NTE56058 thru NTE56060 TRIAC, 16A Description: The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated full–pack type package designed for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage, VDRM NTE56058 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56059 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non–Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2 I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (+), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (–), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed 15A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit – 5 35 mA MT2 (+), G (–) – 8 35 mA MT2 (–), G (–) – 10 35 mA MT2 (–), G (+) – 22 70 mA – 7 40 mA MT2 (+), G (–) – 20 60 mA MT2 (–), G (–) – 8 40 mA MT2 (–), G (+) – 10 60 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) VD = 12V, IT = 0.1A IL VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A – 6 30 mA On–State Voltage VT IT = 20A – 1.2 1.6 V VD = 12V, IT = 0.1A – 0.7 1.5 V 0.25 0.4 – V – 0.1 0.5 mA 100 250 – V/µs – 20 – V/µs ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs – 2 – µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off–State Leakage Current ID VD = VDRMmax, TJ = +125°C Dynamic Characteristics Critical Rate–of–Rise of Off–State Voltage dVD/dt Critical Rate–of–Change of Commutating Voltage VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, Gate Open dVcom/dt VDM = 400V, TJ = +95°C, ITRMS = 16A, dIcom/dt = 7.2A/ms, Gate Open Gate Controlled Turn–On Time tgt Isolation Characteristics RMS Isolation Voltage from All 3 Pins to External Heatsink VISOL R.H. ≤ 65%, Clean and Dustfree – – 1500 V Capacitance from T2 to External Heatsink CISOL f = 1MHz – 12 – pF .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) MT1 MT2 G .531 (13.5) Min .100 (2.54) .059 (1.5) Max .173 (4.4) Max .114 (2.9) Max