TI ISO1176TDWR Isolated profibus rs-485 transceiver with integrated transformer driver Datasheet

ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
Isolated Profibus RS-485 Transceiver with Integrated Transformer Driver
Check for Samples: ISO1176T
FEATURES
APPLICATIONS
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2
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3000VRMS / 4242VPK Isolation
Meets or Exceeds the Requirements of EN
50170 and TIA/EIA RS-485
Signaling Rates up to 40 Mbps
Easy Isolated Power Design with Integrated
Transformer Driver
Typical Efficiency > 60% (ILOAD = 100 mA) - see
sluu471
Differential Output exceeds 2.1V (54Ω Load)
Low Bus Capacitance 10pF (MAX)
50kV/µs Typical Transient Immunity
UL 1577, IEC 60747-5-2 (VDE 0884, Rev. 2)
Approvals Pending
Fail-safe Receiver for Bus Open, Short, or Idle
Profibus®
Factory Automation
Networked Sensors
Motor/motion Control
HVAC and Building Automation Networks
Networked Security Stations
DESCRIPTION
The ISO1176T is an isolated differential line transceiver with integrated oscillator outputs that provide the primary
voltage for an isolation transformer. The device is ideal for long transmission lines because the ground loop is
broken to allow the device to operate with a much larger common-mode voltage range. The symmetrical isolation
barrier of each device is tested to provide 4242VPK of isolation per VDE for 60 seconds between the line
transceiver and the logic-level interface.
The galvanically isolated differential bus transceiver is an integrated circuit designed for bi-directional data
communication on multipoint bus-transmission lines. The transceiver combines a galvanically isolated differential
line driver and differential input line receiver. The driver has an active-high enable with isolated enable-state
output on the ISODE pin (pin 10) to facilitate direction control. The driver differential outputs and the receiver
differential inputs connect internally to form a differential input/output (I/O) bus port that is designed to offer
minimum loading to the bus whenever the driver is disabled or VCC2 = 0.
Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can
cause damage to the transceiver and/or near-by sensitive circuitry if they are of sufficient magnitude and
duration. The ISO1176T can significantly reduce the risk of data corruption and damage to expensive control
circuits.
The device is characterized for operation over the ambient temperature range of –40°C to 85°C.
D1
D1
D2
GND1
VCC1
R
RE
DE
D
1
2
3
16
15
4
14
13
5
12
6
11
7
10
8
9
VCC2
GND2
GND2
B
A
GND2
ISODE
GND2
D2
R
RE
1
2
5
6
8
D
DE
7
OSC
GALVANIC ISOLATIO N
DW PACKAGE
13
B
12
A
10
ISODE
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Profibus is a registered trademark of Profibus International.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DEVICE INFORMATION
X-FMR
4
8
3
2
7
6
1
5
LDO
D1
1
C4 C5
3
2
C1
OUT
IN
5
C6
EN
GND
NC
4
D2
1
2
4
C2
3
5
6
Control
Circuitry
VCC2
D1
16
C3
Isolated Supply to
other Components
D2
VCC1
B
GND1
A
R
ISODE
13
12
10
Profibus
Interface
RE
7
DE
GND2
D
GND2
8
14, 15
9, 11
Figure 1. Typical Applications
PIN DESCRIPTIONS
NAME
PIN #
FUNCTION
D1
1
Transformer Driver Terminal 1, Open Drain Output
D2
2
Transformer Driver Terminal 2, Open Drain Output
GND1
3
Logic-side Ground
VCC1
4
Logic-side Power Supply
R
5
Receiver Output
RE
6
Receiver Enable Input. This pin has complementary logic.
DE
7
Driver Enable Input
D
8
Driver Input
GND2
9, 11, 14, 15
ISODE
10
Bus-side Driver Enable Output Status
A
12
Non-inverting Driver Output / Receiver Input
B
13
Inverting Driver Output / Receiver Input
VCC2
16
Bus-side Power Supply
2
Bus-side Ground. All pins are internally connected.
