BAV70T FM120-M+ BAV99TTHRU BAW56T FM1200-M+ WILLAS SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features SWITCHING DIODE process design, excellent power dissipation offers • Batch FEATURES better reverse leakage current and thermal resistance. Low profile surface z Fast•Switching Speedmounted application in order to optimize board space. z For General Purpose Switching loss, high efficiency. Applications • Low power High current capability, low forward voltage drop. z High• Conductance surge capability. • Highpackage z Pb-Free is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Halogen freeepitaxial productplanar for packing code suffix “H” chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free Moisture Sensitivity Level 1 z SOT-523 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated solderable per MIL-STD-750 BAW56T Marking: JD terminals, BAV70T Marking: JJ BAV99T 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Marking: JE Method 2026 • Polarity : Indicated by cathode band Maximum Ratings @Ta=25℃ • Mounting Position : Any Parameter • Weight : Approximated 0.011 gram Symbol Dimensions in inches and (millimeters) Limit Unit Reverse voltage VR 85 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. IO Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Forward power dissipation PD Forward current RATINGS V 75 mA 150 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Junction temperature Marking Code Tj TVRRM Maximum Recurrent Peak Reverse Voltage Storage temperature stg VRMS Maximum RMS Voltage 12 20 13 30 14 40 14 21 28 150 15 50 16 60 18 80 10 100 35 42 56 70 60 80 100 -55~+150 Maximum DC Blocking Voltage 20 30 40 50 VDC unless ELECTRICAL CHARACTERISTICS (Ta=25℃ otherwise specified) IO Maximum Average Forward Rectified Current Parameter Symbol Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Reverse breakdown voltage Typical Thermal Resistance (Note 2) Operating Range ReverseTemperature voltage leakage current Storage Temperature Range Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Diode NOTES: RΘJA IR1 IR2 TSTG VR=25V VF Reverse recovery time 2012-06 2012-1 Vo 105 140 Vo 150 200 Vo 30 Am Max 85 40 120 Unit Am V 2 μA 0.03 μA -55 to +150 - 65 to +175 VF IF=10mA CD 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 120 200 1.0 Min -55 to +125 ℃ 115 150 ℃ P ℃ ℃ 715 IF=1mA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL @T A=125℃ capacitance conditions IR= 1μA CJ VR=75V TJ CHARACTERISTICS Forward voltage IFSM V(BR) Typical Junction Capacitance (Note 1) Test ℃ t rr IR 0.50 IF=50mA IF=150mA VR=0 f=1MHz IF=IR=10mA Irr=0.1×IR,RL=100Ω 0.70 0.85855 0.5 10 1000 1250 0.9 mV 0.92 Vo mA 1.5 pF 4 ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAV70T FM120-M+ BAV99TTHRU BAW56T FM1200-M+ WILLAS SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Typical Characteristics T= a 2 5℃ 1 Mechanical data 0.4 Method 2026 0.8 FORWARD VOLTAGE VF Polarity : Indicated by cathode band • • Mounting Position : Any • Weight : Approximated 0.011 gram 1.2 Characteristics 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. (nA) 3000 • Epoxy : UL94-V0 rated flame retardant 0.3 • Case : Molded plastic, SOD-123H , •0.1Terminals :Plated terminals, solderable per MIL-STD-750 0.0 SOD-123H Reverse 10000 REVERSE CURRENT IR better reverse leakage current and thermal resistance. surface mounted application in order to • Low profileForward Characteristics 300optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. 100 • High surge capability. •30Guardring for overvoltage protection. • Ultra high-speed switching. •10Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • 3RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" T= a 1 00 ℃ FORWARD CURRENT IF (mA) • Batch process design, excellent power dissipation offers 0.071(1.8) 0.056(1.4) 300 100 30 Ta=25℃ 10 0.040(1.0) 0.024(0.6) 3 1 1.6 Ta=100℃ 1000 0.031(0.8) Typ. 0 0.031(0.8) Typ. 20 (V) 40 60 80 100 DimensionsVOLTAGE in inches andV(millimeters) REVERSE (V) R MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSPower Derating Curve Capacitance Characteristics 150 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH Maximum 1.2Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 1.0 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 0.8 superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) 0.6 IFSM RΘJA Typical Thermal Resistance (Note 2) 0 4 Range Operating Temperature 8 16 TJ 12 Storage Temperature Range REVERSE VOLTAGE VR CHARACTERISTICS 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 21 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 30 100 50 0 -55 to +1250 1.0 Am 30 Am ℃ 40 120 25 50 75 P -55 100 - 65 to +175 AMBIENT TEMPERATURE TSTG (V) to +150 125 Ta ℃ 150 ℃ (℃) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage (mW) RATINGS Marking Code PD 1.4 200 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ratings1.6 at 25℃ ambient temperature unless otherwise specified. Ta=25℃ Single phase half wave, 60Hz, resistive of inductive load. f=1MHz For capacitive load, derate current by 20% @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAV70T FM120-M+ BAV99TTHRU BAW56T FM1200-M+ WILLAS SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-523 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .004(0.10)MIN. Halogen free product for packing code suffix "H" .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. ,.067(1.70) • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 .059(1.50) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .069(1.75) .057(1.45) Mechanical data 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code Maximum DC Blocking Voltage .043(1.10) .035(0.90) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) VRRM 21 28 35 42 30 40 50 60 Rated DC Blocking Voltage @T A=125℃ 2- Thermal Resistance From Junction to Ambient 115 150 120 200 Vo 56 70 105 140 Vo 80 100 150 200 Vo 1.0 Am IFSM 30 Am RΘJA 40 120 -55 to +125 ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN IR .014(0.35) 1- Measured at 1 MHZ and applied reverse voltage of.006(0.15) 4.0 VDC. NOTES: .008(0.20) 18 10 80 100 .004(0.10) IO VF Maximum Average Reverse Current at @T A=25℃ 16 60 20 TJ CHARACTERISTICS 15 50 14 Operating Temperature Range Maximum Forward Voltage at 1.0A DC 40 VDC CJ .004(0.10)MAX. 30 VRMS Typical Junction Capacitance (Note 1) Storage Temperature Range 12 20 0.50 0.70 0.85 0.9 0.92 0.5 .035(0.90) .028(0.70) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .014(0.35) 13 14 .010(0.25) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 10 Vo mA Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.