ISSI IS43R16160A-5T 16meg x 16 256-mbit ddr sdram Datasheet

ISSI
®
IS43R16160A
16Meg x 16
256-MBIT DDR SDRAM
PRELIMINARY INFORMATION
NOVEMBER 2005
FEATURES
DEVICE OVERVIEW
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•
ISSI’s 256-Mbit DDR SDRAM achieves high-speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 268,435,456-bit memory
array is internally organized as four banks of 64M-bit to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 16-bit data word size. Input data is registered on the I/O pins on both edges of Data Strobe
signal(s), while output data is referenced to both edges of
Data Strobe and both edges of CK. Commands are
registered on the positive edges of CK. Auto Refresh,
Active Power Down, and Pre-charge Power Down modes
are enabled by using clock enable (CKE) and other
inputs in an industry-standard sequence. All input and
output voltage levels are compatible with SSTL 2.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Clock Frequency: 200, 166 MHz
Power supply (VDD and VDDQ)
DDR 333: 2.5V + 0.2V
DDR 400: 2.6V + 0.1V
SSTL 2 interface
Four internal banks to hide row Pre-charge
and Active operations
Commands and addresses register on positive
clock edges (CK)
Bi-directional Data Strobe signal for data capture
Differential clock inputs (CK and CK) for
two data accesses per clock cycle
Data Mask feature for Writes supported
DLL aligns data I/O and Data Strobe transitions
with clock inputs
Half-strength and Full-strength drive strength
options
Programmable burst length for Read and Write
operations
Programmable CAS Latency (2, 2.5, or 3
clocks)
Programmable burst sequence: sequential or
interleaved
Burst concatenation and truncation supported
for maximum data throughput
Auto Pre-charge option for each Read or Write
burst
8192 refresh cycles every 64ms
KEY TIMING PARAMETERS
Parameter
-5
-6
Unit
DDR400
DDR333
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2.5
CAS Latency = 2
5
6
7.5
6
6
7.5
ns
ns
ns
Clock Frequency
CAS Latency = 3
CAS Latency = 2.5
CAS Latency = 2
200
166
133
166
166
133
MHz
MHz
MHz
Auto Refresh and Self Refresh Modes
Pre-charge Power Down and Active Power
Down Modes
Lead-free available
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
1
ISSI
IS43R16160A
®
PIN CONFIGURATIONS
66 pin TSOP - Type II for x16
VDD
1
66
VSS
DQ0
2
65
DQ15
VDDQ
3
64
VSSQ
DQ1
4
63
DQ14
DQ2
5
62
DQ13
VSSQ
6
61
VDDQ
DQ3
7
60
DQ12
DQ4
8
59
DQ11
VDDQ
9
58
VSSQ
DQ5
10
57
DQ10
DQ6
11
56
DQ9
VSSQ
12
55
VDDQ
DQ7
13
54
DQ8
NC
14
53
NC
VDDQ
15
52
VSSQ
LDQS
16
51
UDQS
NC
17
50
NC
VDD
18
49
VREF
NC
19
48
VSS
LDM
20
47
UDM
WE
21
46
CK
CAS
22
45
CK
RAS
23
44
CKE
CS
24
43
NC
NC
25
42
A12
BA0
26
41
A11
BA1
27
40
A9
A10
28
39
A8
A0
29
38
A7
A1
30
37
A6
A2
31
36
A5
A3
32
35
A4
VDD
33
34
VSS
PIN DESCRIPTIONS
2
A0-A12
Row Address Input
WE
Write Enable
A0-A8
Column Address Input
LDM, UDM
x16 Input Mask
BA0, BA1
Bank Select Address
LDQS, UDQS
Data Strobe
DQ0 to DQ15
Data I/O
VDD
Power
CK, CK
System Clock Input
Vss
Ground
CKE
Clock Enable
VDDQ
Power Supply for I/O Pin
CS
Chip Select
VssQ
Ground for I/O Pin
RAS
Row Address Strobe Command
VREF
Input Reference Voltage
CAS
Column Address Strobe Command
NC
No Connection
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
PIN FUNCTIONS
Symbol
A0-A12
Type
Input Pin
BA0, BA1
Input Pin
CAS
Input Pin
CKE
Input Pin
CK, CK
Input Pin
CS
Input Pin
LDM, UDM
Input Pin
LDQS, UDQS
Input/Output Pin
DQ0-DQ15
Input/Output Pin
NC
—
RAS
Input Pin
WE
Input Pin
VDDQ
VDD
VREF
VSSQ
VSS
Power
Power
Power
Power
Power
Supply
Supply
Supply
Supply
Supply
Pin
Pin
Pin
Pin
Pin
Function (In Detail)
Address inputs are sampled during several commands. During an Active
command, A0-A12 select a row to open. During a Read or Write command,
A0-A8 select a starting column for a burst. During a Pre-charge command, A10
determines whether all banks are to be pre-charged, or a single bank. During a
Load Mode Register command, the address inputs select an operating mode.
Bank Address inputs are used to select a bank during Active, Pre-charge,
Read, or Write commands. During a Load Mode Register command, BA0
and BA1 are used to select between the Base or Extended Mode Register
CAS is Column Access Strobe, which is an input to the device command
along with RAS and WE. See “Command Truth Table” for details.
Clock Enable: CKE High activates and CKE Low de-activates internal clock
signals and input/output buffers. When CKE goes Low, it can allow Self
Refresh, Pre-charge Power Down, and Active Power Down. CKE must be
High during entire Read and Write accesses. Input buffers except CK,
CK, and CKE are disabled during Power Down. CKE uses an SSTL 2
input, but will detect a LVCMOS Low level after VDD is applied.
All address and command inputs are sampled on the rising edge of the
clock input CK and the falling edge of the differential clock input CK.
Output data is referenced from the crossings of CK and CK.
The Chip Select input enables the Command Decoding block of the device.
When CS is disabled, a NOP occurs. See “Command Truth Table” for
details. Multiple DDR SDRAM devices can be managed with CS.
These are the Data Mask inputs. During a Write operation, the Data Mask
input allows masking of the data bus. DM is sampled on each edge of DQS.
There are two Data Mask input pins for the x16 DDR SDRAM. Each input
applies to DQ0-DQ7, or DQ8-DQ15.
These are the Data Strobe inputs. The Data Strobe is used for data capture.
During a Read operation, the DQS output signal from the device is edgealigned with valid data on the data bus. During a Write operation, the DQS
input should be issued to the DDR SDRAM device when the input values on
DQ inputs are stable. There are two Data Strobe pins for the x16 DDR
SDRAM. Each of the two Data Strobe pins applies to DQ0-DQ7, or DQ8-DQ15.
The pins DQ0 to DQ15 represent the data bus. For Write operations, the
data bus is sampled on Data Strobe. For Read operations, the data bus is
sampled on the crossings of CK and CK.
No Connect: This pin should be left floating. These pins could be used for
256Mbit or higher density DDR SDRAM.
RAS is Row Access Strobe, which is an input to the device command
along with CAS and WE. See “Command Truth Table” for details.
WE is Write Enable, which is an input to the device command along with
RAS and CAS. See “Command Truth Table” for details.
VDDQ is the output buffer power supply.
VDD is the device power supply.
VREF is the reference voltage for SSTL 2.
VSSQ is the output buffer ground.
VSS is the device ground.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
3
ISSI
IS43R16160A
®
Block Diagram
16M x 16
Row Addresses
Column Addresses
A0 - A8, AP, BA0, BA1
Row address
buffer
Column address
buffer
Refresh Counter
Row decoder
Row decoder
Memory array
Memory array
Memory array
Memory array
Bank 0
8192 x 256
x32 bit
Bank 1
8192 x 256
x 32 bit
Input buffer
Column decoder
Sense amplifier & I(O) bus
Row decoder
Column decoder
Sense amplifier & I(O) bus
Row decoder
Column decoder
Sense amplifier & I(O) bus
Column decoder
Sense amplifier & I(O) bus
Column address
counter
A0 - A12, BA0, BA1
Bank 2
8192 x 256
x 32 bit
Bank 3
8192 x 256
x 32 bit
Control logic & timing generator
Output buffer
DQS
Strobe
Gen.
DM
WE
CAS
RAS
Absolute Maximum Ratings*
TA = 0 to 70°C, VCC = 2.5V ± 0.2V, VCC = 2.6V ± 0.1V
for DDR400, f = 1 Mhz
Symbol Min Max Unit
BA0, BA1, CKE, CS, RAS, (CAS,
A0-A11, WE)
CINI
2
3.0
pF
Input Capacitance (CK, CK)
CIN2
2
3.0
pF
Data & DQS I/O Capacitance
COUT
4
5
pF
Input Capacitance (DM)
CIN3
4
5.0
pF
*Note: Capacitance is sampled and not 100% tested.
4
CS
Data Strobe
Capacitance*
Input Capacitance
CKE
DLL
CK
CK, CK
CK
DQ0-DQ15
Operating temperature range ..................0 to 70 °C
Storage temperature range ................-55 to 150 °C
VDDSupply Voltage Relative to VSS.....-1V to +3.6V
VDDQ Supply Voltage Relative to VSS
......................................................-1V to +3.6V
VREF and Inputs Voltage Relative to VSS
......................................................-1V to +3.6V
I/O Pins Voltage Relative to VSS
..........................................-0.5V to VDDQ+0.5V
Power dissipation .......................................... 1.6 W
Data out current (short circuit) ...................... 50 mA
*Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Functional Description
■ Power-Up Sequence
The following sequence is required for POWER UP.