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
ABSOLUTE MAXIMUM RATINGS (1)
VCC1,
VCC2
Input supply voltage
(2)
Voltage at any bus I/O terminal
VO
Voltage at D1, D2
VI
Voltage input at D, DE or RE terminal
IO
Receiver output current
ID1, ID2
Transformer Driver Output Current
ESD
Human Body Model
JEDEC Standard 22, Test Method
A114-C.01
Charged Device Model
JEDEC Standard 22, Test Method C101
Machine Model
ANSI/ESDS5.2-1996
Electrostatic
Discharge
Maximum junction temperature
TSTG
Storage temperature
(1)
(2)
UNIT
–0.5 to 7
V
–9 to 14
V
14
V
–0.5 to 7
V
±10
mA
450
mA
Bus pins to GND1
±6
Bus pins to GND2
±10
kV
±4
all pins
TJ
VALUE
±1.5
all pins
kV
±200
V
170
°C
-65 to 150
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values except differential I/O bus voltages are with respect to the referenced network ground terminal and are peak voltage
values.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
VCC
Logic side supply voltage, VCC1 (with respect to GND1)
Bus side supply voltage, VCC2 (with respect to GND2)
VCM
Voltage at either bus I/O terminal
VIH
High-level input voltage
VIL
Low-level input voltage
VID
Differential input voltage
IO
Output Current
TA
Ambient temperature
TJ
Operating junction temperature
1 / tUI
Signaling Rate
Copyright © 2010–2011, Texas Instruments Incorporated
A, B
RE
D, DE
RE
NOM
MAX
UNIT
3
5.5
4.75
5.25
V
–7
12
V
2
VCC1
V
0.8
V
0.7 VCC1
0
D, DE
0.3 VCC1
A with respect to B
–12
12
V
RS-485 driver
–70
70
mA
Receiver
–8
8
-40
85
°C
150
°C
40
Mbps
3
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
SUPPLY CURRENT
over operating free-air temperature range (unless otherwise noted)
PARAMETER
ICC1 (1)
ICC2 (1)
(1)
Logic-side quiescent supply
current
Bus-side quiescent supply current
TEST CONDITIONS
MIN
VCC1 = 3.3 V ± 10%, DE, RE = 0V or VCC1,
No load
TYP
MAX
4.5
8
mA
7
11
mA
13.5
18
mA
VCC1 = 5 V ± 10%, DE, RE = 0V or VCC1, No
load
VCC2 = 5 V ± 5%, DE, RE = 0V or VCC1, No
load
UNIT
ICC1 and ICC2 are measured when device is connected to external power supplies. D1 and D2 are disconnected from external
transformer.
ISODE-PIN ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VOH
High-level output voltage
VOL
Low-level output voltage
MIN
TYP
IOH = –8mA
TEST CONDITIONS
VCC2 – 0.8
4.6
IOH = –20µA
VCC2 – 0.1
5
MAX
UNIT
V
IOL = 8mA
0.2
0.4
IOL = 20µA
0
0.1
V
RS-485 DRIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
VOD
Open-circuit differential output voltage
TEST CONDITIONS
2.1
See Figure 5 and Figure 6, RL = 54Ω
-0.2
0.2
2
3
–0.2
0.2
VOC(SS)
Steady-state common-mode output
voltage
ΔVOC(SS)
Change in steady-state common-mode
output voltage
VOC(pp)
Peak-to-peak common-mode output
voltage
VOD(ring)
Differential output voltage over and under
shoot
See Figure 7 and Figure 10
II
Input current
D, DE at 0V or VCC1
IO(OFF)
Power-off output current
VCC2 = 0 V
IOZ
High-impedance output current
DE at 0V
IOS(P)
Peak short-circuit output current
Differential output capacitance
Common-mode transient immunity
4
V
See Figure 4, Common-mode loading
with Vtest from –7V to +12V
Change in steady-state differential output
voltage between logic states
CMTI
UNIT
VCC2
2.1
|ΔVOD(SS)|
COD
MAX
See Figure 3 and Figure 7
Steady-state differential output voltage
magnitude
Steady-state short-circuit output current
TYP
1.5
|VOD(SS)|
IOS(SS)
MIN
|VA – VB|, See Figure 2
See Figure 5 and Figure 65, RL = 54Ω
V
V
V
0.5
See
Figure 9, DE
at VCC1
10%
–10
10
VOD(pp)
µA
See receiver input current
VOS = –7V to 12V
-250
VOS = 12V, D at GND1
VOS = –7V, D at VCC1
250
135
mA
–135
See receiver CIN
See Figure 20
25
kV/µs
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
RS-485 DRIVER SWITCHING CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
23
35
2
5
25
40
2
5
UNIT
tPLH, tPHL
Prop delay time
tsk(p)
Pulse skew (|tPHL – tPLH|)
tPLH, tPHL
Prop delay time
tsk(p)
Pulse skew (|tPHL – tPLH|)
tr
Differential output signal rise time
2
3
7.5
tf
Differential output signal fall time
2
3
7.5
tpDE
DE to ISODE prop delay
