGS = 20 V, TC = 25˚C
Fig. 19
ID
ID(pulse)
PD
TJ , Tstg
TL
Continuous Drain Current
27
A
VGS = 20 V, TC = 100˚C
Pulsed Drain Current
80
A
Pulse width tP limited by Tjmax
Fig. 22
Power Dissipation
277
W
TC=25˚C, TJ = 150 ˚C
Fig. 20
-55 to
+150
˚C
260
˚C
Operating Junction and Storage Temperature
Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V
Note (2): MOSFET can also safely operate at 0/+20V
1
40
C2M0080170P Rev. A, 05-2018
1.6mm (0.063”) from case for 10s
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
1700
2.0
80
Drain-Source On-State Resistance
Input Capacitance
2250
Coss
Output Capacitance
105
Crss
Reverse Transfer Capacitance
4
Eoss
Coss Stored Energy
65
EON
Turn-On Switching Energy (SiC Diode FWD)
0.3
EOFF
Turn Off Switching Energy (SiC Diode FWD)
0.1
EON
Turn-On Switching Energy (Body Diode FWD)
1.1
EOFF
Turn Off Switching Energy (Body Diode FWD)
0.1
td(on)
Turn-On Delay Time
25
Rise Time
9
Turn-Off Delay Time
34
Fall Time
18
Internal Gate Resistance
2
Qgs
Gate to Source Charge
28
Qgd
Gate to Drain Charge
33
Qg
Total Gate Charge
120
tf
RG(int)
VDS = VGS, ID = 10 mA
V
VDS = VGS, ID = 10 mA, TJ = 150ºC
100
μA
VDS = 1700 V, VGS = 0 V
250
nA
VGS = 20 V, VDS = 0 V
125
9.73
Ciss
td(off)
V
4
150
Transconductance
Test Conditions
VGS = 0 V, ID = 100 μA
2.0
1
Unit
V
2.6
gfs
tr
Max.
mΩ
S
10.07
VGS = 20 V, ID = 28 A
VGS = 20 V, ID = 28 A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 150ºC
VGS = 0 V
pF
VDS = 1000 V
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
f = 1 MHz
μJ
VAC = 25 mV
Fig. 16
mJ
VDS = 1200 V, VGS = -5/20 V, ID = 20A,
RG(ext) = 2.5Ω, L= 200 μH, TJ = 150ºC,
Using SiC Diode as FWD
Fig. 26,
29b
mJ
VDS = 1200 V, VGS = -5/20 V, ID = 20A,
RG(ext) = 2.5Ω, L= 200 μH, TJ = 150ºC,
Using MOSFET as FWD
Fig. 26,
29a
ns
VDD = 1200 V, VGS = -5/20 V
ID = 20 A, RG(ext) = 2.5 Ω,
Timing relative to VDS
Inductive load
Fig. 27
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 1200 V, VGS = -5/20 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Reverse Diode Characteristics
Symbol
VSD
Parameter
Typ.
Diode Forward Voltage
Max.
4.1
3.6
28
Unit
Test Conditions
Note
V
VGS = - 5 V, ISD = 10 A
V
VGS = - 5 V, ISD = 10 A, TJ = 150 °C
A
TC = 25˚C, VGS = - 5 V
Note 1
VGS = - 5 V, ISD = 20 A, VR = 1200 V
dif/dt = 2600 A/µs, TJ = 150 °C
Note 1
IS
Continuous Diode Forward Current
trr
Reverse Recover time
36
ns
Qrr
Reverse Recovery Charge
1
µC
Irrm
Peak Reverse Recovery Current
38
A
Fig. 8,
9, 10
Thermal Characteristics
Parameter
Typ.
Max.
RθJC
Thermal Resistance from Junction to Case
0.37
0.45
RθJA
Thermal Resistance From Junction to Ambient
Symbol
2
C2M0080170P Rev. A, 05-2018
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Typical Performance
100
100
Conditions:
TJ = -55 °C
tp = < 200 µs
VGS = 18V
VGS = 20V
VGS = 16V
VGS = 20V VGS = 18V
VGS = 12V
60
40
VGS = 10V
20
0
VGS = 12V
60
VGS = 10V
40
20
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
3.0
Conditions:
TJ = 150 °C
tp = < 200 µs
Drain-Source Current, IDS (A)
80
10.0
12.5
15.0
17.5
20.0
Figure 2. Output Characteristics TJ = 25 ºC
VGS = 14V
VGS = 12V
VGS = 10V
60
Conditions:
IDS = 28 A
VGS = 20 V
tp < 200 µs
2.5
VGS = 16V
VGS = 18V
VGS = 20V
40
20
On Resistance, RDS On (P.U.)
