GL1A THRU GL1M GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere MiniMELF FEATURES ◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction C MECHANICAL DATA B ◇ Case:Minimelf,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.0023 ounces, 0.006 gram ◇ Mounting position: Any A DIMENSIONS DIM A B C INCHES MIN .130 .008 .055 MM MIN 3.30 .20 1.40 MAX .146 .016 .059 MAX 3.70 .40 1.50 NOTE ∅ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. GL 1A Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forword rectified current T A=75℃ VRRM VRMS VDC GL 1B GL 1D GL GL GL GL 1G 1J 1K 1M 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 UNITS V V V I(AV) 1.0 A IFSM 30 A VF 1.1 V Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at 1.0A Maximum DC reverse current @TA=25℃ at rated DC blockjing voltage @T A=125℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Typical thermal resistance (NOTE 3) Operating temperature range Storage temperature range 5.0 IR Cj RjθL RjθA Tj TSTG 50 15 20 50 - 55 --- + 175 - 55 --- + 175 NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC. 2. Thermal resistance junction to lead, 6.0 mm 2 coppeer pads to each terminal. 3. Thermal resistance junction to ambient, 6.0 mm 2 coppeer pads to each terminal. www.shunyegroup.com.cn μA pF ℃/W ℃/W ℃ ℃ 1.0 .8 .6 .4 Single Phase Half Wave 60Hz Resistive or Inductive Load .2 0 0 25 50 75 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 100 125 150 175 AMBIENT TEMPERATURE, ( ) 50 40 30 20 10 1 INSTANTANEOUS REVERSE CURRENT, (uA) T J = 25 .1 Pulse Width = 300us 1% Duty Cycle 1.0 1.2 1.4 1.6 60 80 100 .4 .1 .04 TJ = 25 .01 0 20 100 60 40 20 TJ = 25 2 1 .2 .4 40 TJ = 100 1.0 200 .1 20 10 FIG. 5 - TYPICAL JUNCTION CAPACITANCE 10 6 4 6 8 10 1.0 2 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, (V) JUNCTION CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) 1.0 .8 4 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 10 .6 2 NUMBER OF CYCLES AT 60Hz FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS .01 .4 8.3ms Single Half Sine-Wave (JEDED Method) 0 4 10 20 40 REVERSE VOLTAGE, ( V ) www.shunyegroup.com.cn 100