AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Information Product Description Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested. 1800 – 2400 MHz 26 dB Gain +30 dBm P1dB +46 dBm Output IP3 +5V Single Positive Supply Internal Active Bias Vcc1 1 Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out AH212-S8G Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power @ -45 dBc ACLR Operating Current Range , Icc Stage 1 Amp Current, Icc1 Stage 2 Amp Current, Icc2 Device Voltage, Vcc 12 Vcc1 N/C 2 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 9 Vcc2 / RF Out N/C 5 8 N/C Vbias2 6 7 N/C AH212-EG Specifications (1) Parameters Vbias1 1 such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply. Mobile Infrastructure WiBro Infrastructure TD-SCDMA 5 N/C Vbias2 4 Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies Applications 8 N/C Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dB 22.2 +29 +43.5 dBm mA mA mA V Typ 1800 Max Parameters 2400 Frequency Gain (3) Input Return Loss Output Return Loss Output P1dB (3) Output IP3 IS-95A Channel Power 2140 25 25 9 +29.5 +46 6.0 @ -45 dBc ACPR W-CDMA Channel Power @ -45 dBc ACLR +21 340 400 85 315 5 Units 500 Noise Figure Supply Bias Typical MHz dB dB dB dBm dBm 1960 25.8 15 11 +30 +48.5 dBm +23.5 dBm dB 2140 25 25 9 +29.5 +46 +21 5.5 6.0 +5 V @ 400 mA 3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25ºC. The AH212-EG in a 4x5 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB. 1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Ordering Information Parameter Rating Part No. Description Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 C -65 to +150 C +26 dBm +7 V 900 mA 5W +250 ºC AH212-S8G 1 Watt, High Gain InGaP HBT Amplifier AH212-EG 1 Watt, High Gain InGaP HBT Amplifier AH212-S8PCB1960 AH212-S8PCB2140 AH212-EPCB1960 AH212-EPCB2140 1960 MHz Evaluation Board 2140 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board (lead-free/green/RoHS-compliant SOIC-8 package) (lead-free/green/RoHS-compliant 12-pin 4x5mm DFN package) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information Typical Device Data (SOIC-8) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) 0. 4 3. 1.0 0.8 0 2. 0 2. 0 4 30 Swp Max 3GHz 6 0. 0.8 6 0. Swp Max 3GHz 0. DB(|S(2,1)|) AH212 S22 1.0 S11 Gain 35 3. 0 0 4. 0.2 0 5. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 20 0.2 10.0 0 Gain (dB) 0 4. 0 5. 0 .2 25 15 -10.0 -4 .0 -5 .0 - -0 .6 - S(2,2) AH212 0 2. .4 0 2. Swp Min 0.01GHz -1.0 S(1,1) AH212 -0 Swp Min 0.01GHz -1.0 .4 3 -0.8 2.5 -0 .6 2 -0.8 0 1.5 Frequency (GHz) -3 . 1 0 0.5 -3 . -0 0 2 -0. -4 .0 -5 .0 5 -10.0 2 -0. 10 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44 -130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11 17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51 65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98 -64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27 122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70 -2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34 -145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitor – C7. The markers and vias are spaced in 0.050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information AH212-S8 1850 MHz Reference Design Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) (+15 dBm / tone, 1 MHz spacing) Vcc = +5 V 1800 26.4 10.5 15.5 +30.5 1850 26.2 12 15 +30.5 1900 26.2 12.5 13 +30 +47.5 +47.5 +48.5 Noise Figure (dB) Device / Supply Voltage Quiescent Current 5.8 5.8 +5 V 400 mA CAP ID=C9 C=47 pF IND ID=L1 L=18 nH RES ID=R2 R=0 Ohm CAP ID=C1 C=47 pF PORT P=1 Z=50 Ohm 5.9 CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C2 C=47 pF IND ID=L2 L=18 nH Size 0805 CAP ID=C8 C=47 pF 8 1 5 2 NET="AH212" 7 6 3 67 4 58 TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm All passive components are of size 0603 unless otherwise noted. CAP ID=C4 C=1000 pF PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 10 degrees at 1.85GHz away from pins 6 and 7. VBC = +5 V S21 vs. Frequency S11 vs. Frequency 28 0 27 -5 S11 (dB) S21 (dB) +25°C 26 25 24 +85°C -10 -15 -20 +25°C 23 1800 -40°C 1820 -40°C 1840 +85°C 1860 1880 -25 1800 1900 1820 1840 1860 Frequency (MHz) Frequency (MHz) S22 vs. Frequency OIP3 vs. Frequency 0 1880 1900 1880 1900 +25° C, +15 dBm/tone 55 OIP3 (dBm) S22 (dB) -5 -10 -15 45 40 -20 +25°C -25 1800 50 1820 1840 -40°C 1860 Frequency (MHz) +85°C 1880 1900 35 1800 1820 1840 1860 Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Vcc = +5 V 1960 MHz 25.8 dB 15 dB 11 dB +30 dBm Channel Power +23.5 dBm (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current CAP ID=C9 C=47 pF IND ID=L1 L=18 nH RES ID=R2 R=0 Ohm PORT P=1 Z=50 Ohm CAP ID=C2 C=47 pF CAP ID=C1 C=47 pF IND ID=L2 L=18 nH Size 0805 CAP ID=C8 C=47 pF 85 1 2 5.5 dB +5 V 400 mA CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF +48.5 dBm (+15 dBm / tone, 1 MHz spacing) CAP ID=C11 C=4.7E6 pF SIZE 1210 NET="AH212" 76 3 67 4 58 RES ID=R3 R=75 Ohm All passive components are of size 0603 unless otherwise noted. CAP ID=C4 C=1000 pF PORT P=2 Z=50 Ohm TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz RES ID=R1 R=10 Ohm CAP ID=C 7 C=2.7 pF C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 14 degrees at 1.96GHz away from pins 6 and 7. VBC = +5 V S21 vs. Frequency S11 vs. Frequency 28 0 27 -5 25 24 +25°C 23 1930 1940 -40°C 1950 -10 -15 1960 1970 1980 1990 -20 -20 -25 1930 -25 1930 1940 1990 45 35 -15 28 1940 1950 +25°C 1960 1970 Frequency(MHz) 10 35 Temperature (°C) 60 85 12 13 1980 -40 6 -45 5 4 3 +85°C -40°C 1990 2 1930 +25°C 14 15 16 Output Power (dBm) 17 18 ACPR vs. Channel Power 7 ACPR (dBc) NF (dB) P1dB (dBm) 29 -40°C 45 Noise Figure vs. Frequency 30 27 50 40 P1dBvs. Frequency Circuit boardsareoptimizedat 1960MHz 1950 1960 1970 1980 1990 freq. = 1960 MHz, 1961 MHz, +25° C 55 50 35 -40 +85°C OIP3 vs. Output Power freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 40 1980 -40°C Frequency (MHz) OIP3 (dBm) OIP3 (dBm) OIP3 (dBm) 40 1950 1960 1970 Frequency (MHz) 1940 OIP3 vs. Temperature 55 45 26 1930 1950 1960 1970 1980 1990 Frequency (MHz) 50 31 -15 +25°C +25° C, +15 dBm/tone 1940 -10 +85°C OIP3 vs. Frequency 35 1930 +85°C -5 Frequency (MHz) 55 -40°C S22 (dB) S11 (dB) S21 (dB) +25°C 26 S22 vs. Frequency 0 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz -50 -55 -60 -65 +85°C -40 C +25 C +85 C -70 1940 1950 1960 1970 1980 18 1990 19 20 21 22 23 24 25 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications Vcc = +5 V Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) (+15 dBm / tone, 1 MHz spacing) Channel Power (dBm) (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure (dB) Device / Supply Voltage Quiescent Current 2010 25.5 17 10.5 +30 2025 25.2 19 10 +30 +48 +47.5 +23.5 +23.5 6 CAP ID=C9 C=47 pF IND ID=L1 L=18 nH RES ID=R2 R=0 Ohm CAP ID=C2 C=47 pF CAP ID=C1 C=47 pF PORT P=1 Z=50 Ohm CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF IND ID=L2 L=18 nH Size 0805 1 8 5 2 NET="AH212" 7 6 3 6 7 4 5 8 RES ID=R1 R=10 Ohm 6 RES ID=R3 R=75 Ohm +5 V 400 mA CAP ID=C11 C=4.7E6 pF SIZE 1210 All passive components are of size 0603 unless otherwise noted. CAP ID=C4 C=1000 pF CAP ID=C8 C=47 pF TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 