ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 40.68MHz Characteristics: • Low Cost Common Source RF Package. Output Power = 150 Watts. • Low Vth thermal coefficient. Gain = 13dB (Class AB) • Low Thermal Resistance. Efficiency = 75% (Class C) • Optimized SOA for Superior Ruggedness • RoHS Compliant Maximum Ratings Symbol All Ratings: TC =25°C unless otherwise specified Parameter ARF460AG/BG VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 Continuous Drain Current @ TC = 25°C 14 ID Unit V A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W Junction to Case 0.50 °C/W RθJC TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 150 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) VDS(ON) On State Drain Voltage 1 Typ Max 500 (ID(ON) = 7A, VGS = 10V) 4 Unit V Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 7A) 3.3 8 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts IDSS 5.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com μA 050-5966 Rev E 10-2007 Symbol Dynamic Characteristics Symbol ARF460AG/BG Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Min Typ Max VGS = 0V 1200 1400 VDS = 150V 150 180 f = 1MHz 60 75 VGS = 15V 7 Unit pF VDD = 0.5VDSS 6 ID =ID[Cont.] @ 25°C 20 RG = 1.6Ω 4.0 7 Min Typ Max f = 40.68MHz 13 15 dB Idq = 50mA VDD = 125V 70 75 % ns Functional Characteristics Symbol Characteristic GPS Test Conditions Common Source Amplifier Power Gain η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 POUT = 150W Unit No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5000 Ciss CAPACITANCE (pf) 1000 Coss 500 Crss 100 50 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 050-5966 Rev E 10-2007 12 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 4 TJ = +125°C 56 → → ← TJ = -55°C TJ = +25°C → 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 16 OPERATION HERE LIMITED BY R (ON) DS 10 ← 100uS ← 1mS 5 ← 10mS 1 ← 100mS ← DC .5 .1 TC =+25°C TJ =+150°C SINGLE PULSE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF460AG/BG 25 1.2 VGS=15 & 10V ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) → 1.1 1.0 0.9 0.8 20 8V 15 7V 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 6.5V 6V 5 0 0.7 -50 -25 9V 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.50 0.9 0.40 0.30 0.20 0.10 0 10-5 0.7 0.5 0.3 0.1 0.05 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (Watts) 0.0284 0.00155F 0.165 0.00934F 0.307 0.128F Case temperature Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) ZOL (Ω) 2.0 20.9 - j 9.2 38 - j 2.6 13.5 2.4 - j 6.8 31 - j 14 27 .57 - j 2.6 19.6 - j 17.6 40 .31 - j 0.5 12.5 - j 15.8 65 .44 - j 1.9 6.0 - j 10.5 ZIN - Gate shunted with 25Ω Idq = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V 050-5966 Rev E 10-2007 Z JC, THERMAL IMPEDANCE (°C/W) q 0.60 ARF460AG/BG L4 Bias 0 - 12V + - L3 C6 RF Input C2 C3 + 125V - C8 C7 R1 C9 L1 L2 R2 C1 C5 C4 DUT 40.68 MHz Test Circuit C1 -- 2000 pF 100V NPO chip mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 μF 500V ceramic chip C9 -- 2200 pF 500V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 6t #16 AWG .312" ID .4"L ~185nH L3 -- 15t #24 AWG .25"ID ~.85uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF460A/B TO-247 Package Outline 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF- A ARF- B Gate ------- Drain Source ---- Source Drain ------- Gate 050-5966 Rev E 10-2007 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.