ON NGB8206NT4 Ignition igbt 20 a, 350 v, n−channel d2pak Datasheet

NGB8206N
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 AMPS, 350 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
•
C
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Pb−Free Packages are Available
RG
G
RGE
E
MARKING DIAGRAM
Applications
4 Collector
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
390
V
Collector−Gate Voltage
VCER
390
V
Gate−Emitter Voltage
VGE
$15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
kV
8.0
500
V
PD
150
1.0
W
W/°C
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 6
1
GB
8206NG
AYWW
1
D2PAK
CASE 418B
STYLE 4
GB8206N
A
Y
WW
G
1
Gate
3
Emitter
2
Collector
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping †
D2PAK
50 Units / Rail
NGB8206NG
D2PAK
(Pb−Free)
50 Units / Rail
NGB8206NT4
D2PAK
800 / Tape & Reel
D2PAK
(Pb−Free)
800 / Tape & Reel
Device
NGB8206N
NGB8206NT4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NGB8206N/D
NGB8206N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
Value
EAS
Unit
mJ
250
200
180
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
62.5
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
325
350
375
V
IC = 10 mA
TJ = −40°C to 175°C
340
365
390
VCE = 15 V,
VGE = 0 V
TJ = 25°C
0.1
1.0
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
ICES
VCE = 175 V,
VGE = 0 V
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
Reverse Collector−Emitter Leakage Current
ICES(R)
VCE = −24 V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
TJ = 25°C
0.5
1.5
10
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.25
0.5
TJ = 175°C
1.0
12.5
25
TJ = −40°C
0.005
0.03
0.25
mA
V
mA
BVGES
IG = $5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = $5.0 V
TJ = −40°C to 175°C
200
300
350*
mA
Gate Resistor (Optional)
RG
TJ = −40°C to 175°C
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
70
16
25
kW
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
3.8
4.6
6.0
W
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient (Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
mV/°C
NGB8206N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.15
1.35
V
TJ = 175°C
0.70
0.95
1.15
TJ = −40°C
1.0
1.30
1.40
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.50
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
1.6
1.9
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
Forward Transconductance
gfs
TJ = 25°C
1.3
IC = 20 A,
VGE = 4.5 V
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0*
IC = 6.0 A,
VCE = 5.0 V
TJ = 25°C
10
18
25
Mhos
1100
1300
1500
pF
70
80
90
18
20
22
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz, VCE =
25 V
TJ = 25°C
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
td(off)
tf
td(off)
Fall Time (Inductive)
tf
Turn−On Delay Time
td(on)
Rise Time
tr
VCC = 300 V, IC =
9.0 A
RG = 1.0 kW, RL
= 33 W
VGE = 5 V
VCC = 300 V, IC =
9.0 A
RG = 1.0 kW, L =
300 mH
VGE = 5 V
VCC = 14 V, IC =
9.0 A
RG = 1.0 kW, RL
= 1.5 W
VGE = 5 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
mSec
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
400
30
TJ = 25°C
IA, AVALANCHE CURRENT (A)
SCIS ENERGY (mJ)
350
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
0
2
6
4
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
−25
INDUCTOR (mH)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
60
IC = 25 A
IC = 20 A
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
−25
0
25
50
75
100
150
125
50
100
125
150 175
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
175
4.5 V
5V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
50
4.5 V
4V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
75
VGE = 10 V
TJ, JUNCTION TEMPERATURE (°C)
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
0
50
Figure 2. Open Secondary Avalanche Current
vs. Temperature
2.0
1.5
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
1.75
0
2.5 V
0
1
2
3
4
5
6
7
VGE = 10 V
4V
50
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
0
8
4.5 V
2.5 V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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4
8
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
100000
VCE = 5 V
40
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
10000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
0
0
0.5
1
1.5
TJ = −40°C
2
2.5
3
3.5
10
VCE = 175 V
1.0
0.1
−50
−25
0
25
50
75
100
125
150 175
VGE, GATE TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
Mean + 4 s
2.00
1.75
Mean − 4 s
1.50
Ciss
1000
C, CAPACITANCE (pF)
1.25
1.00
0.75
0.50
Coss
100
Crss
10
1.0
0.25
0
−50
−25
0
25
50
75
100
125
150
0.1
175
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
12
10
10
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
0
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
GATE THRESHOLD VOLTAGE (V)
100
4
2.50
SWITCHING TIME (ms)
VCE = −24 V
1000
50
75
100
125
150
8
25
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/
Watt)
NGB8206N
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
t1
t2
0.01
0.01
0.000001
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
t,TIME (S)
Figure 13. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
0.1
1
NGB8206N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
4
1
2
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
S
3
V
W
W
H
M
T B
M
P
U
SOLDERING FOOTPRINT*
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
8.38
0.33
F
VIEW W−W
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8206N/D
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