NTE NTE56059 Nte56058 thru nte56060 triac, 16a Datasheet

NTE56058 thru NTE56060
TRIAC, 16A
Description:
The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated full–pack type package
designed for use in applications requiring high bidirectional transient and blocking voltage capability and
high thermal cycling performance. Typical applications include motor control, industrial and domestic
lighting, heating and static switching.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage, VDRM
NTE56058 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE56059 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
2
I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs)
MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
5
35
mA
MT2 (+), G (–)
–
8
35
mA
MT2 (–), G (–)
–
10
35
mA
MT2 (–), G (+)
–
22
70
mA
–
7
40
mA
MT2 (+), G (–)
–
20
60
mA
MT2 (–), G (–)
–
8
40
mA
MT2 (–), G (+)
–
10
60
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
VD = 12V, IT = 0.1A
IL
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
6
30
mA
On–State Voltage
VT
IT = 20A
–
1.2
1.6
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
–
0.1
0.5
mA
100
250
–
V/µs
–
20
–
V/µs
ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
VD = VDRMmax, TJ = +125°C
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt
Critical Rate–of–Change of
Commutating Voltage
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
dVcom/dt VDM = 400V, TJ = +95°C, ITRMS = 16A,
dIcom/dt = 7.2A/ms, Gate Open
Gate Controlled Turn–On Time
tgt
Isolation Characteristics
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL
R.H. ≤ 65%, Clean and Dustfree
–
–
1500
V
Capacitance from T2 to
External Heatsink
CISOL
f = 1MHz
–
12
–
pF
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.669
(17.0)
Max
.165
(4.2)
MT1 MT2 G
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max
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