NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 AMPS, 350 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • • C Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Pb−Free Packages are Available RG G RGE E MARKING DIAGRAM Applications 4 Collector • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 390 V Collector−Gate Voltage VCER 390 V Gate−Emitter Voltage VGE $15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range kV 8.0 500 V PD 150 1.0 W W/°C TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 6 1 GB 8206NG AYWW 1 D2PAK CASE 418B STYLE 4 GB8206N A Y WW G 1 Gate 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping † D2PAK 50 Units / Rail NGB8206NG D2PAK (Pb−Free) 50 Units / Rail NGB8206NT4 D2PAK 800 / Tape & Reel D2PAK (Pb−Free) 800 / Tape & Reel Device NGB8206N NGB8206NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NGB8206N/D NGB8206N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Value EAS Unit mJ 250 200 180 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 325 350 375 V IC = 10 mA TJ = −40°C to 175°C 340 365 390 VCE = 15 V, VGE = 0 V TJ = 25°C 0.1 1.0 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 175 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.25 0.5 TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 mA V mA BVGES IG = $5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = $5.0 V TJ = −40°C to 175°C 200 300 350* mA Gate Resistor (Optional) RG TJ = −40°C to 175°C Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 70 16 25 kW TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 3.8 4.6 6.0 W ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 mV/°C NGB8206N ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.70 0.95 1.15 TJ = −40°C 1.0 1.30 1.40 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.50 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* 1.6 1.9 ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V Forward Transconductance gfs TJ = 25°C 1.3 IC = 20 A, VGE = 4.5 V TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V TJ = 25°C SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) td(off) tf td(off) Fall Time (Inductive) tf Turn−On Delay Time td(on) Rise Time tr VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W VGE = 5 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH VGE = 5 V VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W VGE = 5 V *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 −25 INDUCTOR (mH) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 60 IC = 25 A IC = 20 A IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 50 75 100 150 125 50 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 75 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 50 Figure 2. Open Secondary Avalanche Current vs. Temperature 2.0 1.5 25 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching 1.75 0 2.5 V 0 1 2 3 4 5 6 7 VGE = 10 V 4V 50 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 0 8 4.5 V 2.5 V 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 8 NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS 100000 VCE = 5 V 40 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 10000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 0.5 1 1.5 TJ = −40°C 2 2.5 3 3.5 10 VCE = 175 V 1.0 0.1 −50 −25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 1.75 Mean − 4 s 1.50 Ciss 1000 C, CAPACITANCE (pF) 1.25 1.00 0.75 0.50 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 12 12 10 10 tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ms) GATE THRESHOLD VOLTAGE (V) 100 4 2.50 SWITCHING TIME (ms) VCE = −24 V 1000 50 75 100 125 150 8 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 5 RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/ Watt) NGB8206N 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 t1 t2 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 t,TIME (S) Figure 13. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 0.1 1 NGB8206N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− 4 1 2 −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V A S 3 V W W H M T B M P U SOLDERING FOOTPRINT* L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 8.38 0.33 F VIEW W−W 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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