See Figure 14
30
ns
tt(MLH) , tt(MHL)
Output transition skew
See Figure 11
1
ns
tp(AZH), tp(BZH),
tp(AZL), tp(BZL)
Propagation delay, high-impedance-to-active output
tp(AHZ), tp(BHZ),
tp(ALZ), tp(BLZ)
Propagation delay, active-to-high-impedance output
See Figure 12 and
Figure 13,
CL = 50pf, RE at 0 V
| tp(AZL) – tp(BZH) |
| tp(AZH) – tp(BZL) |
Enable skew time
t(CFB)
Time from application of short-circuit to current fold back
t(TSD)
Time from application of short-circuit to thermal shutdown See Figure 9, TA = 25°C
VCC1 = 5V ± 10%,
VCC2 = 5V ± 5%
VCC1 = 3.3V ± 10%,
VCC2 = 5V ± 5%
See Figure 10
ns
ns
ns
80
ns
80
0.55
See Figure 9
1.5
ns
µs
0.5
µs
100
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIT(+)
Positive-going input threshold voltage
VIT(–)
Negative-going input threshold voltage
Vhys
Hysteresis voltage (VIT+ – VIT–)
VOH
High-level output voltage
VOL
Low-level output voltage
VOH
High-level output voltage
VOL
Low-level output voltage
VID = 200 mV, See
Figure 16
VCC1 = 5V ±
10% and VCC2 = VID = –200 mV,
5V ± 5%
See Figure 16
Bus pin input current
IO = 8mA
–200
TYP
MAX
–80
-10
–120
UNIT
mV
25
VID = 200 mV, See
VCC1 = 3.3V ±
Figure 16
10% and VCC2 =
VID = -200 mV, See
5V ± 5%
Figure 16
IA, IB
IA(off),
IB(off)
See Figure 16
MIN
IO = –8mA
VI = –7 or 12V,
Other input = 0 V
IOH = -8mA
VCC1 – 0.4
3
IOH = -20µA
VCC1 – 0.1
3.3
V
IOL = 8mA
0.2
0.4
IOL = 20µA
0
0.1
IOH = –8mA
VCC1 – 0.8
4.6
IOH = –20µA
VCC1 – 0.1
5
V
IOL = 8mA
0.2
0.4
IOL = 20µA
0
0.1
VCC2 = 4.75V
or 5.25V
V
V
–160
200
µA
VCC2 = 0V
II
Receiver enable input current
RE = 0 V
–50
50
µA
IOZ
High-impedance state output current
RE = VCC1
–1
1
µA
RID
Differential input resistance
A, B
60
CID
Differential input capacitance
Test input signal is a 1MHz sine
wave with 1Vpp amplitude. CD is
measured across A and B.
7
CMR
Common mode rejection
See Figure 19
4
Copyright © 2010–2011, Texas Instruments Incorporated
kΩ
10
pF
V
5
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tPLH, tPHL
Propagation delay time
tsk(p)
Pulse skew (|tPHL – tPLH|)
tPLH, tPHL
Propagation delay time
tsk(p)
Pulse skew (|tpHL - tpLH|)
tr
tf
tPZH
Propagation delay, high-impedance-to-high-level output
tPHZ
Propagation delay, high-level-to-high-impedance output
tPZL
Propagation delay, high-impedance-to-low-level output
tPLZ
Propagation delay, low-level-to-high-impedance output
MIN
VCC1 = 5V ± 10%,
VCC2 = 5V ± 5%
TYP
MAX
50
65
2
5
53
70
2
5
Output signal rise time
2
4
Output signal fall time
2
4
13
25
13
25
13
25
13
25
See Figure 16
VCC1 = 3.3V ± 10%,
VCC2 = 5V ± 5%
DE at VCC1, See Figure 17
DE at VCC1, See Figure 18
UNIT
ns
TRANSFORMER DRIVER CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
fOSC
RON
tr_D
tf_D
fSt
tBBM
6
Oscillator frequency
Switch on resistance
D1, D2 output rise time
D1, D2 output fall time
Startup frequency
Break before make time delay
TEST CONDITIONS
MIN
TYP
MAX
VCC1 = 5V ± 10%, D1 and D2 connected to
Transformer
350
450
610
VCC1 = 3.3V ± 10%, D1 and D2 connected to
Transformer
300
400
550
D1 and D2 connected to 50Ω pull-up resistors
1
2.5
VCC1 = 5V ± 10%, See Figure 21, D1 and D2
connected to 50Ω pull-up resistors
80
VCC1 = 3.3V ± 10%, See Figure 21, D1 and
D2 connected to 50Ω pull-up resistors
70
VCC1 = 5V ± 10%, See Figure 21, D1 and D2
connected to 50Ω pull-up resistors
55
VCC1 = 3.3V ± 10%, See Figure 21, D1 and
D2 connected to 50Ω pull-up resistors
80
VCC1 = 2.4 V, D1 and D2 connected to
Transformer
kHz
VCC1 = 3.3V ± 10%, See Figure 21, D1 and
D2 connected to 50Ω pull-up resistors
Ω
ns
ns
350
VCC1 = 5V ± 10%, See Figure 21, D1 and D2
connected to 50Ω pull-up resistors
UNIT
kHz
38
ns
140
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
PARAMETER MEASUREMENT INFORMATION
VCC1
VCC1
IOA
DE
IOA
DE
A
A
II
0 or
VCC1
VOD
D
B
GND1
II
0 or
VCC1
IOB
GND2
B
GND2
GND1
VI
54 W
VOD
D
IOB
VI
VOA
VOB
GND1
VOA
VOB
GND2
GND 1
GND2
Figure 2. Open Circuit Voltage Test Circuit
Figure 3. VOD Test Circuit
VCC2
VCC1
IOA
RL
2
DE
DE
375 W
A
D
0 or 3 V
.
