Fairchild HGT1S12N60A4S9A 600v, smps series n-channel igbt Datasheet

HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
Data Sheet
August 2003
600V, SMPS Series N-Channel IGBTs
Features
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
• >100kHz Operation at 390V, 12A
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Formerly Developmental Type TA49335.
Packaging
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
Ordering Information
PART NUMBER
JEDEC TO-220AB ALTERNATE VERSION
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S9A
TO-263AB
12N60A4
COLLECTOR
(FLANGE)
E
C
G
NOTE: When ordering, use the entire part number.
Symbol
JEDEC TO-263AB
C
COLLECTOR
(FLANGE)
G
G
E
JEDEC STYLE TO-247
E
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A
UNITS
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
54
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
23
A
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
167
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
PARAMETER
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = -10mA, VGE = 0V
20
-
-
V
-
-
250
µA
-
-
2.0
mA
-
2.0
2.7
V
-
1.6
2.0
V
-
5.6
-
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
VCE = 600V
IC = 12A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
-
-
±250
nA
60
-
-
A
-
8
-
V
VGE = 15V
-
78
96
nC
VGE = 20V
-
97
120
nC
-
17
-
ns
-
8
-
ns
-
96
-
ns
-
18
-
ns
-
55
-
µJ
Switching SOA
SSOA
TJ = 150oC, RG = 10Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 12A, VCE = 300V
On-State Gate Charge
Qg(ON)
IC = 12A,
VCE = 300V
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 390V
VGE =15V
RG = 10Ω
L = 500µH
Test Circuit (Figure 20)
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
160
-
µJ
Turn-Off Energy (Note 2)
EOFF
-
50
-
µJ
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Current Turn-On Delay Time
IGBT and Diode at TJ = 125oC
td(ON)I
Current Rise Time
ICE = 12A
VCE = 390V
VGE = 15V
RG = 10Ω
L = 500µH
Test Circuit (Figure 20)
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
TEST CONDITIONS
tfI
MIN
TYP
MAX
UNITS
-
17
-
ns
-
16
-
ns
-
110
170
ns
-
70
95
ns
-
55
-
µJ
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
250
350
Turn-Off Energy (Note 2)
EOFF
-
175
285
µJ
0.75
oC/W
Thermal Resistance Junction To Case
-
RθJC
-
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
60
50
40
30
20
10
0
0
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
500
300
100
TC
VGE
75oC
15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
TJ = 125oC, RG = 10Ω, L = 500µH, V CE = 390V
10
1
3
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
30
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
300
VCE = 390V, RG = 10Ω, TJ = 125oC
18
275
250
16
14
225
ISC
12
200
10
175
8
150
6
125
tSC
100
4
2
75
0
50
9
10
11
12
13
14
15
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
1.0
1.5
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
TJ = 125oC, VGE = 12V, VGE = 15V
400
300
200
0
TJ = 25oC, VGE = 12V, VGE = 15V
2
4
6
8
10 12 14 16 18 20 22
ICE , COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
1.0
1.5
2
2.5
RG = 10Ω, L = 500µH, VCE = 390V
350
300
TJ = 125oC, VGE = 12V OR 15V
250
200
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
2
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
32
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
28
17
16
TJ = 25oC, TJ = 125oC, VGE = 12V
15
14
13
24
TJ = 125oC, OR TJ = 25oC, VGE = 12V
20
16
12
8
12
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
11
10
16
24
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
20
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
600
100
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
400
RG = 10Ω, L = 500µH, VCE = 390V
500
24
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
ICE, COLLECTOR TO EMITTER CURRENT (A)
Unless Otherwise Specified (Continued)
trI , RISE TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
0
2
4
6
8
10
12
14
16
18
20
22
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
24
2
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Unless Otherwise Specified (Continued)
115
90
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
Typical Performance Curves
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
70
TJ = 125oC, VGE = 12V OR 15V
60
50
40
30
TJ = 25oC, VGE = 12V OR 15V
90
20
85
2
4
6
8
10
12
14
16
18
20
22
10
24
2
4
6
16
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
TJ = 25oC
TJ = -55oC
150
TJ = 125oC
100
50
0
6
7
8
11
14
9
10
12
13
VGE, GATE TO EMITTER VOLTAGE (V)
15
ICE = 24A
0.6
0.4
ICE = 12A
0.2
ICE = 6A
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
©2003 Fairchild Semiconductor Corporation
18
20
22
24
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
0
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL = EON2 + EOFF
50
16
10
20
30
40
50
60
QG , GATE CHARGE (nC)
70
80
FIGURE 14. GATE CHARGE WAVEFORMS
0.8
0
25
14
0
16
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
1.0
12
14
FIGURE 13. TRANSFER CHARACTERISTIC
1.2
10
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
1000
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
3.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
COES
0.5
CRES
0
0
5
10
15
20
25
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
9
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
0.1
10-1
t1
0.05
PD
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP660
90%
10%
VGE
EON2
EOFF
L = 500µH
VCE
RG = 10Ω
90%
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
©2003 Fairchild Semiconductor Corporation
FIGURE 21. SWITCHING TEST WAVEFORMS
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
ACEx™
FAST®
ActiveArray™
FASTr™
Bottomless™
FRFET™
CoolFET™
CROSSVOLT™ GlobalOptoisolator™
GTO™
DOME™
HiSeC™
EcoSPARK™
I2C™
E2CMOS™
EnSigna™
ImpliedDisconnect™
FACT™
ISOPLANAR™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5