DMNH6042SSD 60V DUAL N-CHANNEL 175°C MOSFET Product Summary RDS(ON) Max ID Max TC = +25°C 50mΩ @ VGS = 10V 16.7A 65mΩ @ VGS = 4.5V 14.6A BVDSS ADVANCE INFORMATION Features and Benefits 60V Description and Applications This new generation MOSFET is designed to minimize the on-state resistance RDS(ON), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Engine Management Systems Body Control Electronics DC-DC Converters Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimizes Switching Losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH6042SSDQ) Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (Approximate) SO-8 D1 S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S2 S1 Top View Pin Configuration Top View D2 Equivalent Circuit Ordering Information (Note 4) Part Number DMNH6042SSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SO-8 8 5 = Manufacturer’s Marking H6042SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) H6042SD YY WW 1 DMNH6042SSD Document number: DS37631 Rev. 1 - 2 4 1 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCE INFORMATION Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +100°C Steady State Value 60 ±20 5.3 4.4 ID A 16.7 14 35 2.3 3.5 65 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 10mH Avalanche Energy (Note 7) L = 10mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 1.5 100 61 2.1 72 44 7.25 -55 to +175 PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 34 45 0.8 3.0 50 65 1.2 V Static Drain-Source On-Resistance 1.0 — — — mΩ VDS = VGS, ID = 250µA VGS = 10V, ID = 5.1A VGS = 4.5V, ID = 4.4A VGS = 0V, IS = 2.6A — — — — — — — — — — — — — 584 83 24 3.8 4.2 8.8 1.8 1.8 3.4 1.9 10.1 4.5 12.9 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns — 5.4 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 44V, ID = 5.2A VGS = 10V, VDS = 30V, RG = 6Ω, ID = 1A IF = 2.6A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMNH6042SSD Document number: DS37631 Rev. 1 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SSD 30.0 30 VGS = 8V VGS = 5V VDS = 5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.5V VGS = 10V 15.0 VGS = 4.0V 10.0 20 15 TJ = 175oC 10 TJ = 150oC 5.0 TJ = 125oC 5 VGS = 3.3V TJ = -55oC 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 0.06 VGS = 4.5V 0.055 0.05 0.045 0.04 0.035 0.03 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 25oC TJ = 85oC 0.0 VGS = 10V 0.025 0.02 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 6 0.1 0.09 0.08 ID = 5.1A 0.07 0.06 0.05 0.04 0.03 ID = 4.4A 0.02 0.01 2 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0.08 2.4 VGS = 10V TJ = 175oC 0.07 0.06 TJ = 125oC 0.05 TJ = 150oC TJ = 85oC 0.04 0.03 TJ = 25oC 0.02 TJ = -55oC 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25.0 2.2 VGS = 10V, ID = 5.1A 2 1.8 1.6 1.4 1.2 1 VGS = 4.5V, ID = 4.4A 0.8 0.6 0.4 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMNH6042SSD Document number: DS37631 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature July 2016 © Diodes Incorporated 2.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.1 0.09 0.08 VGS = 4.5V, ID = 4.4A 0.07 0.06 0.05 0.04 0.03 VGS = 10V, ID = 5.1A 0.02 2.6 2.4 ID = 1mA 2.2 2 1.8 ID = 250µA 1.6 1.4 1.2 0.01 1 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) -50 0 25 50 75 100 125 150 175 1000 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature Figure 7. On-Resistance Variation with Temperature 20 TA = 175oC 15 TA = 150oC TA = 125oC 10 TA = 85oC TA = 25oC 5 Ciss Coss 100 Crss TA = -55oC 10 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 10 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 RDS(ON) Limited PW = 1ms PW = 100µs 8 10 ID, DRAIN CURRENT (A) 6 VGS (V) ADVANCE INFORMATION DMNH6042SSD 4 VDS = 44V, ID = 5.2A 2 0 PW = 10s 0.1 0.01 0 2 4 6 8 10 Qg (nC) Figure 11. Gate Charge DMNH6042SSD Document number: DS37631 Rev. 1 - 2 DC 1 4 of 7 www.diodes.com PW = 1s TJ(Max) = 175℃ TC = 25℃ PW = 100ms Single Pulse DUT on 1*MRP Board PW = 10ms VGS = 10V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 July 2016 © Diodes Incorporated DMNH6042SSD 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 100℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMNH6042SSD Document number: DS37631 Rev. 1 - 2 5 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SSD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E 1 b All s 9° ( E1 h ) ides 7° A R .1 0 c SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm 4° ± 3° A1 e Q 45° ADVANCE INFORMATION SO-8 E0 L Gauge Plane Seating Plane D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMNH6042SSD Document number: DS37631 Rev. 1 - 2 X 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SSD IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMNH6042SSD Document number: DS37631 Rev. 1 - 2 7 of 7 www.diodes.com July 2016 © Diodes Incorporated