IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1 fastandsoftantiparalleldiode IKW75N65EH5 650VDuoPackIGBTandfull-rateddiode Highspeedseriesfifthgeneration Datasheet IndustrialPowerControl IKW75N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Uninterruptiblepowersupplies •Solarconverters •Weldingconverters •Midtohighrangeswitchingfrequencyconverters 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IKW75N65EH5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 75A 1.65V 175°C K75EEH5 PG-TO247-3 2 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 90.0 75.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 300.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 300.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 90.0 75.0 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 300.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 395.0 198.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.38 K/W Diode thermal resistance, junction - case Rth(j-c) 0.45 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 1) Defined by design. Not subject to production test. 4 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - VGE=15.0V,IC=75.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - - 1.35 1.33 1.30 1.70 - 3.2 4.0 4.8 V 1.0 75.0 3000.0 - µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=75.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=75.0A - 104.0 - S V ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4200 - - 130 - - 17 - - 160.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=75.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 28 - ns - 33 - ns - 174 - ns - 41 - ns - 2.30 - mJ - 0.90 - mJ - 3.20 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets - 25 - ns - 14 - ns - 178 - ns - 15 - ns - 0.90 - mJ - 0.30 - mJ - 1.20 - mJ Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 92 - ns - 1.33 - µC - 20.5 - A - -600 - A/µs Tvj=25°C, VR=400V, IF=37.5A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 59 - ns - 1.00 - µC - 25.8 - A - -1750 - A/µs Tvj=25°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=20pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 27 - ns - 34 - ns - 194 - ns - 38 - ns - 3.00 - mJ - 1.00 - mJ - 4.00 - mJ - 25 - ns - 16 - ns - 207 - ns - 18 - ns - 1.80 - mJ - 0.40 - mJ - 2.20 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=75.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=37.5A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=8.0Ω, Lσ=30nH,Cσ=20pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Tvj=150°C, VR=400V, IF=75.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 123 - ns - 3.70 - µC - 43.8 - A - -2000 - A/µs Tvj=150°C, VR=400V, IF=37.5A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 108 - ns - 2.70 - µC - 38.7 - A - -1050 - A/µs 7 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 100 400 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 350 10 1 300 250 200 150 100 50 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 100 300 90 270 18V 80 240 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE = 20V 70 60 50 40 30 12V 210 180 6V 30 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 4V 90 10 50 7V 120 60 25 8V 150 20 0 10V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 8 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 300 300 270 17V 270 240 15V 240 12V 210 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE = 19V 10V 180 7V 7V 150 6V 120 5V 90 210 180 150 120 90 60 60 30 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 Tvj = 25°C Tvj = 150°C 3 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) 5 6 7 8 9 10 Figure 6. Typicaltransfercharacteristic (VCE=20V) 3.5 1000 IC = 37.5A IC = 75A IC = 150A 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4 VGE,GATE-EMITTERVOLTAGE[V] 2.5 2.0 1.5 100 10 1.0 0.5 td(off) tf td(on) tr 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) 9 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 100 10 td(off) tf td(on) tr 10 5 15 25 35 45 55 65 75 1 85 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=75A,dynamictestcircuitin Figure E) 100 125 150 175 20 typ. min. max. 5.5 Eoff Eon Ets 18 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 16 14 12 10 8 6 4 2 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 200 225 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.75mA) 10 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=8Ω,dynamic test circuit in Figure E) Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 14 5.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 12 Eoff Eon Ets 4.5 10 8 6 4 4.0 3.5 3.0 2.5 2.0 1.5 1.0 2 0.5 0 5 15 25 35 45 55 65 75 0.0 85 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=75A,dynamictestcircuitin Figure E) 100 125 150 175 16 Eoff Eon Ets VCE = 130V VCE = 520V 14 4.5 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 5.5 5.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 4.0 3.5 3.0 2.5 2.0 1.5 12 10 8 6 4 1.0 2 0.5 0.0 200 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=75A,RG(on)=8Ω,RG(off)=8Ω,dynamictest circuit in Figure E) 0 20 40 60 80 100 120 140 160 180 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=75A) 11 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration C,CAPACITANCE[pF] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres 1E+4 1000 100 10 0 5 10 15 20 25 D = 0.5 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3 τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237 0.001 1E-6 30 0.2 1E-5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) Tvj = 25°C, IF = 75A Tvj = 150°C, IF = 75A 180 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 200 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1E-5 1E-4 0.001 0.01 140 120 100 80 60 40 20 i: 1 2 3 4 5 6 7 ri[K/W]: 3.1E-4 0.014345 0.094354 0.098809 0.228276 0.019674 2.0E-3 τi[s]: 5.0E-6 2.7E-5 2.2E-4 2.2E-3 0.012472 0.102908 1.856405 0.001 1E-6 160 0 500 0.1 tp,PULSEWIDTH[s] 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 20. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 5.0 80 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 4.5 90 Tvj = 25°C, IF = 75A Tvj = 150°C, IF = 75A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 70 60 50 40 30 20 10 0.5 0.0 500 Tvj = 25°C, IF = 75A Tvj = 150°C, IF = 75A 700 900 1100 1300 0 500 1500 700 900 1100 1300 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 0 150 140 dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] -500 120 IF,FORWARDCURRENT[A] -1500 -2000 -2500 -3000 -3500 -4000 -4500 110 100 90 80 70 60 50 40 30 Tvj = 25°C, IF = 75A Tvj = 150°C, IF = 75A 20 -5500 -6000 500 Tvj = 25°C Tvj = 150°C 130 -1000 -5000 1500 10 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration 2.50 IF = 35A IF = 75A IF = 150A VF,FORWARDVOLTAGE[V] 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 14 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration Package Drawing PG-TO247-3 15 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 16 Rev.2.1,2015-05-20 IKW75N65EH5 Highspeedseriesfifthgeneration RevisionHistory IKW75N65EH5 Revision:2015-05-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-05-20 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 17 Rev.2.1,2015-05-20