B
+
VOD
-
A
II
0 or
VCC1
60 W
VOD
D
- 7 V to12 V
B
GND1
RL
2
IOB
VI
375 W
GND2
GND2
VOB
GND1
Figure 4. Driver VOD with Common-mode Loading
Test Circuit
VOC
VOA
GND2
Figure 5. Driver VOD and VOC Without
Common-Mode Loading Test Circuit
VCC1
IOA
DE
RL
2
A
Input
Input
Generator : PRR = 500 kHz , 50 % duty
VI
cycle, t r < 6 ns , t f < 6 ns , ZO = 50 W
II
D
VOD
B
GND1
VOB
GND1
RL
2
IOB
GND2
VOA
A
VA
B
VB
VOC
VOC(p-p)
VOC
VOC (SS )
GND2
Figure 6. Steady-State Output Voltage Test Circuit and Voltage Waveforms
VOD(RING )
VOD (SS )
VOD ( pp)
0V differential
Figure 7. VOD(RING) Waveform and Definitions
Copyright © 2010–2011, Texas Instruments Incorporated
7
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
VCC1
IOA
DE
A
0 or
VCC1
II
VI
V OD
B
D
IOB
GND 2
GND 1
V OA
V OB
GND 1
54 W
GND 2
Figure 8. Input Voltage Hysteresis Test Circuit
DE
250
Output Current - mA
IOS
A
D
IOS
B
+
V_
OS
GND1
GND2
135
60
t(CFB)
time
t(TSD)
Figure 9. Driver Short-Circuit Test Circuit and Waveforms (Short Circuit applied at Time t=0)
3V
DE
VCC1
A
D
Input
Generator
B
VI
VOD
R L = 54 W
±1 %
VI
C L = 50 pF
± 20%
VOD
C L includes fixture and
instrumentation capacitance
Generator: PRR= 500 kHz , 50 % duty
cycle, t r < 6ns , t f < 6 ns ,ZO = 50 W
tpHL
tpLH
50 W
GND1
1.5 V
1.5 V
90%
90%
0V
10 %
VOD(H)
0V
10%
VOD(L)
tf
tr
Figure 10. Driver Switching Test Circuit and Waveforms
DE
VCC1
A
50 %
D
Input
Generator
VI
RL= 54 W CL = 50pF
± 20%
±1%
B
50 W
GND1
Generator : PRR= 500 kHz, 50 % duty
cycle, t r< 6ns , t f <6 ns ,ZO = 50 W
50 %
A
VO B tt(MHL)
GND2 V
OA VOB
tt(MLH)
50 %
50 %
CL includes fixture and
instrumentation capacitance
Figure 11. Driver Output Transition Skew Test Circuit and Waveforms
RL= 110 W
VCC2
A
V IN = 0V
B
50 W
GND 1
DE
1.5 V
t(ALZ)
t(AZL)
D
DE
Signal
Generator
CL = 50 pF
A
RL= 110 W
0V
VOA VOB
CL = 50 pF
50%
t(BZH)
B
VOL+ 0.5V
t(BHZ)
50%
VOH - 0.5 V
GND 2
Figure 12. Driver Enable/Disable Test, D at Logic Low Test Circuit and Waveforms
8
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
RL= 110 W
0V
A
VIN = 3. 0V
CL = 50 pF
t(AHZ)
t(AZH)
B
R = 110 W
DE
Signal
Generator
1.5 V
DE
D
VOA VOB
50 W
GND 1
VOH -0.5 V
A
VCC2
50 %
t(BZL)
C L = 50 pF
t(BLZ)
B
VOL 0.5 V
50 %
GND 2
Figure 13. Driver Enable/Disable Test, D at Logic High Test Circuit and Waveforms
VCC1
GALVANIC ISOLATION
VIN = VCC1
VCC2
D
DE
Signal
Generator
tpDE_HL
tpDE_LH
CL = 15 pF
± 20%
50 %
50 %
ISODE
50 W
GND 1
50 %
50 %
DE