1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)
- Apply VDD before or at the same time as VDDQ.
- Apply VDDQ before or at the same time as VTT & Vref.
2. Start clock and maintain stable condition for a minimum of 200us.
3. The minimum of 200us after stable power and clock (CLK, CLK), apply NOP & take CKE high.
4. Precharge all banks.
5. Issue EMRS to enable DLL.(To issue “DLL Enable” command, provide “Low” to A0, “High” to BA0
and “Low” to all of the rest address pins, A1~A11 and BA1)
6. Issue a mode register set command for “DLL reset”. The additional 200 cycles of clock input is
required to lock the DLL. (To issue DLL reset command, provide “High” to A8 and “Low” to BA0)
7. Issue precharge commands for all banks of the device.
8. Issue 2 or more auto-refresh commands.
9. Issue a mode register set command to initialize device operation.
Note1 Every “DLL enable” command resets DLL. Therefore sequence 6 can be skipped during power up. Instead of it,
the additional 200 cycles of clock input is required to lock the DLL after enabling DLL.
Power up Sequence & Auto Refresh(CBR)
0
CK, CK
1
2
4
5
6
7
8
9
10
••
••
11
12
13
14
••
tRFC
tRP
2 Clock min.
2 Clock min.
Command
3
precharge
ALL Banks
EMRS
MRS
DLL Reset
4
5
6
200 µS Power up
to 1st command
precharge
ALL Banks
1st Auto
Refresh
16
17
18
19
••
tRFC
••
••
15
2nd Auto
Refresh
••
••
2 Clock min.
Mode
Register Set
Any
Command
min. 200 Cycle
7
8
8
Extended Mode Register Set (EMRS)
The extended mode register stores the data for enabling or disabling DLL. The default value of the extended mode register is not defined, therefore the extended mode register must be written after power up for enabling or disabling DLL. The extended mode register is written by asserting low on CS, RAS, CAS, WE and
high on BA0 (The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into
the extended mode register). The state of address pins A0 ~ A12 and BA1 in the same cycle as CS, RAS,
CAS and WE low is written in the extended mode register. Two clock cycles are required to complete the
write operation in the extended mode register. The mode register contents can be changed using the same
command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used
for DLL enable or disable. “High” on BA0 is used for EMRS. All the other address pins except A0 and BA0
must be set to low for proper EMRS operation. A1 is used at EMRS to indicate I/O strength A1 = 0 full strength,
A1 = 1 half strength. Refer to the table for specific codes.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
5
ISSI
IS43R16160A
®
Mode Register Set (MRS)
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs
CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to
make DDR SDRAM useful for a variety of different applications. The default value of the mode register is not
defined, therefore the mode register must be written after EMRS setting for proper DDR SDRAM operation.
The mode register is written by asserting low on CS, RAS, CAS, WE and BA0 (The DDR SDRAM should be
in all bank precharge with CKE already high prior to writing into the mode register). The state of address pins
A0 ~ A12 in the same cycle as CS, RAS, CAS, WE and BA0 low is written in the mode register. Two clock
cycles are required to meet tMRD spec. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2, addressing mode
uses A3, CAS latency (read latency from column address) uses A4 ~ A6. A7 is a specific test mode
during production test. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Refer to
the table for specific codes for various burst length, addressing modes and CAS latencies.
1. MRS can be issued only at all banks precharge state.
2. Minimum tRP is required to issue MRS command.
BA1
BA 0
0
MRS
0
MRS
to
A 12
A3
A1
A0
0
I/O
DLL
RFU : Must be set "0"
RFU
DLL
TM
CAS Latency
BT
Burst Length
Address Bus
Extended Mode Register
Mode Register
A8
DLL Reset
A7
mode
A3
Burst Type
A1
0
No
0
Normal
0
Sequential
0
Full
0
Enable
Interleave
1
Half
1
Disable
1
1
Yes
1
Test
An ~ A0
I/O Strength
A6 A5
A4
Latency
A2
A1
A0
DLL Enable
Latency
0
(Existing)MRS Cycle
0
0
0
Reserve
Sequential
Interleave
1
Extended Funtions(EMRS)
0
0
1
Reserve
0
0
0
Reserve
Reserve
0
1
0
2
0
0
1
2
2
0
1
1
3
0
1
0
4
4
Reserve
0
1
1
8
8
0
0
Reserve
Reserve
* RFU(Reserved for future use)
should stay "0" during MRS
cycle.
A0
Burst Length
CAS Latency
BA 0
A2
1
0
0
1
0
1
Reserve
1
1
1
0
2.5
1
0
1
Reserve
Reserve
1
1
1
Reserve
1
1
0
Reserve
Reserve
1
1
1
Reserve
Reserve
Mode Register Set
0
1
2
3
4
5
6
7
8
CK, CK
tCK
6
*1
Mode
Register Set
Precharge
All Banks
Command
tRP *2
Any
Command
tMRD
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Mode Register Set Timing
T0
T1
T2
T3
T4
tCK
T5
T6
T7
T8
T9
tMRD
tRP
CK, CK
Pre- All
Command
ANY
MRS/EMRS
Mode Register set (MRS) or Extended Mode Register Set (EMRS) can be issued only when all banks are in the idle state.
If a MRS command is issued to reset the DLL, then an additional 200 clocks must occur prior to issuing any new command
to allow time for the DLL to lock onto the clock.
Burst Mode Operation
Burst Mode Operation is used to provide a constant flow of data to memory locations (Write cycle), or from
memory locations (Read cycle). Two parameters define how the burst mode will operate: burst sequence and
burst length. These parameters are programmable and are determined by address bits A0—A3 during the
Mode Register Set command. Burst type defines the sequence in which the burst data will be delivered or
stored to the SDRAM. Two types of burst sequence are supported: sequential and interleave. The burst
length controls the number of bits that will be output after a Read command, or the number of bits to be input
after a Write command. The burst length can be programmed to values of 2, 4, or 8. See the Burst Length
and Sequence table below for programming information.
Burst Length and Sequence
Burst Length
2
4
8
Starting Length (A2, A1, A0)
Sequential Mode
Interleave Mode
xx0
0, 1
0, 1
xx1
1, 0
1, 0
x00
0, 1, 2, 3
0, 1, 2, 3
x01
1, 2, 3, 0
1, 0, 3, 2
x10
2, 3, 0, 1
2, 3, 0, 1
x11
3, 0, 1, 2
3, 2, 1, 0
000
0,1, 2, 3, 4, 5, 6, 7
0,1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
7
ISSI
IS43R16160A
®
Bank Activate Command
The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising
edge of the clock. The DDR SDRAM has four independent banks, so two Bank Select addresses (BA0 and
BA1) are supported. The Bank Activate command must be applied before any Read or Write operation can
be executed. The delay from the Bank Activate command to the first Read or Write command must meet or
exceed the minimum RAS to CAS delay time (tRCD min). Once a bank has been activated, it must be precharged before another Bank Activate command can be applied to the same bank. The minimum time interval
between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay
time (tRRD min).
Bank Activation Timing
(CAS Latency = 2; Burst Length = Any)
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
Tn+4
Tn+5
tRC
tRP(min)
tRAS(min)
tRRD(min)
tRCD(min)
CK, CK
BA/Address
Bank/Row
Bank/Col
Bank
Bank/Row
Bank/Row
Command
Activate/A
Read/A
Pre/A
Activate/A
Activate/B
Begin Precharge Bank A
Read Operation
With the DLL enabled, all devices operating at the same frequency within a system are ensured to have
the same timing relationship between DQ and DQS relative to the CK input regardless of device density, process variation, or technology generation.
The data strobe signal (DQS) is driven off chip simultaneously with the output data (DQ) during each read
cycle. The same internal clock phase is used to drive both the output data and data strobe signal off chip to
minimize skew between data strobe and output data. This internal clock phase is nominally aligned to the
input differential clock (CK, CK) by the on-chip DLL. Therefore, when the DLL is enabled and the clock frequency is within the specified range for proper DLL operation, the data strobe (DQS), output data (DQ), and
the system clock (CK) are all nominally aligned.
Since the data strobe and output data are tightly coupled in the system, the data strobe signal may be delayed and used to latch the output data into the receiving device. The tolerance for skew between DQS and
DQ (tDQSQ) is tighter than that possible for CK to DQ (tAC) or DQS to CK (tDQSCK).
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Output Data (DQ) and Data Strobe (DQS) Timing Relative to the Clock (CK)
During Read Cycles
(CAS Latency = 2.5; Burst Length = 4)
T0
T1
T2
T3
T4
CK, CK
Command
READ
NOP
NOP
NOP
NOP
tDQSCK(max)
tDQSCK(min)
DQS
tAC(max)
tAC(min)
DQ
D0
D1
D2
D3
The minimum time during which the output data (DQ) is valid is critical for the receiving device (i.e., a memory controller device). This also applies to the data strobe during the read cycle since it is tightly coupled to
the output data. The minimum data output valid time (tDV) and minimum data strobe valid time (tDQSV) are derived from the minimum clock high/low time minus a margin for variation in data access and hold time due to
DLL jitter and power supply noise.
