Anachip AF85N03DA N-channel enhancement mode power mosfet Datasheet

AF85N03
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Low Gate Charge
- Simple Drive Requirement
- Fast Switching
- RoHS Compliant
- Pb Free Plating Product
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters. The through-hole version is available for
low-profile applications.
„ Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
6
ID (A)
75
„ Pin Assignments
„ Pin Descriptions
(Front View)
S
3
2
D
1
Pin Name
Description
S
G
D
Source
Gate
Drain
G
„ Ordering information
Feature
F :MOSFET
A X
85N03 X X
PN
Package
Packing
D: TO-252
Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
1/5
AF85N03
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
TC=25ºC
TC=100ºC
ID
Continuous Drain Current, VGS=4.5V
IDM
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
30
±20
75
55
350
107
0.7
-55 to 175
-55 to 175
Drain-Source Voltage
Gate-Source Voltage
TC=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Maximum
1.4
110
Max.
Max.
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
BVDSS
∆BVDSS/∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 2)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(TJ=25ºC)
Drain-Source Leakage
Current(TJ=175ºC)
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
Limits
Typ.
-
Max.
-
-
0.018
-
1
-
32
6
10
3
-
VDS=30V, VGS=0V
-
-
1
VDS=24V, VGS=0V
-
-
500
VGS=±20V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω, VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V,
f=1.0MHz
-
33
7.5
24
11.2
77
35
67
2700
550
380
±100
52
4200
-
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dl/dt=100A/µs
Min.
-
Typ.
28
10
Max.
1.3
-
Test Conditions
VGS=0V, ID=250uA
Reference to 25ºC,
ID=1mA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS= VGS, ID=250uA
VDS=10V, ID=30A
Unit
V
V/ºC
mΩ
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
VSD
Forward On Voltage (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Unit
V
ns
nC
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
2/5
Aug 10, 2005
AF85N03
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/5
Aug 10, 2005
AF85N03
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/5
Aug 10, 2005
AF85N03
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
TO-252
( Top View)
Logo
85N03
YYWWX
Part Number
YY : Year
WW: Nth week
X : Internal code ( Optional)
„ Package Information
Package Type: TO-252
F1
E1
E3
E2
D
D1
F
B1
e
e
C
A3
A2
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
2.30
0.35
0.50
0.65
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
5/5
Aug 10, 2005
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