ISODE
GND 2
Figure 14. DE to ISODE Prop Delay Test Circuit and Waveforms
IO
V ID
VO
Figure 15. Receiver DC Parameter Definitions
Signal
Generator
Input B
50 W
PRR=100 kHz, 50% duty cycle,
t r <6ns, t f <6ns, ZO = 50 W
Signal
Generator
50 W
A
R
VID
B
C L = 15 pF
(includes probe and
jig capacitance)
1.5 V
50%
IO
Input A
0V
tpLH
VO
tpHL
V OH
90%
Output
1.5 V
10%
tr
tf
V OL
Figure 16. Receiver Switching Test Circuit and Waveforms
Copyright © 2010–2011, Texas Instruments Incorporated
9
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
VCC
D
VCC
DE
A
3V
RE
54 W
1.5 V
1.5 V
B
0V
1 kW
R
tpHZ
tpZH
0V
VOH -0.5 V
C L = 15 pF
Signal
Generator
1.5 V
(includes probe and
jig capacitance)
RE
VO
R
GND
50 W
PRR=100 kHz, 50% duty cycle,
tr<6ns, t f <6ns, ZO = 50 W
Figure 17. Receiver Enable Test Circuit and Waveforms, Data Output High
0V
D
VCC
DE
A
3V
RE
54 W
B
1.5 V
0V
R
tpLZ
tpZL
1 kW
VCC1
VOH
R
1.5 V
C L = 15 pF
VOL +0.5 V
(includes probe and
jig capacitance)
RE
Signal
Generator
1.5 V
VOL
50 W
PRR=100 kHz, 50% duty cycle,
tr<6ns, t f <6ns, Z O = 50 W
Figure 18. Receiver Enable Test Circuit and Waveforms, Data Output Low
VINPUT
freq = 1 to 50 MHz
ampl. = ±5 V
A
100 nF
50 W
470 nF
R
B
RE
50 W
2.2 kW
DE
V
R
Scope
2.2 kW
D
VOFFSET
= -2V to7V
Scope
GND
VCC
100 nF
Figure 19. Common-Mode Rejection Test Circuit
10
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
C = 0.1 mF VCC1
±1%
DE
2.0V
GND 1
VCC2
D
S1
C = 0.1 mF ±1%
A
54 W
B
VOH or VOL
0.8V
R
VOH or VOL
Success / fail criterion :
stabile VOH or V OL outputs.
RE
1 kW
GND1
GND2
CL=15 pF
(includes probe and
jig capacitance)
VTEST
Figure 20. Common-Mode Transient Immunity Test Circuit
tf_D
tr_D
90%
D1
10%
tBBM
tBBM
90 %
D2
10 %
tf_D
tr_D
Figure 21. Transition Times and Break-Before-Make Time Delay for D1, D2 Outputs
Copyright © 2010–2011, Texas Instruments Incorporated
11
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
Table 1. DRIVER FUNCTION TABLE (1)
(1)
VCC1
VCC2
INPUT
(D)
ENABLE INPUT
(DE)
ENABLE
OUTPUT
(ISODE)
OUTPUTS
PU
PU
H
H
H
H
L
PU
PU
L
H
H
L
H
PU
PU
X
L
L
Z
Z
PU
PU
X
open
L
Z
Z
PU
PU
open
H
H
H
L
PD
PU
X
X
L
Z
Z
PU
PD
X
X
L
Z
Z
PD
PD
X
X
L
Z
Z
A
B
PU = Powered Up, PD = Powered Down, H = High Level, L= Low Level, X = Don't Care, Z = High
Impedance (off)
Table 2. RECEIVER FUNCTION TABLE (1)
(1)
12
VCC1
VCC2
DIFFERENTIAL
INPUT
VID = (VA – VB)
ENABLE (RE)
OUTPUT (R)
PU
PU
–0.01V ≤ VID
L
H
PU
PU
-0.2V < VID
< –0.01V
L
?