Read Preamble and Postamble Operation
Prior to a burst of read data and given that the controller is not currently in burst read mode, the data strobe
signal (DQS), must transition from Hi-Z to a valid logic low. The is referred to as the data strobe “read preamble” (tRPRE). This transition from Hi-Z to logic low nominally happens one clock cycle prior to the first edge of
valid data.
Once the burst of read data is concluded and given that no subsequent burst read operations are initiated,
the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data
strobe “read postamble” (tRPST). This transition happens nominally one-half clock period after the last edge of
valid data.
Consecutive or “gapless” burst read operations are possible from the same DDR SDRAM device with no
requirement for a data strobe “read” preamble or postamble in between the groups of burst data. The data
strobe read preamble is required before the DDR device drives the first output data off chip. Similarly, the
data strobe postamble is initiated when the device stops driving DQ data at the termination of read burst cycles.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
9
ISSI
IS43R16160A
®
Data Strobe Preamble and Postamble Timings for DDR Read Cycles
(CAS Latency = 2; Burst Length = 2)
T0
T1
T2
T3
T4
CK, CK
READ
Command
NOP
NOP
NOP
tRPRE(max)
tRPRE(min)
tRPST(min)
DQS
tRPST(max)
tDQSQ(min)
D0
DQ
D1
tDQSQ(max)
Consecutive Burst Read Operation and Effects on the Data Strobe Preamble and Postamble
Burst Read Operation (CAS Latency = 2; Burst Length = 4)
CK, CK
Command
ReadA
NOP
ReadB
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
D0A D1A D2A D3A D0B D1B D2B D3B
DQ
Burst Read Operation (CAS Latency = 2; Burst Length = 4)
CK, CK
Command
ReadA
NOP
NOP
ReadB
NOP
NOP
NOP
DQS
DQ
10
D0A D1A D2A D3A
D0B D1B D2B D3B
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Auto Precharge Operation
The Auto Precharge operation can be issued by having column address A10 high when a Read or Write
command is issued. If A10 is low when a Read or Write command is issued, then normal Read or Write burst
operation is executed and the bank remains active at the completion of the burst sequence. When the Auto
Precharge command is activated, the active bank automatically begins to precharge at the earliest possible
moment during the Read or Write cycle once tRAS(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation
N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency programmed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until
the minimum precharge time (tRP) has been satisfied.
Read with Autoprecharge Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
tRAS(min)
T7
T8
T9
tRP(min)
CK, CK
Command
ACT
NOP
R/w AP
NOP
NOP
NOP
NOP
BA
NOP
DQS
DQ
D0
D1
D2
D3
Begin Autoprecharge
Earliest Bank A reactivate
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
11
ISSI
IS43R16160A
®
Read with Autoprecharge Timing as a Function of CAS Latency
(CAS Latency = 2, 2.5 Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
tRAS(min)
T7
T8
T9
NOP
NOP
tRP(min)
CK, CK
Command
BA
NOP
NOP
RD AP
NOP
NOP
NOP
BA
DQS
DQ
D0
D1
D2
D3
CAS Latency=2
DQS
DQ
D0
D1
D2
D3
CAS Latency=2.5
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Precharge Timing During Read Operation
For the earliest possible Precharge command without interrupting a Read burst, the Precharge command
may be issued on the rising clock edge which is CAS latency (CL) clock cycles before the end of the Read
burst. A new Bank Activate (BA) command may be issued to the same bank after the RAS precharge time
(tRP). A Precharge command can not be issued until tRAS(min) is satisfied.
Read with Precharge Timing as a Function of CAS Latency
(CAS Latency = 2, 2.5; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
tRAS(min)
T7
T8
T9
NOP
NOP
tRP(min)
CK, CK
Command
BA
NOP
NOP
Read
NOP
PreA
NOP
BA
DQS
DQ
D0
D1
D2
D3
CAS Latency=2
DQS
DQ
D0
D1
D2
D3
CAS Latency=2.5
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
13
ISSI
IS43R16160A
®
Burst Stop Command
The Burst Stop command is valid only during burst read cycles and is initiated by having RAS and CAS
high with CS and WE low at the rising edge of the clock. When the Burst Stop command is issued during a
burst Read cycle, both the output data (DQ) and data strobe (DQS) go to a high impedance state after a delay
(LBST) equal to the CAS latency programmed into the device. If the Burst Stop command is issued during a
burst Write cycle, the command will be treated as a NOP command.
Read Terminated by Burst Stop Command Timing
(CAS Latency = 2, 2.5; Burst Length = 2)
T0
T1
T2
T3
T4
T5
T6
CK, CK
Command
Read
BST
NOP
NOP
NOP
NOP
LBST
DQS
CAS Latency = 2
D0
DQ
D1
LBST
DQS
CAS Latency = 2.5
DQ
14
D0
D1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Read Interrupted by a Precharge
A Burst Read operation can be interrupted by a precharge of the same bank. The Precharge command to
Output Disable latency is equivalent to the CAS latency.
Read Interrupted by a Precharge Timing
(CAS Latency = 2, 2.5; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
tRAS(min)
T7
T8
T9
NOP
NOP
tRP(min)
CK, CK
Command
BA
NOP
NOP
Read
NOP
PreA
NOP
BA
DQS
DQ
D0
D1
D2
D3
CAS Latency=2
DQS
DQ
D0
D1
D2
D3
CAS Latency=2.5
Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock. The address inputs determine the starting column address. The memory controller is required to provide an input data strobe (DQS) to the DDR SDRAM to strobe or latch the input data (DQ) and
data mask (DM) into the device. During Write cycles, the data strobe applied to the DDR SDRAM is required
to be nominally centered within the data (DQ) and data mask (DM) valid windows. The data strobe must be
driven high nominally one clock after the write command has been registered. Timing parameters tDQSS(min)
and tDQSS(max) define the allowable window when the data strobe must be driven high.
Input data for the first Burst Write cycle must be applied one clock cycle after the Write command is
registered into the device (WL=1). The input data valid window is nominally centered around the midpoint of
the data strobe signal. The data window is defined by DQ to DQS setup time (tQDQSS) and DQ to DQS hold
time (tQDQSH). All data inputs must be supplied on each rising and falling edge of the data strobe until the burst
length is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored.
Write Preamble and Postamble Operation
Prior to a burst of write data and given that the controller is not currently in burst write mode, the data strobe
signal (DQS), must transition from Hi-Z to a valid logic low. This is referred to as the data strobe “write preamble”.
This transition from Hi-Z to logic low nominally happens on the falling edge of the clock after the write command has been registered by the device. The preamble is explicitly defined by a setup time (tWPRES(min)) and
hold time (tWPREH(min)) referenced to the first falling edge of CK after the write command.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
15
ISSI
IS43R16160A
®
Burst Write Timing
(CAS Latency = Any; Burst Length = 4)
T0
T1
T2
T3
T4
CK, CK
WRITE
Command
NOP
NOP
NOP
tWPST
tWPRES
tDS
tDQSS
DQS(nom)
tDS
tDH
D0
DQ(nom)
D1
tDH
D2
D3
tWPRES(min)
DQS(min)
tDQSS(min)
D0
DQ(min)
D1
D2
D3
D0
D1
D2
tWPRES
DQS(max)
tDQSS(max)
DQ(max)
D3
Once
Once the
the burst
burst of
of write
write data
data is
is concluded
concluded and
and given
given that
that no
no subsequent
subsequent burst
burst write
write operations
operations are
are initiated,
initiated,
the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data
strobe “write postamble”. This transition happens nominally one-half clock period after the last data of the
burst cycle is latched into the device.
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Write Interrupted by a Precharge
A Burst Write can be interrupted before completion of the burst by a Precharge command, with the only
restriction being that the interval that separates the commands be at least one clock cycle.
Write Interrupted by a Precharge Timing
(CAS Latency = 2; Burst Length = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T12
T11
CK, CK
WriteA
Command
NOP
NOP
PreA
NOP
tWR
NOP
NOP
NOP
NOP
NOP
NOP
DQS
D0 D1 D2 D3 D4 D5 D6
DQ
DM
Data is masked
by DM input
Data is masked
by Precharge Command
DQS input ignored
Write with Auto Precharge
If A10 is high when a Write command is issued, the Write with auto Precharge function is performed. Any
new command to the same bank should not be issued until the internal precharge is completed. The internal
precharge begins after keeping tWR (min.).
Write with Auto Precharge Timing
(CAS Latency = Any; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
NOP
NOP
T10
tRAS(min)
CK, CK
Command
BA
NOP
NOP
WAP
NOP
NOP
NOP
NOP
BA
DQS
tWR(min)
DQ
D0
D1
D2
tRP(min)
D3
Begin Autoprecharge
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
17
ISSI
IS43R16160A
®
Precharge Timing During Write Operation
Precharge timing for Write operations in DRAMs requires enough time to satisfy the write recovery requirement. This is the time required by a DRAM sense amp to fully store the voltage level. For DDR SDRAMs, a
timing parameter (tWR) is used to indicate the required amount of time between the last valid write operation
and a Precharge command to the same bank.
The “write recovery” operation begins on the rising clock edge after the last DQS edge that is used to strobe
in the last valid write data. “Write recovery” is complete on the next 2nd rising clock edge that is used to strobe
in the Precharge command.
