Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB4D0N03BE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=10A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Symbol 30V 56A 13A 4.1 mΩ(typ) 5.5 mΩ(typ) Outline TO-220 MTB4D0N03BE3 G：Gate D：Drain S：Source G D S Ordering Information Device MTB4D0N03BE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB4D0N03BE3 CYStek Product Specification Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 2/ 8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy @ L=0.1mH, ID=40 Amps, VDD=15V VDS VGS IDM IAS 30 ±20 70 56 44 13.3 10.6 280 40 EAS 80 EAR 6 57 23 2.1 1.3 (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature ID IDSM PD PDSM Unit V A mJ W TL 300 TPKG 260 Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.2 60 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by condition of VDD=15V, ID=15A, L=0.5mH, VGS=10V. MTB4D0N03BE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS 30 1.5 - 29 19.7 4.1 5.5 2.5 ±100 1 5 5.4 7.8 V mV/°C V S nA - 32.3 17 5.2 8.4 13 16.6 44 11.6 1446 274 194 - - 0.83 15.5 8.5 56 280 1.2 - Test Conditions Static IDSS *RDS(ON) Dynamic *Qg (VGS=10V) *Qg (VGS=4.5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr μA mΩ VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=20A VGS=±20V VDS =24V, VGS =0V VDS =24V, VGS =0V, Tj=55°C VGS =10V, ID=20A VGS =4.5V, ID=10A nC VDS=15V, VGS=10V, ID=20A ns VDS=15V, ID=20A, VGS=10V, RGS=2.7Ω pF VGS=0V, VDS=15V, f=1MHz A V ns nC IS=20A, VGS=0V VGS=0V, IF=20A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB4D0N03BE3 CYStek Product Specification Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 4/ 8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 160 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current(A) 10V, 9V, 8V, 7V, 6V 120 VGS=5V 80 VGS=4V 40 VGS=3V VGS=3.5V 0 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0.4 0 1 2 3 4 VDS, Drain-Source Voltage(V) 5 -75 -50 -25 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 10 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V VGS=10V 1 Tj=25°C 0.8 0.6 Tj=125°C 0.4 0.2 1 0.01 0.1 1 10 ID, Drain Current(A) 0 100 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 80 70 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=20A 60 50 40 30 20 10 2.8 2.4 VGS=10V, ID=20A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C :4.1mΩ typ. 0 0 0 MTB4D0N03BE3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 5/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), NormalizedThreshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 100 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 8 6 4 VDS=15V 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 Total Gate Charge---Qg(nC) 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 90 1000 Silicon Limit 100 10 μs RDS(ON) Limited 100μs 1ms 10 10ms TC=25°C, Tj=150°C, VGS=10V, RθJC=2.2°C/W Single Pulse 1 100ms DC ID, Maximum Drain Current(A) 80 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 70 60 50 40 Package Limit 30 20 10 VGS=10V, RθJC=2.2°C/W 0 0.1 0.01 MTB4D0N03BE3 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 6/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 160 3000 VDS=10V 2500 TJ(MAX) =150°C TC=25°C RθJC=2.2°C/W 120 100 Power (W) ID, Drain Current (A) 140 80 60 2000 1500 1000 40 500 20 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 1E-05 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.2 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1.E-05 MTB4D0N03BE3 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB4D0N03BE3 CYStek Product Specification Spec. No. : C092E3 Issued Date : 2015.12.14 Revised Date : Page No. : 8/ 8 CYStech Electronics Corp. TO-220 Dimension Marking: B4D0 N03B Device Name Date Code □□□□ 1 3-Lead TO-220 Plastic Package CYStek Package Code: E3 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Millimeters Min. Max. 4.470 4.670 2.520 2.820 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.900 8.500 DIM A A1 b b1 c c1 D E Inches Min. Max. 0.176 0.184 0.099 0.111 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.406 0.394 0.350 0.335 DIM E1 e e1 F h L L1 Φ Millimeters Min. Max. 12.060 12.460 2.540* 4.980 5.180 2.890 2.590 0.000 0.300 13.400 13.800 3.560 3.960 3.735 3.935 Inches Min. Max. 0.475 0.491 0.100* 0.196 0.204 0.114 0.102 0.000 0.012 0.528 0.543 0.140 0.156 0.147 0.155 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB4D0N03BE3 CYStek Product Specification