17 degrees at 2.01GHz away from pins 6 and 7. VBC = +5 V S21 vs. Frequency S11 vs. Frequency 28 0 27 -5 25 24 +25°C 23 2000 2005 -40°C -40°C +85°C -5 S22 (dB) S11 (dB) S21 (dB) +25°C 26 S22 vs. Frequency 0 -10 -15 -10 -15 -20 -20 -25 2000 -25 2000 +25°C +85°C 2010 2015 2020 2025 Frequency (MHz) 55 2005 2010 2015 2020 2025 2005 Frequency (MHz) 2010 -40°C 2015 +85°C 2020 2025 Frequency (MHz) OIP3 vs. Frequency ACPR vs. Channel Power +25° C, +15 dBm/tone IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 2010 MHz 50 ACPR (dBc) OIP3 (dBm) -35 45 -55 -65 40 35 2010 -45 -75 2015 2020 Frequency (MHz) 2025 19 20 21 22 23 24 Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH212-S8PCB2140) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Vcc = +5 V 2140 MHz 25 dB 25 dB 9 dB +29.5 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACLR, W-CDMA, Test model 1 +64 DPCH, ± 5MHz offset) Noise Figure Device / Supply Voltage Quiescent Current CAP ID=C9 C=47 pF IN D ID =L1 L=18 nH RES ID=R2 R=0 Ohm PORT P=1 Z=50 Ohm +21 dBm C AP ID =C 2 C =47 pF CAP ID=C1 C=47 pF 6 dB +5 V 400 mA CAP ID =C 10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF +46 dBm CAP ID=C11 C=4.7E6 pF SIZ E 1210 IND ID=L2 L=18 nH Size 0805 1 58 2 NET="AH 212" 67 3 6 7 4 85 All passive components are of size 0603 unless otherwise noted. CAP ID=C4 C=1000 pF PORT P=2 Z=50 Ohm TLINP ID=TL1 Z0=50 Ohm L=110 mil Eeff=4.6 Loss=0 F0=0 MH z RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm CAP ID =C8 C=47 pF C AP ID=C 7 C =2.4 pF C7 is placed at silkscreen marker "2" on WJ's eval board or @ 12.2 deg at 2.14GHZ away from pins 6 and 7. VBC = +5 V S21 vs. Frequency S11 vs. Frequency 27 S22 vs. Frequency 0 0 +25°C -5 26 -40°C +85°C -5 25 24 S22 (dB) S11 (dB) S21 (dB) -10 -15 -20 -10 -15 -25 23 +25°C 22 2110 2120 -40°C 2130 2140 2150 -20 -30 +85°C 2160 -35 2110 2170 +25°C 2120 Frequency (MHz) 40 2160 2170 45 45 40 -15 35 12 85 27 2120 2130 +25°C 2140 2150 Frequency (MHz) 2160 6 5 -40°C 2170 3 2110 17 18 ACLR vs. Channel Power 4 +85°C 14 15 16 Output Power (dBm) 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz ACLR (dBc) 28 -40°C 13 -40 7 NF (dB) P1dB (dBm) 60 8 29 25 2110 10 35 Temperature (°C) Noise Figure vs. Frequency Circuit boards are optimized at 2140 MHz 26 freq. =2140MHz, 2141MHz, +25° C 55 50 P1dB vs. Frequency 30 2130 2140 2150 2160 2170 OIP3vs. Output Power freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 50 35 -40 +85°C Frequency (MHz) 40 2130 2140 2150 Frequency (MHz) -40°C OIP3 (dBm) OIP3 (dBm) OIP3 (dBm) 55 45 2120 2120 OIP3 vs. Temperature +25° C, +15 dBm/tone 50 35 2110 2130 2140 2150 2160 2170 Frequency (MHz) OIP3 vs. Frequency 55 -25 2110 +25°C -45 -50 -55 +85°C -40 C +25 C +85 C -60 2120 2130 2140 2150 2160 18 2170 19 20 21 22 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 6 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information AH212-S8 2350 MHz Reference Design for WiBro Applications Typical RF Performance at 25 C Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) Vcc = +5 V 2300 24.5 10 7.5 +30.4 2350 24.4 10 7 +30 2400 24.3 10 6.5 +29.6 +45 +44.3 +43.7 (+15 dBm / tone, 1 MHz spacing) Device / Supply Voltage Quiescent Current CAP ID=C9 C=22 pF IND ID=L1 L=12 nH RES ID=R2 R=0 Ohm CAP ID=C2 C=6.8 pF CAP ID=C1 C=22 pF 8 5 1 RES ID=R1 R=20 Ohm 2 NET="AH212" 7 6 3 67 4 5 8 RES ID=R3 R=75 Ohm VBC = +5 V C7 is placed at silkscreen marker "1" on WJ's eval Board or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7. S22 vs. Frequency 25 -5 -5 22 21 2300 S22 (dB) 0 S11 (dB) S21 (dB) S11 vs. Frequency 0 23 -10 -15 -20 2320 2340 