Isahaya INC6005AP1 For low frequency amplify application silicon npn epitaxial type Datasheet

<SMALL-SIGNAL TRANSISTOR>
INC6005AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
UNIT:mm
INC6005AP1 is a silicon NPN transistor.
4.6 MAX
1.6
It is designed with high voltage.
1.5
FEATURE
0.8 MIN
B
2.5
C
E
・High voltage VCEO = 400V
4.2 MAX
・Small package for easy mounting.
0.53
MAX
0.4
0.48 MAX
1.5
3.0
APPLICATION
マーキング
MARKING
DC-DC converter, High voltage switching.
TERMINAL
CONNECTOR
電極接続
E:EMITTER
E: エミッタ
JEITA:SC-62
EIAJ
: SC-62
JEDEC:SOT-89
JEDEC :
C: コレクタ
C:COLLECTOR
B: ベース
B:BASE
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
400
V
7
V
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
400
V
I
Collector current
100
mA
C
PC
Collector dissipation(Ta=25℃)
500
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
B D
W
LOT №
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
hFE ITEM
(Ta=25℃)
TEST CONDITIONS
LIMITS
MIN
TYP
MAX
UNIT
V(BR)CBO
C to B break down voltage
I C=50μA,I E=0mA
400
-
-
V
V(BR)EBO
E to B break down voltage
I E=50μA,I C=0mA
7
-
-
V
V(BR)CEO
C to E break down voltage
I C=1mA,RBE=∞
400
-
-
V
ICBO
Collector cut off current
VCB=400V,I E=0mA
-
-
1
μA
IEBO
Emitter cut off current
VEB=6V,I C=0mA
-
-
1
μA
hFE
DC forward current gain
VCE=10V,I C=10mA
82
-
280
-
VCE(sat)
C to E saturation voltage
I C=10mA,I B=1mA
-
-
0.5
V
fT
Gain bandwidth product
VCE=20V, I E=-10mA
-
70
-
MHz
Cob
Collector output capacitance
VCE=10V, I E=0mA, f=1MHz
-
3.3
-
pF
ISAHAYA ELECTRONICS CORPORATION
<SMALL-SIGNAL TRANSISTOR>
INC6005AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICIAL CHARACTERISTICS
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
COMMON EMITTER TRANSFER
1000
100
VCE=10V
Ta=100℃
COLLECTOR CURRENT IC(mA)
DC FORWARD CURRENT GAIN hFE(-)
VCE=10V
100
Ta=25℃
Ta=-40℃
80
Ta=25℃
60
Ta=100℃
40
20
0
10
0.1
1
10
0
100
BASE TO EMITTER SATURATION VOLTAGE
VBE(sat)(V)
1000
IC/IB=10
Ta=100℃
Ta=25℃
100
Ta=-40℃
10
1
10
0.6
0.8
IC/IB=10
Ta=-40℃
Ta=25℃
1
Ta=100℃
0.1
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT IC(mA)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
Ta=25℃
VCE=20V
100
50
0
-10
EMITTER CURRENT IE(mA)
1
10
100
150
-1
0.4
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-100
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VCE(sat)(mV)
COLLECTOR TO EMITTER SATURATION
VOLTAGE VS. COLLECTOR CURRENT
0.1
0.2
BASE TO EMITTER VOLTAGE VBE(V)
COLLECTOR CURRENT IC(mA)
GAIN BAND WIDTH PRODUCT fT(MHz)
Ta=-40℃
20
Ta=25℃
f=1MHz
IE=0
10
0
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
100
<SMALL-SIGNAL TRANSISTOR>
INC6005AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
COLLECTOR DISSIPATION
VS. AMBIENT TEMPERATURE
COLLECTOR DISSIPATION PC (W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
100
150
200
AMBIENT TEMPERATURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2013
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