DS1109SG DS1109SG Rectifier Diode Replaces January 2000 version, DS4169-3.0 DS4169-4.0 August 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 5000V ■ High Surge Capability IF(AV) 910A IFSM APPLICATIONS 11500A ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS1109SG50 5000 DS1109SG49 4900 DS1109SG48 4800 DS1109SG47 4700 DS1109SG46 4600 DS1109SG45 4500 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: G See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1109SG49 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS1109SG CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 910 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1430 A Continuous (direct) forward current - 1314 A 599 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 941 A Continuous (direct) forward current - 814 A Conditions Max. Units 710 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1115 A Continuous (direct) forward current - 1000 A 450 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 706 A Continuous (direct) forward current - 570 A IF Half wave resistive load 2/7 www.dynexsemi.com DS1109SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Conditions Max. Units 10ms half sine; Tcase = 150oC 9.2 kA VR = 50% VRRM - 1/4 sine 422 x 103 A2s 10ms half sine; Tcase = 150oC 11.5 kA VR = 0 660 x 103 A2s Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.032 o Anode dc - 0.064 o Cathode dc - 0.064 o C/W Double side - 0.008 o C/W Single side - 0.016 o C/W Forward (conducting) - 160 o Reverse (blocking) - 150 o Storage temperature range -55 175 o Clamping force 11.5 13.5 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 12.0kN with mounting compound C Virtual junction temperature C C kN 3/7 www.dynexsemi.com DS1109SG CHARACTERISTICS Symbol Conditions Parameter Min. Max. Units VFM Forward voltage At 1800A peak, Tcase = 25oC - 1.8 V IRM Peak reverse current At VRRM, Tcase = 150oC - 50 mA QS Total stored charge IF = 1000A, dIRR/dt = 3A/µs - 2600 µC Irr Reverse recovery current Tcase = 150˚C, VR = 100V - 80 A Threshold voltage At Tvj = 150˚C - 0.88 V Slope resistance At Tvj = 150˚C - 0.687 mΩ VTO rT CURVES 2500 2500 dc Measured under pulse conditions Half wave 2000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 2000 Tj = 150˚C 1500 1500 Tj = 25˚C 6 phase 1000 1000 500 500 0 0.5 3 phase 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 2.5 0 0 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 500 1000 1500 Mean forward current, IF(AV) - (A) 2000 Fig.3 Dissipation curves Where A = 0.788646 B = –0.0045 C = 0.000592 D = 0.006984 these values are valid for Tj = 125˚C for IF 500A to 2500A 4/7 www.dynexsemi.com DS1109SG 10000 1000 Conditions: Tj = 150˚C VR = 100V IF = 1000A Stored charge, QS - (µC) Reverse recovery current, Irr - (A) Conditions: Tj = 150˚C VR = 100V IF = 1000A 1000 100 IF QS dIF/dt IRM 100 0.1 1.0 10 Rate of decay of on-state current, dIF/dt - (A/µs) 10 0.1 100 Fig.4 Total stored charge 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) Fig.5 Maximum reverse recovery current 450 30 0.1 Anode side cooled 2 425 20 400 15 375 350 10 I2t value - (A2s x 103) Peak half sine forward current - (kA) 25 I2t 325 5 10 ms 1 2 3 5 10 20 300 50 Cycles at 50Hz Duration Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150˚C) Thermal Impedance - junction to case, Rth(j–c) - (˚C/W) I2t = Î2 x t 0 1 100 Double side cooled 0.01 0.001 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.01 0.1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 1.0 10 Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS1109SG PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS1109SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4169-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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