Write with Precharge Timing
(CAS Latency = Any; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
tRAS(min)
T9
T10
tRP(min)
CK, CK
Command
BA
NOP
NOP
Write
NOP
NOP
NOP
NOP
PreA
NOP
BA
tWR
DQS
D0
DQ
D1
D2
D3
tWR
DQS
DQ
18
D0
D1
D2
D3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Data Mask Function
The DDR SDRAM has a Data Mask function that is used in conjunction with the Write cycle, but not the
Read cycle. When the Data Mask is activated (DM high) during a Write operation, the Write is blocked (Mask
to Data Latency = 0).
When issued, the Data Mask must be referenced to both the rising and falling edges of Data Strobe.
Data Mask Timing
(CAS Latency = Any; Burst Length = 8)
T0
T1
T2
Write
NOP
T3
T4
T5
T6
T7
T8
T9
CK, CK
Command
NOP
NOP
NOP
NOP
tDS
NOP
NOP
tDS
DQS
tDH
D0
DQ
D1
D2
D3
tDH
D4
D5
D6
D7
DM
Burst Interruption
Read Interrupted by a Read
A Burst Read can be interrupted before completion of the burst by issuing a new Read command to any
bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length
starting with the new address. The data from the first Read command continues to appear on the outputs until
the CAS latency from the interrupting Read command is satisfied. At this point, the data from the interrupting
Read command appears on the bus. Read commands can be issued on each rising edge of the system clock.
It is illegal to interrupt a Read with autoprecharge command with a Read command.
Read Interrupted by a Read Command Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
ReadA
ReadB
T3
T4
T5
T6
T7
T8
T9
CK, CK
Command
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
DA0 DA1 DB0 DB1 DB2 DB3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
19
ISSI
IS43R16160A
®
Read Interrupted by a Write
To interrupt a Burst Read with a Write command, a Burst Stop command must be asserted to stop the burst
read operation and 3-state the DQ bus. Additionally, control of the DQS bus must be turned around to allow
the memory controller to drive the data strobe signal (DQS) into the DDR SDRAM for the write cycles. Once
the Burst Stop command has been issued, a Write command can not be issued until a minimum delay or
latency (LBST) has been satisfied. This latency is measured from the Burst Stop command and is equivalent
to the CAS latency programmed into the mode register. In instances where CAS latency is measured in half
clock cycles, the minimum delay (LBST) is rounded up to the next full clock cycle (i.e., if CL=2 then LBST=2, if
CL=2.5 then LBST=3). It is illegal to interrupt a Read with autoprecharge command with a Write command.
Read Interrupted by Burst Stop Command Followed by a Write Command Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
NOP
Write
NOP
NOP
NOP
NOP
T9
CK, CK
Read
Command
BST
DQS
D0
DQ
D0
D1
D1
D2
D3
LBST
Write Interrupted by a Write
A Burst Write can be interrupted before completion by a new Write command to any bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length starting with the new
address. The data from the first Write command continues to be input into the device until the Write Latency
of the interrupting Write command is satisfied (WL=1) At this point, the data from the interrupting Write command is input into the device. Write commands can be issued on each rising edge of the system clock. It is
illegal to interrupt a Write with autoprecharge command with a Write command.
Write Interrupted by a Write Command Timing
(CAS Latency = Any; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
WriteA
WriteB
NOP
NOP
NOP
NOP
NOP
NOP
T9
CK, CK
Command
DQS
DQ
DA0 DA1 DB0 DB1 DB2 DB3
DM
DM0 DM1 DM0 DM1 DM2 DM3
Write Latency
20
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Write Interrupted by a Read
A Burst Write can be interrupted by a Read command to any bank. If a burst write operation is interrupted
prior to the end of the burst operation, then the last two pieces of input data prior to the Read command must
be masked off with the data mask (DM) input pin to prevent invalid data from being written into the memory
array. Any data that is present on the DQ pins coincident with or following the Read command will be masked
off by the Read command and will not be written to the array. The memory controller must give up control of
both the DQ bus and the DQS bus at least one clock cycle before the read data appears on the outputs in
order to avoid contention. In order to avoid data contention within the device, a delay is required (tWTR) from
the last valid data input before a Read command can be issued to the device. It is illegal to interrupt a Write
with autoprecharge command with a Read command.
Write Interrupted by a Read Command Timing
(CAS Latency = 2; Burst Length = 8)
T0
T1
T2
T3
T4
T5
T6
Read
NOP
NOP
T7
T8
T9
NOP
NOP
T10
T11
T12
CK, CK
Write
Command
NOP
NOP
tWTR
NOP
NOP
NOP
DQS
D0 D1 D2 D3 D4 D5
DQ
D0 D 1 D 2 D3 D4 D 5 D 6 D7
DM
Data is masked
by DM input
Data is masked
by Read command
DQS input ignored
Auto Refresh
The Auto Refresh command is issued by having CS, RAS, and CAS held low with CKE and WE high at the
rising edge of the clock. All banks must be precharged and idle for a tRP(min) before the Auto Refresh command is applied. No control of the address pins is required once this cycle has started because of the internal
address counter. When the Auto Refresh cycle has completed, all banks will be in the idle state. A delay between the Auto Refresh command and the next Activate command or subsequent Auto Refresh command
must be greater than or equal to the tRFC(min). Commands may not be issued to the device once an Auto
Refresh cycle has begun. CS input must remain high during the refresh period or NOP commands must be
registered on each rising edge of the CK input until the refresh period is satisfied.
Auto Refresh Timing
T0
T1
T2
tRP
T3
T4
T5
T6
T7
tRFC
T8
T9
T10
T11
CK, CK
Pre All
Command
CKE
Auto Ref
NOP
NOP
ANY
High
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
NOP
21
ISSI
IS43R16160A
®
Self Refresh
A self refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising
edge of the clock (CK). Once the self refresh command is initiated, CKE must be held low to keep the device
in self refresh mode. During the self refresh operation, all inputs except CKE are ignored. The clock is internally disabled during self refresh operation to reduce power consumption. The self refresh is exited by supplying stable clock input before returning CKE high, asserting deselect or NOP command and then asserting
CKE high for longer than tSREX for locking of DLL. The auto refresh is required before self refresh entry and
after self refresh exit.
••
CK, CK
Command
••
Self
Refresh
••
Stable Clock
Auto
Refresh
••
NOP
••
••
CKE
••
tSREX
Power Down Mode
The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit are gated off to reduce power
consumption. All banks should be in idle state prior to entering the precharge power down mode and CKE
should be set high at least 1tck+tIS prior to row active command. During power down mode, refresh operations cannot be performed, therefore the device cannot remain in power down mode longer than the refresh
period (tREF) of the device.
CK, CK
Command
••
••
Precharge
Precharge
power
down
Entry
precharge
••
power
down
Exit
••
Active
NOP
Read
CKE
••
••
Active
power down
Entry
22
Active
power down
Exit
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
TRUTH TABLE 2 – CKE
(Notes: 1-4)
CKEn-1 CKEn
L
L
H
H
L
H
L
CURRENT STATE
COMMANDn
Power-Down
X
Maintain Power-Down
Self Refresh
X
Maintain Self Refresh
Power-Down
DESELECT or NOP
Exit Power-Down
Self Refresh
DESELECT or NOP
Exit Self Refresh
All Banks Idle
DESELECT or NOP
Precharge Power-Down Entry
Bank(s) Active
DESELECT or NOP
Active Power-Down Entry
All Banks Idle
AUTO REFRESH
H
ACTIONn
NOTES
5
Self Refresh Entry
See Truth Table 3
NOTE:
1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. DESELECT or NOP commands should be issued on any clock edges occurring during the tXSR period.
A minimum of 200 clock cycles is needed before applying a read command, for the DLL to lock.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
23
ISSI
IS43R16160A
®
DDR SDRAM SIMPLIFIED COMMAND TRUTH TABLE
A10/
AP
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
Mode Register Set
H
X
L
L
L
L
OP code
1,2
Extended Mode Register Set
H
X
L
L
L
L
OP code
1,2
H
X
H
X
X
X
L
H
H
H
X
1
H
X
L
L
H
H
H
X
L
H
L
H
CA
H
X
L
H
L
L
CA
H
X
L
L
H
L
X
Read Burst Stop
H
X
L
H
H
L
X
1
Auto Refresh
H
H
L
L
L
H
X
1
Entry
H
L
L
L
L
H
Exit
L
H
H
X
X
X
L
H
H
H
Entry
H
L
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
1
H
X
X
X
1
L
V
V
V
Device Deselect
No Operation
Bank Active
Read
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Self Refresh
Precharge Power
Down Mode
Active Power
Down Mode
Exit
L
H
Entry
H
L
Exit
L
H
X
ADDR
RA
BA
V
L
H
L
H
V
V
Note
1
1
1,3
1
1,4
H
X
1,5
L
V
1
1
X
1
1
X
X
1
1
1
1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Note :
1. LDM/UDM states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Prechagre command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time
(tWR) is needed to guarantee that the last data has been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be
precharged.
