PHILIPS BU1506DX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
VBE = 0 V
3.0
1.6
0.25
1500
700
5
8
32
5.0
2.0
0.5
V
V
A
A
W
V
A
V
µs
PINNING - SOT186A
PIN
Ths ≤ 25 ˚C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICM = 3.0 A; IB(end) = 0.67 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
b
Rbe
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-40
-
1500
700
5
8
3
8
100
8
32
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
4.0
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
September 1997
1
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
90
7.5
700
13.5
-
180
-
mA
V
V
3.8
-
55
12
5.5
1.6
5.0
1.1
7.5
2.0
Ω
V
V
TYP.
MAX.
UNIT
47
-
pF
4.5
0.25
6.0
0.5
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Rbe
VCEsat
VBEsat
hFE
hFE
VF
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 7.5 V
IC = 3.0 A; IB = 0.79 A
IC = 3.0 A; IB = 0.79 A
IC = 0.3 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
IF = 3.0 A
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
Switching times (line deflection
circuit)
ICM = 3.0 A; LC = 1.35 mH;
CFB = 9.4 nF; IB(end) = 0.67 A;
LB = 8 µH; -VBB = 4 V;
(-dIB/dt = 0.45 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU1506DX
100
h FE
DIODE
Tj = 25 C
Tj = 125 C
t
5V
IBend
IB
10
t
20us
26us
1V
64us
VCE
1
0.01
t
Fig.1. Switching times waveforms.
0.1
IC / A
1
10
Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
ICsat
1.2
90 %
VBESAT / V
Tj = 25 C
Tj = 125 C
1.1
IC
1
0.9
10 %
tf
0.8
t
ts
IC/IB =
3
4
5
0.7
IB
IBend
0.6
t
0.5
0.4
- IBM
Fig.2. Switching times definitions.
0.1
1
IC / A
10
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
+ 150 v nominal
adjust for ICsat
1
VCESAT / V
IC/IB =
5
4
3
0.9
0.8
0.7
Lc
0.6
0.5
LB
IBend
Tj = 25 C
Tj = 125 C
0.4
D.U.T.
0.3
Cfb
0.2
-VBB
0.1
Rbe
0
Fig.3. Switching times test circuit.
September 1997
0.1
1
IC / A
10
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
3
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
VBESAT / V
1.2
ts, tf / us
10
Tj = 25 C
Tj = 125 C
1.1
ts
9
8
7
1
6
0.9
5
IC =
4A
3A
2.5A
0.8
0.7
4
IC =
3
2
2.5A
3A
tf
1
0.6
0
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
1
120
Normalised Power Derating
PD%
with heatsink compound
110
100
90
Tj = 25 C
Tj = 125 C
IC = 2.5A
3A
4A
10
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
VCESAT / V
10
0.1
80
70
60
1
50
40
30
20
10
0
0
0.1
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
20
40
60
80
Ths / C
100
120
140
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Ths)
Eoff / uJ
1000
IC = 3A
2.5A
100
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC
September 1997
4
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
IC / A
IC / A
100
100
= 0.01
= 0.01
ICM max
tp =
10
IC max
tp =
ICM max
10
10 us
10 us
IC max
II
II
1
1
Ptot max
Ptot max
100 us
100 us
1 ms
1 ms
I
I
0.1
0.1
10 ms
10 ms
DC
DC
0.01
0.01
1
10
100
1000
1
VCE / V
100
1000
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
September 1997
10
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
5
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.300
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.300
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