100
7.5
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
2.0
1.5
1.0
0.5
0.0
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
-50
20.0
-25
0
Figure 3. Output Characteristics TJ = 150 ºC
320
200
160
On Resistance, RDS On (mOhms)
240
200
TJ = 150 °C
120
TJ = 25 °C
80
TJ = -55 °C
40
75
100
125
150
Conditions:
IDS = 28 A
tp < 200 µs
180
160
50
Figure 4. Normalized On-Resistance vs. Temperature
Conditions:
VGS = 20 V
tp < 200 µs
280
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
On Resistance, RDS On (mOhms)
VGS = 14V
0
0.0
140
120
VGS = 12 V
100
VGS = 14 V
80
VGS = 16 V
60
VGS = 20 V
40
VGS = 18 V
20
0
0
0
10
20
30
40
50
60
70
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
VGS = 16V
80
Drain-Source Current, IDS (A)
80
Drain-Source Current, IDS (A)
Conditions:
TJ = 25 °C
tp = < 200 µs
VGS = 14V
C2M0080170P Rev. A, 05-2018
80
90
-50
-25
0
25
50
75
100
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
125
150
Typical Performance
100
-7
Conditions:
VDS = 20 V
tp < 200 µs
90
-4
-3
-2
-1
0
0
70
TJ = 25 °C
60
50
TJ = -55 °C
TJ = 150 °C
-10
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
-5
VGS = -5 V
80
40
-6
30
20
VGS = 0 V
-20
-30
-40
VGS = -2 V
-50
-60
-70
10
Conditions:
TJ = -55°C
tp < 200 µs
0
0
2
4
6
8
10
12
14
16
18
20
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-6
-5
-4
-3
-2
Figure 8. Body Diode Characteristic at -55 ºC
-1
0
-7
-6
-5
-4
-3
-2
-1
0
0
0
-10
VGS = 0 V
-20
-30
VGS = -2 V
-40
-50
-60
-10
VGS = -5 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = -5 V
VGS = 0 V
-20
-30
VGS = -2 V
-40
-50
-60
-70
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
-70
Conditions:
TJ = 150°C
tp < 200 µs
-80
-90
Drain-Source Voltage VDS (V)
3.0
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
1.5
1.0
0.5
0.0
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
C2M0080170P Rev. A, 05-2018
Conditions:
IDS = 20 A
IGS = 50 mA
VDS = 1200 V
TJ = 25 °C
20
2.0
-25
-90
25
Conditons
VGS = VDS
IDS = 5 mA
2.5
-80
Figure 10. Body Diode Characteristic at 150 ºC
Figure 9. Body Diode Characteristic at 25 ºC
-50
-90
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
-7
-80
150
15
10
5
0
-5
0
25
50
75
100
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
125
150
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
Drain-Source Current, IDS (A)
-20
VGS = 5 V
-30
VGS = 10 V
-40
VGS = 15 V
-50
VGS = 20 V
-60
-20
VGS = 5 V
-40
-4
-3
-2
-70
Conditions:
TJ = 25 °C
tp < 200 µs
-90
Drain-Source Voltage VDS (V)
-80
-90
Figure 14. 3rd Quadrant Characteristic at 25 ºC
70
0
-1
-60
VGS = 20 V
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-5
-50
VGS = 15 V
-80
Drain-Source Voltage VDS (V)
-6
-30
VGS = 10 V
-70
Conditions:
TJ = -55 °C
tp < 200 µs
-10
VGS = 0 V
Drain-Source Current, IDS (A)
-10
VGS = 0 V
0
0
-20
VGS = 5 V
-30
VGS = 10 V
VGS = 20 V
-40
VGS = 15 V
-50
-60
Conditions:
TJ = 150 °C
tp < 200 µs
Drain-Source Voltage VDS (V)
Stored Energy, EOSS (µJ)
Drain-Source Current, IDS (A)
60
-10
VGS = 0 V
50
40
30
20
-70
10
-80
0
0
-90
200
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Capacitance (pF)
Capacitance (pF)
1000
1200
Ciss
Coss
100
Crss
1000
Coss
100
10
1
Crss
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
800
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
10
600
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
10000
400
Drain to Source Voltage, VDS (V)
C2M0080170P Rev. A, 05-2018
200
0
100
200
300
400
500
600
Drain-Source Voltage, VDS (V)
700
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
800
900
Typical Performance
300
Conditions:
TJ ≤ 150 °C
40
Maximum Dissipated Power, Ptot (W)
Drain-Source Continous Current, IDS (DC) (A)
45
35
30
25
20
15
10
5
250
200
150
100
0
-55
-30
-5
20
45
70
95
120
Conditions:
TJ ≤ 150 °C
50
0
145
-55
Case Temperature, TC (°C)
-30
-5
20
45
70
95
120
145
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
10 µs
Limited by RDS On
0.5
100E-3
Drain-Source Current, IDS (A)
Junction To Case Impedance, ZthJC (oC/W)
1
0.3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
100 ms
1.00
0.10
Conditions:
TJ = 25 °C
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
1.2
ETotal
EOn
0.4
10
1000
0.2
ETotal
0.9
EOn
0.6
0.3
EOff
EOff
0.0
0.0
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 900V)
6
100
Figure 22. Safe Operating Area
Switching Loss (uJ)
Switching Loss (mJ)
0.6
1
Drain-Source Voltage, VDS (V)
1.5
Conditions:
TJ = 25 °C
VDD = 900 V
RG(ext) = 2.5 Ω
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
1
Figure 21. Transient Thermal Impedance
(Junction - Case)
0.8
1 ms
10.00
0.01
100E-6
100 µs
C2M0080170P Rev. A, 05-2018
50
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 1200V)
50
Typical Performance
1.5
Switching Loss (mJ)
1.5
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 20 A
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
1.2
Conditions:
IDS = 20 A
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5V/+20 V
FWD = C3M0080170P
(- - -)FWD = C3D10170H
L = 200 μH
1.2
ETotal
Switching Loss (mJ)
1.8
0.9
EOn
0.6
EOn
0.6
ETotal
EOn
0.3
EOff
0.3
0.9
ETotal
EOff
0.0
0.0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 20 A
VGS = -5V/+20 V
FWD = C2M0080170P
L = 200 μH
Switching Times (ns)
80
25
50
75
100
125
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
td(off)
60
td(on)
40
tf
20
tr
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
7
C2M0080170P Rev. A, 05-2018
150
Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100
0
Figure 28. Switching Times Definition
175
Test Circuit Schematic
Figure 29a. Clamped Inductive Switching Test Circuit using
MOSFET intristic body diode
Figure 29b. Clamped Inductive Switching Test Circuit using
SiC Schottky diode
8
C2M0080170P Rev. A, 05-2018
Package Dimensions
Package TO-247-4L
Plus
Semiconductor
ASE
Advanced
Engineering Weihai, Inc.
PACKAGE
OUTLINE
DWG NO.
98W0004TO005
ISSUE
A
DATE
May.20, 2016
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCE
2. DIMENSIONING & TOLERANCEING CONFI
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
E
MILLIMETERS
SYM
E1
E4
A
A1
A2
b'
b
b1
b2
b3
b4
b5
b6
c'
c
D
D1
D2
E
E1
E2
E3
E4
e
e1
N
L
L1
L2
Q
T
W
X
E2
E3
BASE METAL
SECTION "F-F", "G-G" AND "H-H"
SCALE: NONE
TITLE:
9
TO-247 Plus 4 LD
C2M0080170P Rev. A, 05-2018
COMPANY
ASE Weihai
SHEET
1 OF 3
TITLE:
MIN
MAX
4.83
5.21
2.29
2.54
1.91
2.16
1.07
1.28
1.07
1.33
2.39
2.94
2.39
2.84
1.07
1.60
1.07
1.50
2.39
2.69
2.39
2.64
0.55
0.65
0.55
0.68
23.30
23.60
16.25
17.65
0.95
1.25
15.75
16.13
13.10
14.15
3.68
5.10
1.00
1.90
12.38
13.43
2.54 BSC
5.08 BSC
4
17.31
17.82
3.97
4.37
2.35
2.65
5.49
6.00
17.5° REF.
3.5 ° REF.
4 ° REF.
TO-247 Plus 4LD
Notes
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree
representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh
Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not
limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency
medical equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support
Copyright © 2018 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C2M0080170P Rev. A, 05-2018
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
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