ON NTF5P03T3D Power mosfet Datasheet

NTF5P03T3
Preferred Device
Power MOSFET
5.2 Amps, 30 Volts
P–Channel SOT–223
Features
•
•
•
•
•
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Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT–223 Surface Mount Package
Avalanche Energy Specified
5.2 AMPERES
30 VOLTS
RDS(on) = 100 m
P–Channel
Applications
•
•
•
•
•
D
DC–DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
G
S
MARKING
DIAGRAM
4
1
2
SOT–223
CASE 318E
STYLE 3
AWW
5P03
3
A
WW
5P03
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4 Drain
1
Gate
2
3
Drain
Source
ORDERING INFORMATION
 Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 1
1
Device
Package
NTF5P03T3
SOT–223
Shipping
1000 Tape & Reel
Publication Order Number:
NTF5P03T3/D
NTF5P03T3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
–30
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
–30
V
VGS
± 20
V
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
RTHJA
PD
40
3.13
25
–5.2
–4.1
–26
°C/W
Watts
mW/°C
A
A
A
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1)
RTHJA
PD
IDM
80
1.56
12.5
–3.7
–2.9
–19
°C/W
Watts
mW/°C
A
A
A
TJ, Tstg
– 55 to 150
°C
Gate–to–Source Voltage – Continuous
1″ SQ.
FR–4 or G–10 PCB
10 seconds
Minimum
FR–4 or G–10 PCB
10 seconds
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = –30 Vdc, VGS = –10 Vdc, Peak IL = –12 Apk, L = 3.5 mH, RG = 25 )
1. Repetitive rating; pulse width limited by maximum junction temperature.
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2
ID
ID
IDM
ID
ID
EAS
mJ
250
NTF5P03T3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
–30
–
–
–28
–
–
–
–
–
–
–1.0
–25
–
–
± 100
–1.0
–
–1.75
3.5
–3.0
–
–
76
107
100
150
gfs
2.0
3.9
–
Mhos
Ciss
–
500
950
pF
Coss
–
153
440
Crss
–
58
140
td(on)
–
10
24
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = 0 Vdc, ID = –0.25 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = –24 Vdc, VGS = 0 Vdc)
(VDS = –24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
Vdc
Adc
IDSS
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
mV/°C
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
(VDS = VGS, ID = –0.25 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
(VGS = –10 Vdc, ID = –5.2 Adc)
(VGS = –4.5 Vdc, ID = –2.6Adc)
RDS(on)
Forward Transconductance (Note 2)
(VDS = –15 Vdc, ID = –2.0 Adc)
Vdc
mV/°C
m
DYNAMIC CHARACTERISTICS
(VDS = –25 Vdc, VGS = 0 V,
f=1
1.0
0 MH
MHz))
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
(VDD = –15 Vdc, ID = –4.0 Adc,
VGS = –10
10 Vdc,
Vd
RG = 6.0 ) (Note 2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = –15 Vdc, ID = –2.0 Adc,
VGS = –10
10 Vdc,
Vd
RG = 6.0 ) (Note 2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = –24 Vdc, ID = –4.0 Adc,
VGS = –10
10 Vdc)
Vd ) (Note
(N t 2)
tr
–
33
48
td(off)
–
38
94
tf
–
20
92
td(on)
–
16
38
tr
–
45
110
td(off)
–
23
60
tf
–
24
80
QT
–
15
38
Q1
–
1.6
–
Q2
–
3.5
–
Q3
–
2.6
–
–
–
–1.1
–0.89
–1.5
–
ns
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
(IS = –4.0 Adc, VGS = 0 Vdc)
(IS = –4.0 Adc, VGS = 0 Vdc,
TJ = 125°C) (Note 2)
VSD
(IS = –4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
A/s)) (Note
(N t 2)
trr
–
34
–
ta
–
20
–
tb
–
14
–
QRR
–
0.036
–
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit Typ
Cpk 3 SIGMA
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3
Vdc
ns
C
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
10
VGS = –4.3 V
VGS = –4.5 V
4
VGS = –6.0 V
VGS = –8.0 V
VGS = –4.1 V
3 V = –10 V
GS
VGS = –3.9 V
TJ = 25°C
VGS = –3.7 V
2
VGS = –3.5 V
VGS = –3.3 V
1
VGS = –3.1 V
0.3
0.9
0.6
1.2
VGS = –2.7 V
1.5
1.8
6
4
TJ = 25°C
2
TJ = 100°C
TJ = –55°C
3.5
4.5
5
5.5
6
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
ID = –4.0 A
TJ = 25°C
0.050
0.025
0
2
1
4
3
5
0.20
TJ = 25°C
0.15
VGS = –4.5 V
0.10
VGS = –10 V
0.05
0
0
2
1
3
4
5
7
6
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
8
100
VGS = 0 V
ID = –2.0 A
VGS = –10 V
–IDSS, LEAKAGE (nA)
1.4
1.2
1
0.8
0.6
–50
4
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.075
RDS(on), DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
8
3
0.100
0
VDS ≥ –10 V
0
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
0
0
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
–ID, DRAIN CURRENT (AMPS)
–ID, DRAIN CURRENT (AMPS)
5
TJ = 125°C
10
TJ = 100°C
1
–25
0
25
50
75
100
125
150
0
10
15
20
25
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Figure 5. On–Resistance Variation with
Temperature
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4
30
NTF5P03T3
TJ = 25°C
Ciss
5000
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
4000
Crss
3000
Ciss
2000
Coss
1000
Crss
0
10
–VGS 0 –VDS
10
20
30
12.5
7.5
15
–VGS
5.0
10
Q2
Q1
ID = –2 A
TJ = 25°C
2.5
0
0
10
20
30
40
50
5
0
60
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
3
–IS, SOURCE CURRENT (AMPS)
td(off)
t, TIME (ns)
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
VDD = –15 V
ID = –4.0 A
VGS = –10 V
tf
100
tr
td(on)
1
10
RG, GATE RESISTANCE ()
100
VGS = 0 V
TJ = 25°C
2
1
0
0.5
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
dc
1
10 ms
1 ms
0.1
0.01
0.1
100 s
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10 s
10
100
0.6
0.7
0.8
0.9
–VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage versus Current
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
–ID, DRAIN CURRENT (AMPS)
QT
10
1000
10
25
–VDS
–VDS, DRAIN–TO–SOURCE VOLTAGE (V)
6000
–VGS, GATE–TO–SOURCE VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS
350
ID = –6 A
300
250
200
150
100
50
0
25
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
RTHJA(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
1
D = 0.5
0.2
0.1
0.1
NORMALIZED TO RJA AT STEADY STATE (1″ PAD)
0.05
0.0175 CHIP
JUNCTION 0.0154 F
0.02
0.01
0.0710 0.2706 0.5779 0.7086 0.0854 F
0.3074 F
1.7891 F 107.55 F
AMBIENT
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 13. FET Thermal Response
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.091
2.3
0.248
6.3
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
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6
inches
mm
NTF5P03T3
TYPICAL SOLDER HEATING PROFILE
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 14 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 14. Typical Solder Heating Profile
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NTF5P03T3
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
D
L
G
J
C
0.08 (0003)
M
H
K
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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8
NTF5P03T3/D
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