PU
PU
VID ≤ –0.2V
L
L
PU
PU
X
H
Z
PU
PU
X
open
Z
PU
PU
Open circuit
L
H
PU
PU
Short Circuit
L
H
PU
PU
Idle (terminated)
bus
L
H
PD
PU
X
X
Z
PU
PD
X
L
H
PD
PD
X
X
Z
PU = Powered Up, PD = Powered Down, H = High Level, L= Low Level, X = Don’t Care, Z = High
Impedance (off), ? = Indeterminate
Copyright © 2010–2011, Texas Instruments Incorporated
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
IEC INSULATION AND SAFETY RELATED SPECIFICATIONS FOR 16-DW PACKAGE
over recommended operating conditions (unless otherwise noted)
PARAMETER
L(I01)
Minimum air gap (Clearance)
TEST CONDITIONS
(1)
(1)
TYP
MAX
UNIT
Shortest terminal to terminal distance through air
8.3
mm
Shortest terminal to terminal distance across the
package surface
8.1
mm
400
V
L(I02)
Minimum external tracking (Creepage)
CTI
Tracking resistance (Comparative Tracking
Index)
DIN IEC 60112 / VDE 0303 Part 1
Minimum Internal Gap (Internal Clearance)
Distance through the insulation
RIO
Isolation resistance
Input to output, VIO = 500 V, all pins on each side
of the barrier tied together creating a two-terminal
device
CIO
Barrier capacitance Input to output
CI
Input capacitance to ground
PD
Maximum device power dissipation
VCC1 = 5.5V, VCC2 = 5.25V, TJ = 150°C, CL =
50pf, RL = 54Ω
Input a 20MHz 50% duty cycle square wave
(1)
MIN
0.008
mm
>1012
Ω
VI = VCC/2 + 0.4 sin (2πft), f = 1MHz, VCC = 5 V
2
pF
VI = 0.4 sin (2πft), f = 1MHz
2
pF
719
mW
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to make sure that the mounting pads of the isolator
on the printed circuit board do not reduce this distance.
spacer
Creepage and clearance on a printed circuit board become equal according to the measurement techniques shown in the Isolation
Glossary. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications
IEC 60664-1 RATINGS TABLE
PARAMETER
Basic isolation group
Installation classification
TEST CONDITIONS
Material group
SPECIFICATION
II
Rated mains voltage ≤ 150Vrms
I-IV
Rated mains voltage ≤ 300Vrms
I-III
Rated mains voltage ≤ 400Vrms
I-II
IEC 60747-5-2 INSULATION CHARACTERISTICS (1)
over recommended operating conditions (unless otherwise noted)
PARAMETER
VIORM
Maximum working insulation voltage
VPR
Input to output test voltage
TEST CONDITIONS
SPECIFICATION
UNIT
566
Vpeak
Method b1, VPR = VIORM × 1.875,
100% Production test with t = 1s,
Partial discharge < 5pC
1062
Vpeak
Method a, After environmental tests subgroup 1,
VPR = VIORM × 1.6, t = 10s, Partial discharge < 5pC
906
After Input/Output Safety Test Subgroup 2/3,
VPR = VIORM x 1.2, t = 10s, Partial discharge < 5pC
680
4242
Vpeak
VIOTM
Transient overvoltage
t = 60s (qualification),
t = 1s (100% production)
VIOSM
Maximum surge voltage
Tested per IEC 60065 (Qualification Test)
4242
Vpeak
RS
Insulation resistance
VIO = 500V at TS = 150°C
> 109
Ω
Pollution degree
(1)
2
Climatic Classification 40/125/21
Copyright © 2010–2011, Texas Instruments Incorporated
13
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
REGULATORY INFORMATION
VDE
UL
Certified according to DIN EN 60747-5-2 (VDE 0884 Part 2)
Recognized under 1577 Component Recognition Program
Basic Insulation
Maximum Transient Overvoltage, 4242 VPK
Maximum Surge Voltage, 4242 VPK
Maximum Working Voltage, 566 VPK
Single / Basic Isolation Voltage, 2500 VRMS (1)
File Number: Pending
File Number: Pending
(1)
Production tested ≥ 3000 Vrms for 1 second in accordance with UL 1577.
IEC SAFETY LIMITING VALUES
Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry.
A failure of the IO can allow low resistance to ground or the supply and, without current limiting, dissipate
sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system
failures.
PARAMETER
TEST CONDITIONS
IS
Safety input, output, or supply
current
DW-16
TS
Maximum case temperature
DW-16
MIN
TYP
θJA = 76°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C
MAX
UNIT
347
mA
150
°C
The safety-limiting constraint is the absolute maximum junction temperature specified in the absolute maximum
ratings table. The power dissipation and junction-to-air thermal impedance of the device installed in the
application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the
Thermal Characteristics table is that of a device installed on a High-K Test Board for Leaded Surface Mount
Packages. The power is the recommended maximum input voltage times the current. The junction temperature is
then the ambient temperature plus the power times the junction-to-air thermal resistance.
