AP65SL600AH
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
700V
RDS(ON)
0.6Ω
ID
G
▼ RoHS Compliant & Halogen-Free
VDS @ Tj,max.
7A
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
.
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Rating
Units
650
V
+20
V
3
7
A
3
4.4
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
18
A
dv/dt
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
50
V/ns
PD@TC=25℃
Total Power Dissipation
62.5
W
PD@TA=25℃
Total Power Dissipation
2
W
36.7
mJ
15
V/ns
5
Single Pulse Avalanche Energy
EAS
6
dv/dt
Peak Diode Recovery dv/dt
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
4
Value
Units
2
℃/W
62.5
℃/W
1
201505201
AP65SL600AH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
650
-
-
V
VGS=10V, ID=2A
-
-
0.6
Ω
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=2A
-
20
32
nC
Qgs
Gate-Source Charge
VDS=480V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
8
-
ns
tr
Rise Time
ID=2A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
28
-
ns
tf
Fall Time
VGS=10V
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1184
pF
Coss
Output Capacitance
VDS=100V
Crss
Rg
-
28
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
2
-
pF
Gate Resistance
f=1.0MHz
-
3.8
7.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2A, VGS=0V
-
0.8
-
V
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
280
-
ns
Qrr
Reverse Recovery Charge
dI/dt=50A/µs
-
1.8
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Surface mounted on 1 in2 copper pad of FR4 board
5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP65SL600AH
16
8
o
10V
9.0V
8.0V
7.0V
T C =150 C
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
o
10V
9.0V
8.0V
12
7.0V
8
4
6
0.37Ω
V G =6.0V
4
2
V G =6.0V
0
0
0
8
16
24
32
0
4
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
20
24
Fig 2. Typical Output Characteristics
580
4
I D =2A
V G =10V
I D =2A
o
540
520
.
Normalized RDS(ON)
T C =25 C
560
RDS(ON) (mΩ)
12
V DS , Drain-to-Source Voltage (V)
3
2
500
1
480
0
460
5
6
7
8
9
-100
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I D =250uA
1.6
IS (A)
Normalized VGS(th)
6
4
T j = 150 o C
T j = 25 o C
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP65SL600AH
f=1.0MHz
12
10000
I D =2A
V DS =480V
1000
C iss
0.37Ω
8
100
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
C rss
10
4
1
2
0
0.1
0
8
16
24
32
0
100
200
Q G , Total Gate Charge (nC)
300
400
500
600
700
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
ID (A)
Operation in this area
limited by RDS(ON)
10us
100us
1
1ms
10ms
100ms
1s
DC 1000
o
T C =25 C
Single Pulse
0.1
1
10
100
.
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
2
80
1.6
Normalized BVDSS
PD , Power Dissipation (W)
I D =1mA
60
40
1.2
0.8
20
0.4
0
0
0
50
100
150
o
T C , Case Temperature ( C )
Fig 11. Total Power Dissipation
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP65SL600AH
MARKING INFORMATION
Part Number
65SL600A
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5