2360 2380 2400 -25 2300 2320 2340 2360 2380 -25 2300 2400 2320 2340 2360 2380 2400 Frequency (MHz) P1dB vs. Frequency +25° C, +15 dBm/tone 31 30 50 P1dB (dBm) OIP3 (dBm) -15 Frequency (MHz) OIP3 vs. Frequency 45 40 35 2300 -10 -20 Frequency (MHz) 55 PORT P=2 Z=50 Ohm CAP ID=C4 C=1000 pF 26 24 IND ID=L2 L=15 nH Size 0805 CAP ID=C8 C=22 pF CAP ID=C7 C=2.2 pF CAP ID=C12 C=1.5 pF C12 is placed at silkscreen marker "A" on WJ's eval Board or @ 4.2 degrees at 2.35 GHz away from pin 3. S21 vs. Frequency CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF PORT P=1 Z=50 Ohm +5 V 400 mA CAP ID=C11 C=4.7E6 pF SIZE 1210 All passive components are of size 0603 unless otherwise noted. 29 28 27 2320 2340 2360 Frequency (MHz) 2380 2400 26 2300 2320 2340 2360 2380 2400 Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 7 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information Typical Device Data (DFN 4x5 mm) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) 1.0 0.8 2. 0 2. 0 0. 4 3. Swp Max 3GHz 6 0. 0.8 6 0. Swp Max 3GHz 0. 4 DB(|S(2,1)|) AH212 30 S22 1.0 S11 Gain 35 0 3. 0 0 4. 0.2 0 5. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 20 0.2 10.0 0 Gain (dB) 0 4. 0 5. 0.2 25 15 -10.0 -4 .0 -5 .0 S(2,2) AH212 - Swp Min 0.01GHz -1.0 - Swp Min 0.01GHz 0 2. .4 0 2. -0 -0 .6 S(1,1) AH212 .4 -1.0 3 -0.8 2.5 -0 .6 2 -0.8 0 1.5 Frequency (GHz) -3 . 1 0 0.5 -3 . -0 0 2 -0. -4 .0 -5 .0 5 -10.0 2 -0. 10 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -10.92 -3.48 -0.12 -2.58 -3.56 -8.55 -12.30 -5.21 -4.42 -5.81 -9.68 -22.03 -13.88 -7.86 -5.27 -4.10 -3.60 -112.71 -121.92 -168.99 163.93 147.73 125.39 -155.14 -171.47 164.06 140.51 118.60 121.72 -133.74 -148.71 -164.02 -176.86 174.71 14.75 22.90 27.45 26.41 25.52 28.69 29.61 28.43 26.63 25.16 23.77 22.15 20.27 18.12 16.09 14.35 12.79 95.57 70.25 14.93 -53.73 -62.82 -95.79 -147.37 167.21 132.05 99.97 67.69 34.69 2.51 -28.03 -56.46 -85.23 -117.50 -73.98 -70.46 -67.96 -60.92 -59.17 -54.90 -55.92 -55.39 -56.48 -57.72 -60.00 -60.00 -55.39 -50.75 -48.64 -47.96 -47.13 47.38 9.54 94.09 47.82 67.34 49.69 32.50 23.93 3.83 -6.10 -86.34 -166.62 157.88 130.86 115.31 96.72 90.37 -2.62 -2.87 -2.87 -1.39 -1.19 -1.51 -1.54 -1.50 -1.61 -1.61 -1.58 -1.43 -1.39 -1.27 -1.27 -1.27 -1.24 -143.22 -160.44 -166.36 -168.43 -177.07 179.99 179.91 177.74 175.61 173.57 171.97 169.44 166.52 162.89 159.59 156.84 154.34 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitor – C7. The markers and vias are spaced in 0.050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 8 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information 1960 MHz Application Circuit (AH212-EPCB1960) Typical RF Performance at 25 C Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 1960 MHz 27 dB 16 dB 10 dB +30.5 dBm +46.5 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +24.5 dBm (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current 5.5 dB +5 V 400 mA S21 vs. Frequency S11 vs. Frequency 30 +25°C -40°C 0 +85°C +25°C -40°C +85°C 28 27 -5 S22 (dB) -5 S11 (dB) 29 S21 (dB) S22 vs. Frequency 0 -10 -15 -10 -15 26 -20 -20 25 1930 -25 1930 -25 1930 +25°C 1940 1950 1960 1970 1980 1990 1940 Frequency (MHz) 1960 1970 1980 1990 Supply Bias vs. Temperature OIP3 vs. Output Power 410 390 350 50 45 60 85 50 45 13 14 15 16 Output Power (dBm) 17 18 -40 -15 Noise Figure vs. Frequency Circuit boards are optimized at 1960 MHz 1990 35 12 P1dB vs. Frequency 31 1980 40 35 10 35 Temperature (°C) 1970 OIP3 vs. Temperature 40 370 1960 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 55 OIP3 (dBm) OIP3 (dBm) 430 -15 1950 +85°C Frequency (MHz) freq. = 1960 MHz, 