THERMAL INFORMATION
THERMAL METRIC (1)
ISO1176T
DW-16
θJA
Junction-to-ambient thermal resistance
θJC(top)
Junction-to-case(top) thermal resistance
37.9
θJB
Junction-to-board thermal resistance
44.6
ψJT
Junction-to-top characterization parameter
12.1
ψJB
Junction-to-board characterization parameter
37.9
θJC(bottom)
Junction-to-case(bottom) thermal resistance
n/a
(1)
14
UNITS
76
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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ISO1176T
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www.ti.com
400
VCC1 = VCC2 = 5.5 V
Safety Limiting Current - mA
350
300
250
200
150
100
50
0
0
50
100
150
TC - Case Temperature - °C
200
Figure 22. DW-16 θJC THERMAL DERATING CURVE per IEC 60747-5-2
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15
ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
EQUIVALENT CIRCUIT SCHEMATICS
DE Input
D , RE Input
V CC1
V CC1
V CC1
V CC1
V CC1
1 MW
500 W
500 W
1 MW
ISODE Output
3 .3 -V R Output
V CC2
V CC1
5.5 W
4W
11 W
6.4 W
5 -V R Output
V CC1
5.5 W
11 W
16
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ISO1176T
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www.ti.com
A Input
B Input
V CC2
V CC2
16V
90 kW
Input
16V
16V
18 k W
90 kW
Input
18 kW
18 kW
16V
18 kW
A and B Outputs
V CC2
16V
Output
16V
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ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
TYPICAL CHARACTERISTICS
90
35
No Load
TA = 25°C
30
ICC2 @ 5 V
80
RL = 54 W,
CL = 50 pF,
TA = 25°C
ICC - Supply Current - mA
ICC - Supply Current - mA
70
25
ICC2 @ 5 V
20
15
ICC1 @ 5 V
ICC1 @ 3.3 V
10
5
40
30
20
0
0
5
10
15
20
25
Data Rate - Mbps
30
35
40
Figure 23. RMS SUPPLY CURRENT (ICC1 and ICC2)
vs
SIGNALING RATE WITH NO LOAD
ICC1 @ 3.3 V
ICC1 @ 5 V
5
10
15
20
25
Data Rate - Mbps
30
35
40
-99
VCC2 = 5 V
VCC2 = 5.25 V
4
100 Ω
-79
3.5
50 Ω
3
15 pF Load
TA = 25°C
-89
IO - Output Current - mA
4.5
VCC2 = 4.75 V
2.5
2
1.5
-69
-59
-49
-39
-29
-19
1
0.5
-9
TA = 25 C
0
0
Figure 24. RMS SUPPLY CURRENT (ICC1 and ICC2)
vs
SIGNALING RATE WITH LOAD
5
VOD − Differential Output Voltage − V
50
10
0
0
20
40
60
IL − Load Current − mA
Figure 25. DIFFERENTIAL OUTPUT VOLTAGE
vs
LOAD CURRENT
18
60
80
1
0
1
2
3
4
5
VO - Output Voltage - V
Figure 26. RECEIVER HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
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www.ti.com
TYPICAL CHARACTERISTICS (continued)
0.7
110
15 pF Load
TA = 25°C
100
VCC = 4.75 V
0.6
Driver Enable Skew − ns
IO - Output Current - mA
90
80
70
60
50
40
30
20
0.5
VCC = 5.25 V
0.4
VCC = 5 V
0.3
0.2
0.1
10
0
0
1
2
3
VO - Output Voltage - V
4
0
−40
5
Figure 27. RECEIVER LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
85
58
tPHL (VCC1 = 3.3 V)
56
26
Receiver Propagation Delay - ns
Driver Propagation Delay - ns
−15
10
35
60
TA − Free-Air Temperature − °C
Figure 28. DRIVER ENABLE SKEW
vs
FREE-AIR TEMPERATURE
28
tPLH (VCC1 = 3.3 V)
24
22
tPHL (VCC1 = 5 V)
20
RL = 110 Ω,
CL = 50 pF
tPHL (VCC1 = 5 V)
54
CL = 15 pH,
VCC2 = 5 V
tPHL (VCC1 = 3.3 V)
tPLH (VCC1 = 3.3 V)
52
50
48
tPHL (VCC1 = 5 V)
46
tPLH (VCC1 = 5 V)
44
18
-40
-15
10
35
60
TA - Free-Air Temperature - °C
Figure 29. DRIVER PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
85
42
-40
-15
10
35
60
TA - Free-Air Temperature - °C
85
Figure 30. RECEIVER PROPAGATION DELAY
vs
FREE-AIR TEMPERATURE
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ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
APPLICATION INFORMATION
REFERENCE DESIGN
ISO1176T Reference Design (SLLU471) is available to provide complete isolated data and power solution.
