Diodes MMDT3946LP4 Complementary npn / pnp surface mount transistor Datasheet

MMDT3946LP4
COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
NEW PRODUCT
Features
•
•
•
•
•
Complementary Pair: One 3904 (NPN) and One 3906 (PNP)
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free by Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
DFN1310H4-6
Dim
Min
Max
Typ
A
1.25
1.38
1.30
B
0.95
1.08
1.00
C
0.20
0.30
0.25
D*
-
-
0.10
E**
-
-
0.20
G
-
0.40
-
H
0
0.05
0.02
K*
0.10
0.20
0.15
L*
0.30
0.50
0.40
M**
-
-
0.35
A
N*
-
-
0.25
Bottom View
Z**
-
-
0.05
Top View
Mechanical Data
•
•
•
•
•
•
G
Case: DFN1310H4-6
Case Material: Molded Plastic. “Green Molding”
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – NiPdAu over Copper leadframe (Lead
Free Plating) Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 4
C2 B1
Ordering Information: See Page 4
H
Side View
K
Z
R0 .1
E1
50
L
L
E
B
N
D
D
E2 B2 C1
Internal Schematic
N
M
C
Z
(TOP VIEW)
All Dimensions in mm
E1, B1, C1 = PNP3906 Section
E2, B2, C2 = NPN3904 Section
Maximum Ratings, NPN 3904 Section
Characteristic
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current – Continuous
IC
200
mA
Power Dissipation (Notes 3, 4)
Pd
200
mW
RθJA
625
°C/W
Thermal Resistance, Junction to Ambient (Note 3)
Maximum Ratings, PNP 3906 Section
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-200
mA
Pd
200
mW
RθJA
625
°C/W
Collector Current - Continuous (Note 1)
Power Dissipation (Notes 3, 4)
Thermal Resistance, Junction to Ambient (Note 3)
Notes:
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB.
Maximum combined dissipation.
DS30822 Rev. 4 - 2
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MMDT3946LP
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NEW PRODUCT
Electrical Characteristics, NPN 3904 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
60
40
6.0
⎯
⎯
⎯
⎯
⎯
50
50
V
V
V
nA
nA
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.20
0.30
V
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
0.85
0.95
V
Cobo
⎯
4.0
pF
Current Gain-Bandwidth Product
fT
300
⎯
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
⎯
⎯
⎯
⎯
35
35
200
50
ns
ns
ns
ns
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Electrical Characteristics, PNP 3906 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
⎯
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
-40
-40
-5.0
⎯
⎯
⎯
⎯
⎯
-50
-50
V
V
V
nA
nA
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.25
-0.40
V
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
⎯
-0.85
-0.95
V
Cobo
⎯
4.5
pF
Current Gain-Bandwidth Product
fT
250
⎯
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
⎯
⎯
⎯
⎯
35
35
225
75
ns
ns
ns
ns
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
5.
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
@TA = 25°C unless otherwise specified
Symbol
DC Current Gain
Test Condition
⎯
Test Condition
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Short duration test pulse used to minimize self-heating effect.
DS30822 Rev. 4 - 2
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PD, POWER DISSIPATION (mW)
200
f = 1MHz
150
100
50
0
0
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device) (Note 3)
25
Fig. 2, Typical Output Capacitance
Characteristics (NPN-3904)
1
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1,000
hFE, DC CURRENT GAIN
T A = 125°C
100
TA = -25°C
TA = +25°C
10
IC
IB = 10
0.1
VCE = 1.0V
1
0.1
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
NEW PRODUCT
250
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current (NPN-3904)
0.01
0.1
1,000
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
10
f = 1MHz
IC
IB = 10
1
0.1
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current (NPN-3904)
DS30822 Rev. 4 - 2
Fig. 6, Typical Output Capacitance
Characteristics (PNP-3906)
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1,000
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
10
NEW PRODUCT
hFE, DC CURRENT GAIN
TA = 125°C
100
TA = -25°C
TA = +25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7, Typical DC Current Gain vs
Collector Current (PNP-3906)
6.
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8, Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
IC
IB = 10
IC, COLLECTOR CURRENT (mA)
Fig. 9, Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-3906)
Ordering Information
Notes:
0.01
1
1,000
(Note 6)
Device
Packaging
Shipping
MMDT3946LP4-7
DFN1310H4-6
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
46
DS30822 Rev. 4 - 2
46= Product Type Marking Code
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MMDT3946LP
© Diodes Incorporated
NEW PRODUCT
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30822 Rev. 4 - 2
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MMDT3946LP
© Diodes Incorporated
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