24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
TRUTH TABLE 3 – Current State Bank n - Command to Bank n
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE
Any
Idle
Row Active
Read (Auto Precharge
Disabled)
Write (Auto Precharge
Disabled)
/CS
/RAS
/CAS
/WE
COMMAND/ACTION
NOTES
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
L
L
H
H
ACTIVE (select and activate row)
L
L
L
H
AUTO REFRESH
7
L
L
L
L
MODE REGISTER SET
7
L
H
L
H
READ (select column and start READ burst)
10
L
H
L
L
WRITE (select column and start WRITE burst)
10
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
8
L
H
L
H
READ (select column and start new READ burst)
10
L
L
H
L
PRECHARGE (truncate READ burst, start PRECHARGE)
8
L
H
H
L
BURST TERMINATE
9
L
H
L
H
READ (select column and start READ burst)
L
H
L
L
WRITE (select column and start new WRITE burst)
L
L
H
L
PRECHARGE (truncate WRITE burst, start PRECHARGE)
10, 11
10
8, 11
NOTE:
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR
has been met (if the previous state was self refresh).
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown
are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met.
No data bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled,
and has not yet terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands,
or allowable commands to the other bank should be issued on any clock edge occurring during these states.
Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to
Truth Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when tRP is
met. Once tRP is met, the bank will be in the idle state.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
25
ISSI
IS43R16160A
®
NOTE: (continued)
Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is
met. Once tRCD is met, the bank will be in the “row active” state.
Read w/Auto-Precharge Enabled: Starts with registration of a READ command with AUTO PRECHARGE
enabled and ends when tRP has been met. Once tRP is met, the bank will
be in the idle state.
Write w/Auto-Precharge Enabled: Starts with registration of a WRITE command with AUTO PRECHARGE
enabled and ends when tRP has been met. Once tRP is met, the bank will
be in the idle state.
5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be
applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when
tRC is met. Once tRFC is met, the DDR SDRAM will be in the “all banks
idle” state.
Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends
when tMRD has been met. Once tMRD is met, the DDR SDRAM will be in
the “all banks idle” state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
tRP is met. Once tRP is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle and no bursts are in progress.
8. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank.
10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE
enabled and READs or WRITEs with AUTO PRECHARGE disabled.
11. Requires appropriate DM masking.
26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
TRUTH TABLE 4 – Current State Bank n - Command to Bank m
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE
Any
Idle
Row Activating,
Active, or Precharging
Read
(Auto-Precharge
Disabled)
Write
(Auto- Precharge
Disabled)
Read
(With Auto-Precharge)
Write
(With Auto-Precharge)
/CS
/RAS /CAS /WE
COMMAND/ACTION
NOTES
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
X
X
X
X
Any Command Otherwise Allowed to Bank m
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7
L
H
L
L
WRITE (select column and start WRITE burst)
7
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
L
H
L
L
WRITE (select column and start new WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
3a, 7
L
H
L
L
WRITE (select column and start new WRITE burst)
3a, 7
L
L
H
L
PRECHARGE
7
7, 8
7
3a, 7
3a, 7, 9
NOTE:
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met
(if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
27
ISSI
IS43R16160A
®
NOTE: (continued)
Read with Auto Precharge Enabled: See following text
Write with Auto Precharge Enabled: See following text
3a. The Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states can each be broken
into two parts: the access period and the precharge period. For Read with Auto Precharge, the precharge
period is defined as if the same burst was executed with Auto Precharge disabled and then followed with the
earliest possible PRECHARGE command that still accesses all of the data in the burst. For Write with Auto
Precharge, the precharge period begins when tWR ends, with tWR measured as if Auto Precharge was
disabled. The access period starts with registration of the command and ends where the precharge period
(or tRP) begins.
During the precharge period of the Read with Auto Precharge Enabled or Write with Auto Precharge Enabled
states, ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied; during the
access period, only ACTIVE and PRECHARGE commands to the other bank may be applied. In either case, all
other related limitations apply (e.g. contention between READ data and WRITE data must be avoided).
4. AUTO REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the
current state only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE
enabled and READs or WRITEs with AUTO PRECHARGE disabled.
8. Requires appropriate DM masking.
9. A WRITE command may be applied after the completion of data output.
28
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Simplified State Diagram
Power
Applied
Power
On
Precharge
PREALL
Self
Refresh
REFS
REFSX
MRS
EMRS
MRS
Auto
Refresh
REFA
Idle
CKEL
CKEH
Active
Power
Down
ACT
Precharge
Power
Down
CKEH
CKEL
Burst Stop
Row
Active
Write
Read
Write
Read
Write A
Write
Read A
Read
Read
Read A
Write A
Read
A
PRE
Write
A
PRE
PRE
Read
A
Precharge
PRE
PREALL
Automatic Sequence
Command Sequence
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
29
ISSI
IS43R16160A
®
DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Symbol
Min
Max
Supply voltage (for device with a nominal VDD of 2.5V)
VDD
2.3
2.7
Supply voltage (VDD of 2.6V for DDR400 device)
VDD
2.5
2.7
I/O Supply voltage
VDDQ
2.3
2.7
V
I/O Supply voltage for DDR400 device
VDDQ
2.5
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
VTT
VREF-0.04
VREF+0.04
V
2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.3
VDDQ+0.6
V
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current (VOUT = 1.95V)
IOH
-16.8
mA
Output Low Current (VOUT = 0.35V)
IOL
16.8
mA
I/O Termination voltage(system)
Input leakage current
Unit
Note
3
Notes: 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peakto-peak noise on VREF may not exceed 2% of the DC value
2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
30
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
IDD Max Specifications and Conditions
(0°C < TA < 70°C, VDDQ=2.5V+ 0.2V, VDD=2.5 +0.2V, for DDR400 device VDDQ=2.6V+ 0.1V, VDD=2.6 +0.1V)
Version
Conditions
Symbol
-5
-6
Unit
inputs changing twice per clock cycle; address and control inputs changing once per clock cycle
IDD0
120
110
mA
Operating current - One bank operation; One bank open, BL=4
IDD1
160
140
mA
Precharge power-down standby current; All banks idle; power - down mode; CKE = <VIL(max);
tCK= tCK (min); Vin = Vref for DQ,DQS and DM
IDD2P
30
25
mA
Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min);
tCK= tCK (min); Address and other control inputs changing once per clock cycle; Vin = Vref for DQ,
DQS and DM
IDD2F
52
45
mA
Precharge Quiet standby current; CS# > = VIH(min); All banks idle; CKE > = VIH(min);
tCK = tCK (min); Address and other control inputs stable with keeping >= VIH(min) or =< VIL (max);
Vin = Vref for DQ ,DQS and DM
IDD2Q
50
44
mA
Active power - down standby current; one bank active; power-down mode; CKE=< VIL (max);
tCK = tCK (min); Vin = Vref for DQ,DQS and DM
IDD3P
30
25
mA
IDD3N
90
80
mA
IDD4R
270
230
mA
IDD4W
250
210
mA
Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A
& DDR266B at 133Mhz, 12*tCK for DDR333B; distributed refresh
IDD5
210
200
mA
Self refresh current; CKE =< 0.2V; External clock should be on; tCK= tCK(min);
IDD6
3
3
mA
Operating current - Four bank operation; Four bank interleaving with BL=4
IDD7
400
350
mA
Operating current - One bank Active-Precharge; tRC=tRCmin;tCK= tCK (min); DQ, DM and DQS
Active standby current; CS# >= VIH(min); CKE>=VIH(min); one bank active; active - precharge;
tRC=tRASmax; tCK = tCK (min); DQ, DQS and DM inputs changing twice per clock cycle; address
and other control inputs changing once per clock cycle
Operating current - burst read; Burst length = 2; reads; continuous burst; One bank active; address
and control inputs changing once per clock cycle; CL=2 at tCK= tCK(min);
50% of data changing at every burst; lout = 0 m A
Operating current - burst write; Burst length = 2; writes; continuous burst; One bank active address
and control inputs changing once per clock cycle; CL=2 at tCK= tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle, 50% of input data changing at every burst
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
31
ISSI
IS43R16160A
®
AC Operating Conditions & Timing Specification
AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
1
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
2
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
VDDQ+0.6
V
3
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
4
Note:
1.Vih(max) = 4.2V. The overshoot voltage duration is < 3ns at VDD.
