CREE C505RT290-S0200 Reduced forward voltage 3.2 v typical at 20 ma Datasheet

Cree® RazerThin® RT290TM LEDs
CxxxRT290-S0200
Data Sheet
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
APPLICATIONS
•
Thin 95 μm Chip
•
Reduced Forward Voltage
––
White LEDs
––
––
Blue LEDs
––
Green LEDs
•
•
3.2 V Typical at 20 mA
RazerThin LED Performance
Mobile Phone Key Pads
––
460nm - 3.8-11.1 mW
•
Cellular Phone LCD Backlighting
––
470nm - 3.4-10.4 mW
•
Digital Camera Flash For Mobile Appliances
––
505nm - 2.0-6.5 mW
•
Automotive Dashboard Lighting
––
527nm - 1.7-6.0 mW
•
LED Video Displays
•
Audio Product Display Lighting
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxRT290-S0200 Chip Diagram
R3CL, Rev. B
Datasheet: CP
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
270 x 270 μm
Mesa (junction)
246 x 246 μm
Gold Bond Pad
110 μm Diameter
Subject to change without notice.
www.cree.com
Anode (+)
InGaN
SiC Substrate
h = 95 μm
Backside
Metallization
Cathode (-)
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxRT290-S0200
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Class 2
Note 2
Note 3
Reverse Current
[I(Vr=5V), μA]
Forward Voltage (Vf, V)
Min.
Typ.
Max.
Max.
C460RT290-S0200
2.7
3.2
3.7
1
C470RT290-S0200
2.7
3.2
3.7
1
C505RT290-S0200
2.7
3.2
3.7
1
C527RT290-S0200
2.7
3.2
3.7
1
Mechanical Specifications
Description
CxxxRT290-S0200
Dimension
Tolerance
P-N Junction Area (μm)
246 x 246
± 25
Top Area (μm)
270 x 270
± 25
Bottom Area (μm)
270 x 270
± 25
95
± 15
Au Bond Pad Diameter (μm)
110
± 20
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Width (μm)
20
± 10
Chip Thickness (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding
the ability of Products to withstand ESD.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
Specifications are subject to change without notice.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
2
CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Standard Bins for CxxxRT290-S0200
All LED chips are sorted onto die sheets according to the bins shown below. All dominant wavelength and radiant flux
values are specified at If = 20 mA.
C460RT290-S0200
Radiant Flux
11.1 mW
7.2 mW
C460RT290-0205
C460RT290-0206
C460RT290-0207
C460RT290-0208
C460RT290-0201
C460RT290-0202
C460RT290-0203
C460RT290-0204
3.8 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
Radiant Flux
C470RT290-0205
C470RT290-0206
C470RT290-0207
C470RT290-0208
C470RT290-0201
C470RT290-0202
C470RT290-0203
C470RT290-0204
3.4 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
Radiant Flux
4.0 mW
C505RT290-0203
C505RT290-0204
C505RT290-0201
C505RT290-0202
2.0 mW
500 nm
505 nm
Dominant Wavelength
475 nm
510 nm
C527RT290-S0200
6.0 mW
3.5 mW
472.5 nm
C505RT290-S0200
6.5 mW
Radiant Flux
465 nm
C470RT290-S0200
10.4 mW
6.7 mW
462.5 nm
C527RT290-0204
C527RT290-0205
C527RT290-0206
C527RT290-0201
C527RT290-0202
C527RT290-0203
1.7 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
3
CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
Characteristic Curves
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs. Forward Voltage
12.00
30
10.00
25
460nm
8.00
527nm
20
Shift (nm)
If (mA)
6.00
15
505nm
4.00
2.00
10
0.00
5
-2.00
0
5
10
15
20
25
30
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-4.00
5.0
If (mA)
Vf (V)
Relative Intensity vs Forward Current
Relative Intensity vs Peak Wavelength
100
140
120
Relative Intensity (%)
80
% Intensity
100
80
60
60
40
40
20
20
0
400
0
5
10
15
20
25
30
500
Wavelength (nm)
600
If(mA)
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
4
CPR3CL Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
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