BYX82-BYX86 2.0A Axial Leaded Silicon Mesa Rectifiers Features · Glass passivated junction · Hermetically sealed package B A · Low reverse current A · High surge current loading C D Mechanical Data DO-15 · Case: Molded Plastic Dim Min Max A 25.40 ¾ B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm Maximum Ratings and Electrical Characteristics Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Test Conditions @ TA = 25°C unless otherwise specified Type BYX82 BYX83 BYX84 BYX85 BYX86 tp=10ms, half sinewave Repetitive peak forward current Average forward current Tamb 45°C i2*t–rating Junction and storage temperature range Parameter Test Conditions Forward voltage IF=1A Reverse current VR=VRRM VR=VRRM, Tj=100°C Diode capacitance VR=4V, f=0.47MHz Reverse recovery time IF=0.5A, IR=1A, iR=0.25A Reverse recovery charge IF=IR=1A, di/dt=5A/ms x 1 of 3 Type Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV i2*t Tj=Tstg Symbol Min VF IR IR CD trr Qrr Value 200 400 600 800 1000 50 Unit V V V V V A 10 A 2 A 8 A2*s –65...+175 °C Typ Max Unit 0.9 1.0 V 0.1 1 mA 10 25 mA 20 pF 2 4 ms 3 6 mC 10 120 l l 100 IF – Forward Current ( A ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 80 TL=constant 60 40 Tj = 25°C 0.1 20 Scattering Limits 0 0.01 0 5 10 15 20 25 30 0 l – Lead Length ( mm ) 94 9572 240 VR RM 160 VR 120 80 BYX 84 BYX 83 40 BYX 85 BYX 86 0 0 400 800 1200 18 12 6 f = 470kHz Tj = 25°C 0.1 94 9574 Figure 2. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Z thp – Thermal Resistance for Pulse Cond. (K/W) 24 0 1600 Reverse / Repetitive Peak Reverse Voltage ( V ) 94 9579 3.0 2.4 Figure 3. Forward Current vs. Forward Voltage CD – Diode Capacitance ( pF ) RthJA 100K/W BYX 82 1.8 30 v v v 1.2 RthJA 35K/W RthJA 57K/W 200 0.6 VF – Forward Voltage ( V ) 94 9573 Figure 1. Max. Thermal Resistance vs. Lead Length T j – Junction Temperature (° C ) Tj =175°C 1 1 100 10 VR – Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 1000 v v VRRM 200V RthJA 100K/W 100 94 9575 tp/T=0.5 10 tp/T=0.2 tp/T=0.1 tp/T=0.05 Tamb= 25°C Tamb= 100°C 0.02 Tamb= 70°C Tamb= 150°C 0.01 1 10–3 Tamb= 45°C Tamb= 125°C Single Pulse 10–2 10–1 100 101 tp – Pulse Length ( s ) Figure 5. Thermal Response 2of3 100 101 IFRM – Repetitive Peak Forward Current ( A ) 102 Z thp – Thermal Resistance for Pulse Cond. (K/W) 1000 v v v VRRM 1000V t 10ms RthJA 100K/W 100 94 9578 tp/T=0.5 10 Tamb= 25°C Tamb= 45°C Tamb= 60°C tp/T=0.2 tp/T=0.1 tp/T=0.05 Tamb= 70°C 0.02 Tamb= 100°C 0.01 1 10–3 Single Pulse 10–2 10–1 100 101 tp – Pulse Length ( s ) Figure 6. Thermal Response 3of3 10–1 100 IFRM – Repetitive Peak Forward Current ( A ) 101