2. Vil(min) = -1.5V. The undershoot voltage duration is < 3ns at VSS.
3. VID is the magnitude of the difference between the input level on CK and the input on CK.
4. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
ELECTRICAL CHARACTERISTICS AND AC TIMING for PC400/PC333/PC266 -Absolute Specifications
(Notes: 1-5, 14-17) (0°C < T A < 70°C; VDDQ = +2.5V ±0.2V, VDD=+2.5V ±0.2V for DDR400 device VDDQ = +2.6V ±0.1V,
VDD=+2.6V ±0.1V)
AC CHARACTERISTICS
-5
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNITS
-0.65
0.65
-0.7
0.7
ns
Access window of DQs from CK/CK
t
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
t
CL
0.45
0.55
0.45
0.55
t
CK (3)
5
10
6
6
10
7.5
10
Clock cycle time
AC
t
CL = 3
CL = 2.5
tCK
(2.5)
t
CL = 2
CK (2)
NOTES
30
CK
30
12
ns
52
6
12
ns
52
7.5
12
ns
52
ns
26,31
DQ and DM input hold time relative to
DQS
t
DH
0.40
0.45
DQ and DM input setup time relative to
DQS
t
0.40
0.45
ns
26,31
1.75
1.75
ns
31
DS
DQ and DM input pulse width (for each in- t
DIPW
put)
Access window of DQS from CK/CK
t
DQSCK
DQS input high pulse width
t
DQS input low pulse width
tDQSL
DQS-DQ skew, DQS to last DQ valid,
per group, per access
t
DQSH
-0.6
DQS falling edge to CK rising - setup time
t
DQS falling edge from CK rising - hold
time
t
0.6
0.35
0.35
DQSQ
Write command to first DQS latching tran- t
DQSS
sition
32
-6
-0.6
1.25
ns
0.35
t
0.35
tCK
0.40
0.72
0.6
0.45
0.75
1.25
CK
ns
t
CK
DSS
0.2
0.2
t
CK
DSH
0.2
0.2
t
CK
25,26
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
AC CHARACTERISTICS
-5
SYMBOL
PARAMETER
t
-6
MAX
MIN
t
NOTES
ns
34
Data-out high-impedance window from
CK/CK
tHZ
-0.65
+0.65
-0.7
+0.7
ns
18
Data-out low-impedance window from
CK/CK
t
LZ
-0.65
+0.65
-0.7
+0.7
ns
18
Address and control input hold time
(fast slew rate)
t
IHF
0.60
0.75
ns
14
Address and control input setup time
(fast slew rate)
tIS
F
0.60
0.75
ns
14
Address and control input hold time
(slow slew rate)
t
IHS
0.70
0.80
ns
14
Address and control input setup time
(slow slew rate)
t
ISS
0.70
0.80
ns
14
tMRD
2
tQH
t
HP
-tQHS
DQ-DQS hold, DQS to first DQ to go nonvalid,
per access
t
HP
-tQHS
QHS
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ns
0.50
tRAS
40
t
RAP
15
t
ACTIVE to ACTIVE/AUTO REFRESH
command period
tCK
2
t
Data hold skew factor
CH,
t
CL
UNITS
t
HP
CH,
t
CL
MAX
Half clock period
LOAD MODE REGISTER command cycle time
RC
0.55
120,000
ns
35
18
ns
46
60
60
ns
70,000
42
tRFC
70
72
ns
ACTIVE to READ or WRITE delay
t
RCD
15
18
ns
t
15
18
RP
DQS read preamble
tRPRE
DQS read postamble
t
DQS write preamble
DQS write preamble setup time
DQS write postamble
Data valid output window
1.1
0.9
0.6
RRD
10
12
ns
tWPRE
0.25
0.25
tCK
WPRES
0.4
t
t
t
0.6
1.1
0.4
0
t
0
WPST
0.4
tWR
15
15
WTR
2
1
Write recovery time
Internal WRITE to READ command delay
0.9
t
na
Integrated Silicon Solution, Inc. — 1-800-379-4774
t
0.6
t
QH - DQSQ
0.4
t
50
ns
tCK
RPST
ACTIVE bank a to ACTIVE bank b command
25, 26
ns
AUTO REFRESH command period
PRECHARGE command period
Rev. 00B
11/28/05
MIN
®
0.6
t
42
CK
ns
20, 21
CK
19
ns
t
t
QH - DQSQ
CK
ns
25
33
ISSI
IS43R16160A
AC CHARACTERISTICS
PARAMETER
34
-5
SYMBOL
Average periodic refresh interval
t
Terminating voltage delay to VDD
tVTD
MIN
REFI
®
-6
MAX
MIN
7.8
MAX
7.8
UNITS NOTES
us
0
0
ns
Exit SELF REFRESH to non-READ com- t
XSNR
mand
75
75
ns
Exit SELF REFRESH to READ command tXSRD
200
200
tCK
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
SLEW RATE DERATING VALUES
(Notes: 14) 0°C TA +70°C; VDDQ= +2.5V ±0.2V, VDD = +2.5V ±0.2V for
DDR400 VDDQ= +2.6V ±0.1V, VDD = +2.6V ±0.1V
ADDRESS / COMMAND
SLEW RATE
∆ tIS
∆ tIH
0.500V / ns
0
0
ps
14
0.400V / ns
+50
+50
ps
14
0.300V / ns
+100
+100
ps
14
0.200V / ns
+150
+150
ps
14
UNITS
NOTES
SLEW RATE DERATING VALUES
(Note: 31) 0°C TA +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V for
DDR400 VDDQ= +2.6V ±0.1V, VDD = +2.6V ±0.1V
Data, DQS, DM
SLEW RATE
∆ tDS
∆ tDH
UNITS
NOTES
0.500V / ns
0
0
ps
31
0.400V / ns
+75
+75
ps
31
0.300V / ns
+150
+150
ps
31
0.200V / ns
+225
+225
ps
31
NOTES:
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the
full voltage range specified.
3. Outputs measured with equivalent load:
VTT
50 Ω
Output
(VOUT)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
Reference
Point
30pF
35
ISSI
IS43R16160A
®
NOTES: (continued)
4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input
timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications
are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate
for the input signals used to test the device is 1V/ns in the range between VIL(AC) and VIH(AC).
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will
effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long
as the signal does not ring back above [below] the DC input LOW [HIGH] level).
6. VREF is expected to equal VDDQ/2 of the transmit-ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±2 percent of the DC value.
Thus, from VDDQ/2, VREF is allowed ±25mV for DC error and an additional ±25mV for AC noise.
7. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected
to be set equal to VREF and must track variations in the DC level of VREF.
8. VID is the magnitude of the difference between the input level on CK and the input level on CK.
9. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the
DC level of the same.
10. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle
time at CL = 2 for -6 with the outputs open.
11. Enables on-chip refresh and address counters.
12. IDD specifications are tested after the device is properly initialized, and is averaged at the defined cycle rate.
13. This parameter is sampled. VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V, VREF = VSS, f = 100 MHz, T A = 25°C,
VOUT(DC) = VDDQ/2, VOUT (peak to peak) = 0.2V. DM input is grouped with I/O pins, reflecting the fact that they
are matched in loading.
14. Command/Address input slew rate = 0.5V/ns. For -5 and -6 with slew rates 1V/ns and faster, tIS and tIH are
reduced to 900ps. If the slew rate is less than 0.5V/ns, timing must be derated: tIS and tIH has an additional 50ps per
each 100mV/ns reduction in slew rate from the 500mV/ns. If the slew rate exceeds 4.5V/ns, functionality is uncertain.
15. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input
reference level for signals other than CK/CK is VREF.
16. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes,
CKE < 0.3 x VDDQ is recognized as LOW.
17. The output timing reference level, as measured at the timing reference point indicated in Note 3, is VTT.
18. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters
are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) or begins
driving (LZ).
19. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this
parameter, but system performance (bus turnaround) will degrade accordingly.
20. This is not a device limit. The device will operate with a negative value, but system performance could be
degraded due to bus turnaround.
21. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS
going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous
WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS.
22. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value
for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that
meets the maximum absolute value for tRAS.
36
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
IS43R16160A
ISSI
®
NOTES: (continued)
23. The refresh period 64ms. This equates to an average refresh rate of 7.8µs.
24. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any
given device.
25. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH
(tQH = tHP - tQHS). The data valid window derates directly proportional with the clock duty cycle and a practical data
valid window can be derived. The clock is allowed a maximum duty cycle variation of 45/55. Functionality is uncertain
when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55.
26. Referenced to each output group: x16 = LDQS with DQ0-DQ7; and UDQS with DQ8-DQ15.
27. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH during REFRESH command
period (tRFC [MIN]) else CKE is LOW (i.e., during standby).
28. To maintain a valid level, the transitioning edge of the input must:
a) Sustain a constant slew rate from the current AC level through to the target AC level, VIL(AC) or VIH(AC).
b) Reach at least the target AC level.
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC).
29. The Input capacitance per pin group will not differ by more than this maximum amount for any given device..
30. CK and CK input slew rate must be > 1V/ns.
31. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less
than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mv/ns reduction in slew rate.
If slew rate exceeds 4V/ns, functionality is uncertain.
32. VDD must not vary more than 4% if CKE is not active while any bank is active.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
37
ISSI
IS43R16160A
®
NOTES: (continued)
33. The clock is allowed up to ±150ps of jitter. Each timing parameter is allowed to vary by the same amount.
34. tHP min is the lesser of tCL minimum and tCH minimum actually applied to the device CK and CK/ inputs,
collectively during bank active.
35. READs and WRITEs with auto precharge are not allowed to be issued until tRAS(MIN) can be satisfied prior
to the internal precharge command being issued.
36. First DQS (LDQS or UDQS) to transition to last DQ (DQ0-DQ15) to transition valid.
Initial JEDEC specifications suggested this to be same as tDQSQ.
37. Normal Output Drive Curves:
a) The full variation in driver pull-down current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of Figure A.
b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but no
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure A.
c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figure B.
d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure B.
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be
between .71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 Volt, and at the same voltage
and temperature.
f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device
drain-to-source voltages from 0.1V to 1.0 Volt.
38. Reduced Output Drive Curves:
a) The full variation in driver pull-down current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve of Figure C.
b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure C.
c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figure D.
d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not
guaranteed, to lie within the inner bounding lines of the V-I curve of Figure D.
e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between
.71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 V, and at the same voltage.
f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device
drain-to-source voltages from 0.1V to 1.0 V.
39. The voltage levels used are derived from the referenced test load. In practice, the voltage levels obtained from
a properly terminated bus will provide significantly different voltage values.
40. VIH overshoot: VIH(MAX) = VDDQ+1.5V for a pulse width < 3ns and the pulse width can not be greater than 1/3
of the cycle rate. VIL undershoot: VIL(MIN) = -1.5V for a pulse width < 3ns and the pulse width can not be greater than
1/3 of the cycle rate.
