DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance (1.0V max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected up to 2kV • • • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) SOT363 ESD PROTECTED TO 2kV D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN5L06DWK-7 Notes: Case SOT363 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September DAB YM DAB YM NEW PRODUCT Features Date Code Key Year Code Month Code 2006 T 2007 U 2008 V … … 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E 2018 F 2019 G Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN5L06DWK Document number: DS30930 Rev. 6 - 2 1 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN5L06DWK Maximum Ratings @TA = +25°C unless otherwise specified Characteristic NEW PRODUCT Drain Source Voltage Gate-Source Voltage Drain Current Symbol VDSS VGSS Unit V V ID Value 50 ±20 305 800 Symbol PD RθJA TJ, TSTG Value 250 500 -65 to +150 Unit mW °C/W °C Continuous Pulsed (Note 6) mA Thermal Characteristics @TA = +25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = +25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 50 60 V nA IGSS 1 500 50 µA nA nA VGS(th) 1.4 1.0 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD 0.49 0.5 200 0.5 1.4 A mS V Ciss Coss Crss 50 25 5.0 pF pF pF RDS (ON) On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Test Condition VGS = 0V, ID = 10µA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250µA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 PCB. 6. Pulse width ≤10µS, Duty Cycle ≤1%. 7. Short duration pulse test used to minimize self-heating effect. DMN5L06DWK Document number: DS30930 Rev. 6 - 2 2 of 6 www.diodes.com August 2014 © Diodes Incorporated NEW PRODUCT DMN5L06DWK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ( Ω) 10 0 -50 75 100 125 150 -25 25 50 0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06DWK Document number: DS30930 Rev. 6 - 2 3 of 6 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage August 2014 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 PD, POWER DISSIPATION (mW) NEW PRODUCT DMN5L06DWK 200 150 100 50 0 -50 0 50 100 TA, AMBIENT TEMPERATURE (°C) Fig. 11 Derating Curve - Total DMN5L06DWK Document number: DS30930 Rev. 6 - 2 150 4 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN5L06DWK Package Outline Dimensions NEW PRODUCT A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMN5L06DWK Document number: DS30930 Rev. 6 - 2 5 of 6 www.diodes.com August 2014 © Diodes Incorporated DMN5L06DWK NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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