AF85N03 N-Channel Enhancement Mode Power MOSFET Features General Description - Low Gate Charge - Simple Drive Requirement - Fast Switching - RoHS Compliant - Pb Free Plating Product The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version is available for low-profile applications. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 6 ID (A) 75 Pin Assignments Pin Descriptions (Front View) S 3 2 D 1 Pin Name Description S G D Source Gate Drain G Ordering information Feature F :MOSFET A X 85N03 X X PN Package Packing D: TO-252 Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 10, 2005 1/5 AF85N03 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter TC=25ºC TC=100ºC ID Continuous Drain Current, VGS=4.5V IDM Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 30 ±20 75 55 350 107 0.7 -55 to 175 -55 to 175 Drain-Source Voltage Gate-Source Voltage TC=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol RθJC RθJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Maximum 1.4 110 Max. Max. Units ºC/W ºC/W Electrical Characteristics (TJ=25ºC unless otherwise noted) Symbol BVDSS ∆BVDSS/∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 2) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current(TJ=25ºC) Drain-Source Leakage Current(TJ=175ºC) Gate Source Leakage Total Gate Charge (Note 2) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 2) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 Limits Typ. - Max. - - 0.018 - 1 - 32 6 10 3 - VDS=30V, VGS=0V - - 1 VDS=24V, VGS=0V - - 500 VGS=±20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω, VGS=10V RD=0.5Ω VGS=0V VDS=25V, f=1.0MHz - 33 7.5 24 11.2 77 35 67 2700 550 380 ±100 52 4200 - Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dl/dt=100A/µs Min. - Typ. 28 10 Max. 1.3 - Test Conditions VGS=0V, ID=250uA Reference to 25ºC, ID=1mA VGS=10V, ID=45A VGS=4.5V, ID=30A VDS= VGS, ID=250uA VDS=10V, ID=30A Unit V V/ºC mΩ V S uA nA nC nS pF Source-Drain Diode Symbol Parameter VSD Forward On Voltage (Note 2) trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit V ns nC Note 1: Pulse width limited by safe operating area. Note 2: Pulse width < 300us, duty cycle < 2%. Anachip Corp. www.anachip.com.tw Rev. 1.0 2/5 Aug 10, 2005 AF85N03 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw Rev. 1.0 3/5 Aug 10, 2005 AF85N03 N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw Rev. 1.0 4/5 Aug 10, 2005 AF85N03 N-Channel Enhancement Mode Power MOSFET Marking Information TO-252 ( Top View) Logo 85N03 YYWWX Part Number YY : Year WW: Nth week X : Internal code ( Optional) Package Information Package Type: TO-252 F1 E1 E3 E2 D D1 F B1 e e C A3 A2 R: 0.127~0.381 (0.1mm) 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A2 A3 B1 D D1 F F1 E1 E2 E3 e C Dimensions In Millimeters Min. Nom. Max. 1.80 2.30 2.80 0.40 0.50 0.60 0.40 0.70 1.00 6.00 6.50 7.00 4.80 5.35 5.90 2.20 2.63 3.05 0.50 0.85 1.20 5.10 5.70 6.30 0.50 1.10 1.70 3.50 4.00 4.50 2.30 0.35 0.50 0.65 Anachip Corp. www.anachip.com.tw Rev. 1.0 5/5 Aug 10, 2005