41. VDD and VDDQ must track each other.
42. Note 42 is not used.
38
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
NOTES: (continued)
43. Note 43 is not used.
44. During initialization, VDDQ, VTT, and VREF must be equal to or less than VDD + 0.3V. Alternatively, VTT may
be 1.35V maximum during power up, even if VDD /VDDQ are 0 volts, provided a minimum of 42 ohms of series resistance is used between the VTT supply and the input pin.
45. Note 45 is not used.
46. tRAP > t RCD.
47. Note 47 is not used.
48. Random addressing changing 50% of data changing at every transfer.
49. Random addressing changing 100% of data changing at every transfer.
50. CKE must be active (high) during the entire time a refresh command is executed. That is, from the time the AUTO
REFRESH command is registered, CKE must be active at each rising clock edge, until tREF later.
51. IDD2N specifies the DQ, DQS, and DM to be driven to a valid high or low logic level. IDD2Q is similar to IDD2F
except IDD2Q specifies the address and control inputs to remain stable. Although IDD2F, IDD2N, and IDD2Q are
similar, IDD2F is “worst case.”
52. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed
by 200 clock cycles.
80
0
70
imum
-20
igh
Nominal h
-40
Nominal low
-60
Max
Minimum
60
Nominal low
50
40
Nom
30
20
h
xim
um
-120
0.5
1.0
1.5
2.0
2.5
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
hig
Ma
-100
10
0
0.0
inal
-80
Minimum
0.0
0.5
1.0
1.5
2.0
2.5
39
ISSI
IS43R16160A
®
IBIS: I/V Characteristics for Input and Output Buffers
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
Maximum
160
Iout(mA)
140
Typical High
120
100
80
60
Typical Low
40
Minimum
20
0
0.0
0.5
1.0
1.5
2.0
2.5
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
Minumum
Iout(mA)
0
-20
-40
Typical Low
-60
-80
-100
-120
-140
-160
Typical High
-180
-200
Maximum
-220
VDDQ
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
40
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical Low
Typical High
Minimum
Maximum
Typical Low
Typical High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
Table 17. Pull down and pull up current values
Temperature (Tambient)
Typical
25°C
Minimum
70°C
Maximum 0°C
Vdd/Vddq
Typical
Minimum
Maximum
DDR333/DDR266
2.5V
2.3V
2.7V
DDR400
2.6V
2.5V
2.7V
The above characteristics are specified under best, worst and normal process variation/conditions
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
41
ISSI
IS43R16160A
®
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
90
Maximum
80
70
Typical High
50
Iout(mA)
Iout(mA)
60
Typical Low
Minimum
40
30
20
10
0
0.0
1.0
2.0
Vout(V)
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
0.0
0.5
1.0
1.5
2.0
2.5
0
-10
Minumum
Typical Low
Iout(mA)
-20
-30
-40
-50
-60
Typical High
-70
Maximum
-80
-90
VDDQ
Vout(V)
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
42
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical Low
Typical High
Minimum
Maximum
Typical Low
Typical High
Minimum
Maximum
0.1
3.4
3.8
2.6
5.0
-3.5
-4.3
-2.6
-5.0
0.2
6.9
7.6
5.2
9.9
-6.9
-8.2
-5.2
-9.9
0.3
10.3
11.4
7.8
14.6
-10.3
-12.0
-7.8
-14.6
0.4
13.6
15.1
10.4
19.2
-13.6
-15.7
-10.4
-19.2
0.5
16.9
18.7
13.0
23.6
-16.9
-19.3
-13.0
-23.6
0.6
19.6
22.1
15.7
28.0
-19.4
-22.9
-15.7
-28.0
0.7
22.3
25.0
18.2
32.2
-21.5
-26.5
-18.2
-32.2
0.8
24.7
28.2
20.8
35.8
-23.3
-30.1
-20.4
-35.8
0.9
26.9
31.3
22.4
39.5
-24.8
-33.6
-21.6
-39.5
1.0
29.0
34.1
24.1
43.2
-26.0
-37.1
-21.9
-43.2
1.1
30.6
36.9
25.4
46.7
-27.1
-40.3
-22.1
-46.7
1.2
31.8
39.5
26.2
50.0
-27.8
-43.1
-22.2
-50.0
1.3
32.8
42.0
26.6
53.1
-28.3
-45.8
-22.3
-53.1
1.4
33.5
44.4
26.8
56.1
-28.6
-48.4
-22.4
-56.1
1.5
34.0
46.6
27.0
58.7
-28.7
-50.7
-22.6
-58.7
1.6
34.3
48.6
27.2
61.4
-28.9
-52.9
-22.7
-61.4
1.7
34.5
50.5
27.4
63.5
-28.9
-55.0
-22.7
-63.5
1.8
34.8
52.2
27.7
65.6
-29.0
-56.8
-22.8
-65.6
1.9
35.1
53.9
27.8
67.7
-29.2
-58.7
-22.9
-67.7
2.0
35.4
55.0
28.0
69.8
-29.2
-60.0
-22.9
-69.8
2.1
35.6
56.1
28.1
71.6
-29.3
-61.2
-23.0
-71.6
2.2
35.8
57.1
28.2
73.3
-29.5
-62.4
-23.0
-73.3
2.3
36.1
57.7
28.3
74.9
-29.5
-63.1
-23.1
-74.9
2.4
36.3
58.2
28.3
76.4
-29.6
-63.8
-23.2
-76.4
2.5
36.5
58.7
28.4
77.7
-29.7
-64.4
-23.2
-77.7
2.6
36.7
59.2
28.5
78.8
-29.8
-65.1
-23.3
-78.8
2.7
36.8
59.6
28.6
79.7
-29.9
-65.8
-23.3
-79.7
Table 18. Pull down and pull up current values
Temperature (Tambient)
Typical 25°C
Minimum 70°C
Maximum 0°C
Vdd/Vddq DDR333/DDR266
Typical 2.5V
Minimum 2.3V
Maximum 2.7V
DDR400
2.6V
2.5V
2.7V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
43
ISSI
IS43R16160A
®
The above characteristics are specified under best, worst and normal process variation/conditions
Figure 36 - DATA INPUT (WRITE) TIMING
tDSL
tDSH
DQS
tDS
DI
n
DQ
tDH
tDS
DM
tDH
DON'T CARE
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed
order following DI n
Figure 37 - DATA OUTPUT (READ) TIMING
tDQSQ
max
tDQSQ
max
t DQSQ
nom
DQS
DQ
tDQSQ
min
tDQSQ
min
1. tDQSQ max occurs when DQS is the earliest among DQS and DQ signals to transition.
2. tDQSQ min occurs when DQS is the latest among DQS and DQ signals to transition.
3. tDQSQ nom, shown for reference, occurs when DQS transitions in the center among DQ signal transitions.
DQS, DQ
tDV
Burst Length = 4 in the case shown
44
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 38 - INITIALIZE AND MODE REGISTER SETS
VDD
VDDQ
t VTD
VTT
(system*)
VREF
tCK
tCH
/CK
((
))
((
))
CK
CKE
LVCMOS LOW LEVEL
tCL
t IH
t IS
((
))
tIS
COMMAND
((
))
((
))
DM
((
))
((
))
A0-A9, A11
((
))
((
))
A10
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
tIH
NOP
PRE
EMRS
((
))
((
))
((
))
((
))
MRS
((
))
((
))
tIS
tIH
CODE
ALL BANKS
tIS
tIH
CODE
tIS
tIH
tIS
AR
((
))
((
))
AR
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
CODE
RA
((
))
((
))
((
))
((
))
((
))
((
))
CODE
RA
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
BA0=L,
BA1=L
BA
CODE
((
))
((
))
((
))
((
))
CODE
((
))
((
))
ALL BANKS
tIS
tIH
BA0, BA1
((
))
((
))
DQS
((
))
High-Z
((
))
((
))
((
))
((
))
((
))
((
))
High-Z
((
))
((
))
((
))
((
))
((
))
t MRD
t MRD
DQ
BA0=L,
BA1=L
ACT
((
))
((
))
tIH
BA0=H,
BA1=L
MRS
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
PRE
T = 200µs
Power-up:
VDD and
CLK stable
Extended
Mode
Register
Set
t RP
t RFC
t RFC
t MRD
200 cycles of CLK**
Load
Mode
Register,
Reset DLL
(with A8 = H)
Load
Mode
Register
(with A8 = L)
DON'T CARE
* = VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up.
** = tMRD is required before any command can be applied, and 200 cycles of CK are required before a READ command can be applied.
The two Auto Refresh commands may be moved to follow the first MRS, but precede the second PRECHARGE ALL command.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
45
ISSI
IS43R16160A
®
Figure 39 - POWER-DOWN MODE
tCK
tCH
/CK
CK
tIS tIH
tIS
CKE
tIS
COMMAND
tIS
ADDR
((
))
((
))
tIS
((
))
tIH
VALID*
tCL
NOP
tIH
((
))
((
))
NOP
((
))
((
))
VALID
DQS
((
))
((
))
DQ
((
))
((
))
DM
((
))
((
))
Enter
Power-Down
Mode
VALID
VALID
Exit
Power-Down
Mode
DON'T CARE
No column accesses are allowed to be in progress at the time Power-Down is entered
* = If this command is a PRECHARGE (or if the device is already in the idle state) then the Power-Down
mode shown is Precharge Power Down. If this command is an ACTIVE (or if at least one row is already
active) then the Power-Down mode shown is Active Power Down.
