TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF2030, 35, 40, 45, 50CT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage MBRF20 MBRF20 30CT 35CT 40CT MBRF20 45CT MBR F2 0 50CT 30 35 40 45 50 V 21 24.5 28 31.5 35 V 20 A 150 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ IO IFSM PD RΘJA Average rectified output current MBRF20 Unit Non-Repetitive peak forward surge current 8.3ms half sine wave A,Nov,2010 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Symbol V(BR) IR VF Device Test conditions Min MBRF2030CT 30 MBRF2035CT 35 MBRF2040CT IR=0.1mA 45 MBRF2050CT 50 VR=30V MBRF2035CT VR=35V MBRF2040CT VR=40V MBRF2045CT VR=45V MBRF2050CT VR=50V MBRF2030-45CT Ctot* MBRF2030-50CT Unit V 0.1 0.7 IF=10A MBRF2050CT Typical total capacitance Max 40 MBRF2045CT MBRF2030CT Typ mA V 0.8 VR=4V,f=1MHz 650 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. A,Nov,2010