BUZ 344 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 344 100 V 50 A 0.035 Ω TO-218 AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 ˚C Values Unit A 50 IDpuls Pulsed drain current TC = 25 ˚C 200 Avalanche current,limited by Tjmax IAR 50 Avalanche energy,periodic limited by Tjmax EAR 18.5 Avalanche energy, single pulse EAS mJ ID = 50 A, VDD = 25 V, RGS = 25 Ω L = 240 µH, Tj = 25 ˚C 400 Gate source voltage VGS Power dissipation Ptot TC = 25 ˚C ± 20 W 170 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.74 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 Data Sheet V 55 / 150 / 56 1 05.99 BUZ 344 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 100 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 100 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 32 A Data Sheet nA - 2 0.03 0.035 05.99 BUZ 344 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs S VDS≥ 2 * ID * RDS(on)max, ID = 32 A Input capacitance 15 - 2400 3200 - 730 1100 - 430 650 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance 28 td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 33 50 - 140 210 - 500 670 - 230 310 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Data Sheet 3 05.99 BUZ 344 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 ˚C Inverse diode direct current,pulsed - 200 V 1.6 1.8 trr ns - 170 - Qrr µC VR = 30 V, IF=lS, diF/dt = 100 A/µs Data Sheet - - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge 50 VSD VGS = 0 V, IF = 100 A Reverse recovery time - ISM TC = 25 ˚C Inverse diode forward voltage - - 4 0.9 - 05.99 BUZ 344 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 55 180 A W Ptot ID 140 45 40 120 35 100 30 25 80 20 60 15 40 10 20 0 0 5 20 40 60 80 100 120 ˚C 0 0 160 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 0 A K/W tp = 3.1µs ID ZthJC 10 µs / D I 10 -1 DS 10 2 V DS (o n) = 100 µs R 1 ms D = 0.50 0.20 10 ms 10 1 10 -2 0.10 0.05 0.02 single pulse 0.01 DC 10 0 0 10 10 1 V 10 10 -3 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 05.99 BUZ 344 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 120 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0.11 Ptot = 170W A l k Ω j i VGS [V] a 4.0 g 90 80 b 4.5 c 5.0 f d 5.5 e 6.0 f 6.5 g 7.0 70 e 60 d 50 40 c c d e f g h 7.5 i 8.0 j 9.0 0.09 RDS (on) 0.08 0.07 0.06 0.05 l i 0.04 j 0.03 20.0 k l 0.02 b 20 h k 10.0 30 VGS [V] = a 10 0 0.0 b h 100 ID a 1.0 2.0 3.0 4.0 5.0 6.0 0.01 V 0.00 0 8.0 a 4.0 b 4.5 c 5.0 d 5.5 20 e f 6.0 6.5 40 g 7.0 60 h i 7.5 8.0 80 VDS j 9.0 k l 10.0 20.0 A 110 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 75 34 A S 65 ID 28 60 gfs 55 24 50 45 20 40 16 35 30 12 25 20 8 15 10 5 0 0 4 1 2 3 4 5 6 7 8 V 0 0 10 VGS Data Sheet 10 20 30 40 50 A 70 ID 6 05.99 BUZ 344 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 32 A, VGS = 10 V 0.11 4.6 Ω V 98% 4.0 0.09 RDS (on) VGS(th) 0.08 3.6 typ 3.2 0.07 2.8 0.06 2.4 0.05 2.0 98% typ 0.04 1.6 0.03 1.2 0.02 0.8 0.01 0.4 0.00 -60 -20 20 2% 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A IF Ciss C 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 10 0 0.0 40 Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS 7 05.99 BUZ 344 Avalanche energy EAS = ƒ(Tj) parameter: ID = 50 A, VDD = 25 V RGS = 25 Ω, L = 240 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 75 A 450 16 mJ V EAS 350 VGS 12 300 10 0,2 VDS max 0,8 VDS max 250 8 200 6 150 4 100 2 50 0 20 40 60 80 100 120 ˚C 0 0 160 Tj 40 80 120 160 200 240 280 320 nC 380 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99