46
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 40 - AUTO REFRESH MODE
tCK
tCH
tCL
/CK
CK
tIS tIH
CKE
VALID
tIS
COMMAND
tIH
NOP
PRE
NOP
NOP
AR
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
VALID
((
))
((
))
NOP
((
))
((
))
NOP
AR
NOP
ACT
A0-A8
((
))
((
))
((
))
((
))
RA
A9, A11
((
))
((
))
((
))
((
))
RA
((
))
((
))
((
))
((
))
RA
((
))
((
))
((
))
((
))
BA
DQS
((
))
((
))
((
))
((
))
DQ
((
))
((
))
((
))
((
))
DM
((
))
((
))
((
))
((
))
ALL BANKS
A10
ONE BANK
tIS
BA0, BA1
tIH
*Bank(s)
t RP
t RC
t RC
DON'T CARE
* = "Don't Care", if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e. must precharge all active banks)
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
DM, DQ and DQS signals are all "Don't Care"/High-Z for operations shown
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
47
ISSI
IS43R16160A
®
Figure 41 - SELF REFRESH MODE
tCK
tCH
clock must be stable before
exiting Self Refresh mode
tCL
/CK
CK
tIS tIH
tIS
tIS
((
))
((
))
((
))
CKE
tIS
COMMAND
((
))
((
))
((
))
tIH
NOP
AR
((
))
((
))
NOP
((
))
((
))
ADDR
((
))
((
))
((
))
((
))
DQS
((
))
((
))
((
))
((
))
DQ
((
))
((
))
((
))
((
))
DM
((
))
((
))
((
))
((
))
tRP*
Enter
Self Refresh
Mode
VALID
tIS
tIH
VALID
tXSNR/
tXSRD**
Exit
Self Refresh
Mode
DON'T CARE
* = Device must be in the "All banks idle" state prior to entering Self Refresh mode
** = tXSNR is required before any non-READ command can be applied, and tXSRD (200 cycles of CLK)
are required before a READ command can be applied.
48
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 42 - READ - WITHOUT AUTO PRECHARGE
tCH
tCK
tCL
/CK
CK
tIS
tIH
tIS
tIH
tIH
CKE
COMMAND
NOP
Start!Autoprecharge
READ
tIS
A0-A7
NOP
PRE
NOP
NOP
ACT
VALID
VALID
NOP
NOP
NOP
tIH
Col n
RA
A8, A9, A11
RA
tIS
tIH
ALL BANKS
A10
RA
DIS AP
tIS
BA0, BA1
VALID
ONE BANK
tIH
Bank x
*Bank x
Bank x
tRP
CL = 2
DM
Case 1:
tAC/tDQSCK = min
t DQSCK
min
tRPST
tRPRE
DQS
DQ
tLZ
min
tHZ
min
DO
n
tLZ
min
tAC
min
Case 2:
tAC/tDQSCK = max
t DQSCK
max
tRPRE
tRPST
DQS
DQ
tLZ
max
tHZ
max
DO
n
tLZ
max
t AC
max
DON'T CARE
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
49
ISSI
IS43R16160A
®
Figure 43 - READ - WITH AUTO PRECHARGE
tCH
tCK
tCL
/CK
CK
tIS
tIH
tIS
tIH
tIH
CKE
COMMAND
NOP
READ
tIS
A0-A7
NOP
PRE
NOP
NOP
ACT
VALID
VALID
NOP
NOP
NOP
tIH
Col n
RA
A8, A9, A11
RA
tIS
tIH
ALL BANKS
A10
RA
DIS AP
tIS
BA0, BA1
VALID
ONE BANK
tIH
Bank x
*Bank x
Bank x
tRP
CL = 2
DM
Case 1:
tAC/tDQSCK = min
t DQSCK
min
tRPST
tRPRE
DQS
DQ
tLZ
min
tHZ
min
DO
n
tLZ
min
tAC
min
Case 2:
tAC/tDQSCK = max
t DQSCK
max
tRPRE
tRPST
DQS
DQ
tLZ
max
tHZ
max
DO
n
tLZ
max
t AC
max
DON'T CARE
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
50
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 44 - BANK READ ACCESS
tCK
tCH
tCL
/CK
CK
tIS tIH
CKE
tIS
COMMAND
tIH
NOP
ACT
tIS
NOP
NOP
NOP
A8, A9, A11
NOP
NOP
ACT
RA
RA
tIH
ALL BANKS
RA
RA
tIS
BA0, BA1
PRE
RA
tIS
A10
NOP
Col n
RA
A0-A7
READ
tIH
DIS AP
ONE BANK
Bank x
*Bank x
tIH
Bank x
Bank x
tRC
tRAS
CL = 2
tRCD
tRP
DM
Case 1:
tAC/tDQSCK = min
t DQSCK
min
tRPST
tRPRE
DQS
DQ
tLZ
min
tHZ
min
DO
n
tAC
min
tLZ
min
Case 2:
tAC/tDQSCK = max
t DQSCK
max
tRPRE
tRPST
DQS
DQ
tLZ
max
tHZ
max
DO
n
tLZ
max
t AC
max
DON'T CARE
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
51
ISSI
IS43R16160A
®
Figure 45 - WRITE - WITHOUT AUTO PRECHARGE
tCH
tCK
tCL
/CK
CK
tIS
tIH
tIS
tIH
tIH
CKE
COMMAND
VALID
NOP
WRITE
tIS
A0-A7
NOP
NOP
NOP
NOP
PRE
NOP
NOP
Col n
RA
RA
A8, A9, A11
tIS
tIH
ALL BANKS
A10
RA
DIS AP
tIS
BA0, BA1
ACT
tIH
ONE BANK
tIH
Bank x
*Bank x
BA
tRP
tDSH
tDSH
Case 1:
tDQSS = min
tDQSS
tWR
tDQSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
tDSS
Case 2:
tDQSS = max
tDQSS
tDQSH
tDSS
tWPST
DQS
tWPRES
tDQSL
tWPRE
DQ
DI
n
DM
DON'T CARE
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
52
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
Figure 46 - WRITE - WITH AUTO PRECHARGE
tCK
tCH
tCL
/CK
CK
tIS
tIH
tIS
tIH
CKE
COMMAND
NOP
WRITE
tIS
A0-A7
NOP
NOP
NOP
VALID
VALID
VALID
NOP
NOP
NOP
NOP
ACT
tIH
Col n
RA
A8, A9, A11
RA
EN AP
A10
RA
tIS
BA0, BA1
tIH
Bank x
BA
tDAL
tDSH
tDSH
Case 1:
tDQSS = min
tDQSS
tDQSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
tDSS
Case 2:
tDQSS = max
tDQSS
tDQSH
tDSS
tWPST
DQS
tWPRES
tDQSL
tWPRE
DQ
DI
n
DM
DON'T CARE
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n
EN AP = Enable Autoprecharge
ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
53
ISSI
IS43R16160A
®
Figure 47 - BANK WRITE ACCESS
tCH
tCK
tCL
/CK
CK
tIS tIH
CKE
tIS
COMMAND
tIH
NOP
ACT
tIS
A0-A7
NOP
WRITE
NOP
NOP
PRE
tIH
ALL BANKS
RA
tIS
BA0, BA1
NOP
RA
tIS
A10
NOP
Col n
RA
A8, A9, A11
NOP
tIH
DIS AP
ONE BANK
Bank x
*Bank x
tIH
Bank x
tRAS
tRCD
tWR
tDSH
tDSH
Case 1:
tDQSS = min
tDQSS
tDQSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
tDSS
Case 2:
tDQSS = max
tDQSS
tDQSH
tDSS
tWPST
DQS
tWPRES
tDQSL
tWPRE
DQ
DI
n
DM
DON'T CARE
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
54
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
®
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency
Speed (ns)
Order Part No.
Package
200 MHz
5
IS43R16160A-5T
66-pin TSOP-II
200 MHz
5
IS43R16160A-5TL
66-pin TSOP-II, Lead-free
166 MHz
6
IS43R16160A-6T
66-pin TSOP-II
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
55
ISSI
®
PACKAGING INFORMATION
Plastic TSOP 66-pin
Package Code: T (Type II)
N
N/2+1
E1
E
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing between
centers.
3. Dimensions D and E1 do not include
mold flash protrusions and should be
measured from the bottom of the
package.
4. Formed leads shall be planar with
respect to one another within 0.004
inches at the seating plane.
N/2
1
D
SEATING PLANE
A
ZD
b
e
L
A1
α
C
Plastic TSOP (T - Type II)
Millimeters
Inches
Symbol Min
Max
Min
Max
Ref. Std.
No. Leads (N)
66
A
A1
A2
b
C
D
E1
E
e
L
L1
ZD
α
—
1.20
0.05 0.15
—
—
0.24 0.40
0.12 0.21
22.02 22.42
10.03 10.29
11.56 11.96
0.65 BSC
0.40 0.60
—
—
0.71 REF
0°
8°
—
0.047
0.002 0.006
—
—
0.009 0.016
0.005 0.0083
0.867 0.8827
0.395 0.405
0.455 0.471
0.026 BSC
0.016 0.024
—
—
0.028 REF
0°
8°
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
08/09/05
1