1961 MHz, +25° C 55 -40 1940 Frequency (MHz) 450 OIP3 (dBm) 1950 -40°C 10 35 Temperature (°C) 60 85 ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz 7 -35 NF (dB) P1dB (dBm) 29 28 27 26 1930 -40°C 1940 1950 +25°C 1960 1970 Frequency (MHz) 5 4 -40°C 1990 2 1900 -45 -55 -65 3 +85°C 1980 ACPR (dBc) 6 30 +25°C +85°C -40 C +25 C +85 C -75 1920 1940 1960 1980 18 2000 19 20 21 22 23 24 25 26 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 9 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information 2140 MHz Application Circuit (AH212-EPCB2140) Typical RF Performance at 25 C FreFrequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 2140 MHz 25.5 dB 24 dB 9 dB +30.5 dBm +46 dBm (+15 dBm / tone, 1 MHz spacing) Channel Power +22 dBm (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current 6 dB +5 V 400 mA S21 vs. Frequency S11 vs. Frequency 28 0 27 -5 25 24 +25°C 23 2110 -40°C 2120 2130 -5 -15 -20 -20 -30 2110 -25 2110 +25°C 2140 2150 2160 2170 2120 2130 2140 2150 2160 2170 390 350 50 45 85 13 17 18 2120 2130 +25°C 2140 2150 Frequency (MHz) -15 2160 5 -40°C 2170 85 ACLR vs. Channel Power 6 3 2110 60 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz 4 +85°C 10 35 Temperature (°C) -40 ACLR (dBc) NF (dB) 28 -40°C 45 -40 7 29 26 2110 14 15 16 Output Power (dBm) 8 30 27 50 Noise Figure vs. Frequency Circuit boards are optimized at 2140 MHz 2170 35 12 P1dB vs. Frequency 31 2160 40 35 60 2150 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 55 40 370 2140 +85°C OIP3 vs. Temperature freq. = 2140 MHz, 2141 MHz, +25° C OIP3 (dBm) OIP3 (dBm) 410 2130 -40°C Frequency (MHz) OIP3 vs. Output Power 430 10 35 Temperature (°C) 2120 Frequency (MHz) 55 -15 -15 -25 Supply Bias vs. Temperature -40 -10 +85°C 450 OIP3 (dBm) +85°C -10 Frequency (MHz) P1dB (dBm) -40°C S22 (dB) S11 (dB) S21 (dB) +25°C 26 S22 vs. Frequency 0 +25°C -45 -50 -55 +85°C -40 C +25 C +85 C -60 2120 2130 2140 2150 2160 18 2170 19 20 21 22 23 24 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 10 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH212G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Mounting Configuration / Land Pattern Functional Pin Layout Vcc1 1 Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85C 33 C / W 156 C Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out Vbias2 4 Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tj is a function of the voltage and the current applied. It can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature. 8 N/C 5 N/C Function Pin No. Vcc1 Input Output/ Vcc2 Vbias1 Vbias2 GND N/C or GND 1 3 6, 7 2 4 Backside Paddle 5, 8 Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 11 of 12 August 2006 AH212 The Communications Edge TM 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information AH212-EG (Lead-Free DFN 4x5 mm Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is Matte Tin. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH212-EG” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. AH212-EG ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 C 33 C / W 156 C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case. temperature of 85 C. Tj is a function of the voltage and the current applied. It can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature. Functional Pin Layout Vbias1 1 N/C 2 12 Vcc1 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 9 Vcc2 / RF Out N/C 5 8 N/C Vbias2 6 7 N/C Function Pin No. Vcc1 Input Output /Vcc2 Vbias1 Vbias2 GND N/C or GND 12 3 9, 10 1 6 Backside Paddle 2, 4, 5, 7, 8, 11 Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 12 of 12 August 2006