TRANSIENT VOLTAGES
Isolation of a circuit insulates it from other circuits and earth so that noise develops across the insulation rather
than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast
transients that occur after installation and the transient ratings of ISO1176T are sufficient for all but the most
severe installations. However, some equipment manufacturers use their ESD generators to test transient
susceptibility of their equipment and can exceed insulation ratings. ESD generators simulate static discharges
that may occur during device or equipment handling with low-energy but high voltage transients.
Figure 31 models the ISO1176T bus IO connected to a noise generator. CIN and RIN is the device and any other
stray or added capacitance or resistance across the A or B pin to GND2, CISO and RISO is the capacitance and
resistance between GND1 and GND2 of ISO1176T plus those of any other insulation (transformer, etc.), and we
assume stray inductance negligible. From this model, the voltage at the isolated bus return is
Z ISO
vGND2 = vN
ZISO + ZIN and will always be less than 16 V from V . If ISO1176T is tested as a stand-alone device,
N
RIN = 6 × 104Ω, CIN = 16 × 10-12 F, RISO = 109Ω and CISO = 10-12 F.
SPACER
Note from Figure 31 that the resistor ratio determines
the voltage ratio at low frequency and it is the inverse
capacitance ratio at high frequency. In the
stand-alone case and for low frequency,
A,B, Y, or Z
C IN
vGND2
RISO
109
=
=
vN
RISO + RIN
109 + 6 ´ 104
R IN
VN
Bus Return(GND2)
or essentially all of noise appears across the barrier.
At high frequency,
1
v GND2
vN
=
CISO
1
CISO
1
+
CIN
C ISO
=
1+
1
=
CISO
CIN
1
1
1+
16
16 V
R ISO
= 0.94
and 94% of VN appears across the barrier. As long as
RISO is greater than RIN and CISO is less than CIN,
most of transient noise appears across the isolation
barrier, as it should.
System Ground (GND1)
Figure 31. Noise Model
We recommend the reader not test equipment
transient susceptibility with ESD generators or
consider product claims of ESD ratings above the
barrier transient ratings of an isolated interface. ESD
is best managed through recessing or covering
connector pins in a conductive connector shell and
installer training.
20
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ISO1176T
SLLSE28E – OCTOBER 2010 – REVISED AUGUST 2011
www.ti.com
REVISION HISTORY
Changes from Revision initial (October 2010) to Revision A
Page
•
Updated transformer driver characteristics ........................................................................................................................... 6
•
Added Thermal Table data ................................................................................................................................................. 14
Changes from Revision A (December 2010) to Revision B
Page
•
Changed the Steady-state short-circuit output current - Test Conditions and values. ......................................................... 4
•
Changed the Oscillator frequency values ............................................................................................................................. 6
•
Changed the D1, D2 output rise time values ........................................................................................................................ 6
Changes from Revision B (December 2010) to Revision C
Page
•
Added a Typ value of 23ns to Prop delay time for VCC1 = 5V in the RS-485 DRIVER SWITCHING
CHARACTERISTIC table ...................................................................................................................................................... 5
•
Added a Typ value of 25ns to Prop delay time for VCC1 = 3.3V in the RS-485 DRIVER SWITCHING
CHARACTERISTIC table ...................................................................................................................................................... 5
•
Deleted ROFF from the TRANSFORMER DRIVER CHARACTERISTICS table ................................................................... 6
•
Changed θJA = 212°C/W To: θJA = 76°C/W, Changed the IS Max value From: 128mA To: 347mA, and changed
paragraph two in the IEC SAFETY LIMITING VALUES section ........................................................................................ 14
•
Changed Figure 22 ............................................................................................................................................................. 15
Changes from Revision C (February 2011) to Revision D
Page
•
Added Figure 1 ..................................................................................................................................................................... 2
•
Moved the Pin Description closer to the Pin drawing ........................................................................................................... 2
Changes from Revision D (May 2011) to Revision E
Page
•
Deleted the MIN and MAX values for tr_D, tf_D and tBBM specifications in the Transformer Driver Characteristics table. ..... 6
•
Changed test conditions from 1.9 V to 2.4 V, and changed TYP value from 230 to 350 for fSt specification in the
Transformer Driver Characteristics table. ............................................................................................................................. 6
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21
PACKAGE OPTION ADDENDUM
www.ti.com
8-Oct-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
ISO1176TDW
ACTIVE
SOIC
DW
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
ISO1176TDWR
ACTIVE
SOIC
DW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
ISO1176TDWR
Package Package Pins
Type Drawing
SOIC
DW
16
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2000
330.0
16.4
Pack Materials-Page 1
10.75
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
10.7
2.7
12.0
16.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jul-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO1176TDWR
SOIC
DW
16
2000
358.0
335.0
35.0
Pack Materials-Page 2
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