2Gb DDR3 SDRAM
2Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TQ2G43CFR-xxC
H5TQ2G83CFR-xxC
* Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 1.0/ Apr. 2013
1
Revision History
Revision No.
History
Draft Date
Remark
0.01
Preliminary version release
Nov. 2010
Preliminary
0.1
Added IDD Specification
Aug. 2011
0.2
JEDEC Update
Feb. 2012
1.0
Editorial PKG Dimension
Apr. 2013
Rev. 1.0 / Apr. 2013
2
Description
The H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density
and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both
rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges
of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both
rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very
high bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• 8banks
• Fully differential clock inputs (CK, CK) operation
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
• Differential Data Strobe (DQS, DQS)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• JEDEC standard 78ball FBGA(x4/x8)
• DM masks write data-in at the both rising and falling
edges of the data strobe
• Driver strength selected by EMRS
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Asynchronous RESET pin supported
• Dynamic On Die Termination supported
• ZQ calibration supported
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
and 14 supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Programmable additive latency 0, CL-1, and CL-2
supported
• 8 bit pre-fetch
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9,
10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• Write Levelization supported
• This product in compliance with the RoHS directive.
• BL switch on the fly
Rev. 1.0 / Apr. 2013
3
ORDERING INFORMATION
Part No.
Configuration
H5TQ2G43CFR-*xxC
512M x 4
H5TQ2G83CFR-*xxC
256M x 8
Package
78ball FBGA
* xx means Speed Bin Grade
OPERATING FREQUENCY
Frequency [MHz]
Grade
Remark
CL5
CL6
CL7
CL8
-G7
667
800
1066
1066
-H9
667
800
1066
-PB
667
800
-RD
-TE
Rev. 1.0 / Apr. 2013
CL9
CL10
CL11
CL12
CL13
1066
1333
1333
1066
1066
1333
1333
1600
800
1066
1066
1333
1333
1600
1866
800
1066
1066
1333
1333
1600
1866
CL14
2133
4
Package Ballout/Mechanical Dimension
x4 Package Ball out (Top view): 78ball FBGA Package
1
2
3
4
5
6
7
8
9
A
VSS
VDD
NC
NF
VSS
VDD
A
B
VSS
VSSQ
DQ0
DM
VSSQ
VDDQ
B
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
C
D
VSSQ
NF
DQS
VDD
VSS
VSSQ
D
E
VREFDQ
VDDQ
NF
NF
NF
VDDQ
E
F
NC
VSS
RAS
CK
VSS
NC
F
G
ODT
VDD
CAS
CK
VDD
CKE
G
H
NC
CS
WE
A10/AP
ZQ
NC
H
J
VSS
BA0
BA2
NC
VREFCA
VSS
J
K
VDD
A3
A0
A12/BC
BA1
VDD
K
L
VSS
A5
A2
A1
A4
VSS
L
M
VDD
A7
A9
A11
A6
VDD
M
N
VSS
RESET
A13
A14
A8
VSS
N
1
2
3
7
8
9
4
5
6
Note: NF (No Function) - This is applied to balls only used in x4 configuration.
1 2 3
7 8 9
A
B
C
D
E
F
G
H
(Top View: See the balls through the Package)
Populated ball
Ball not populated
J
K
L
M
N
Rev. 1.0 / Apr. 2013
5
x8 Package Ball out (Top view): 78ball FBGA Package
1
2
3
4
5
6
7
8
9
A
VSS
VDD
NC
NF/TDQS
VSS
VDD
A
B
VSS
VSSQ
DQ0
DM/TDQS
VSSQ
VDDQ
B
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
C
D
VSSQ
DQ6
DQS
VDD
VSS
VSSQ
D
E
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
E
F
NC
VSS
RAS
CK
VSS
NC
F
G
ODT
VDD
CAS
CK
VDD
CKE
G
H
NC
CS
WE
A10/AP
ZQ
NC
H
J
VSS
BA0
BA2
NC
VREFCA
VSS
J
K
VDD
A3
A0
A12/BC
BA1
VDD
K
L
VSS
A5
A2
A1
A4
VSS
L
M
VDD
A7
A9
A11
A6
VDD
M
N
VSS
RESET
A13
A14
A8
VSS
N
1
2
3
7
8
9
1 2 3
4
5
6
7 8 9
A
B
C
D
E
F
G
H
(Top View: See the balls through the Package)
Populated ball
Ball not populated
J
K
L
M
N
Rev. 1.0 / Apr. 2013
6
Pin Functional Description
Symbol
Type
Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK.
CKE, (CKE0),
(CKE1)
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and
device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down
and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any
bank).
CKE is asynchronous for Self-Refresh exit. After VREFCA and VREFDQ have become stable
during the power on and initialization sequence, they must be maintained during all
operations (including Self-Refresh). CKE must be maintained high throughout read and
write accesses. Input buffers, excluding CK, CK, ODT and CKE, are disabled during powerdown. Input buffers, excluding CKE, are disabled during Self-Refresh.
CS, (CS0),
(CS1), (CS2),
(CS3)
Input
Chip Select: All commands are masked when CS is registered HIGH.
CS provides for external Rank selection on systems with multiple Ranks.
CS is considered part of the command code.
ODT, (ODT0),
(ODT1)
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the
DDR3 SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS,
NU/TDQS (When TDQS is enabled via Mode Register A11=1 in MR1) signal for x4/x8
configurations.
RAS.
CAS. WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM, (DMU),
(DML)
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH coincident with that input data during a Write access. DM is sampled
on both edges of DQS. For x8 device, the function of DM or TDQS/TDQS is enabled by
Mode Register A11 setting in MR1.
BA0 - BA2
Input
Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge
command is being applied. Bank address also determines if the mode register or extended
mode register is to be accessed during a MRS cycle.
Input
Address Inputs: Provide the row address for Active commands and the column address for
Read/Write commands to select one location out of the memory array in the respective
bank. (A10/AP and A12/BC have additional functions, see below).
The address inputs also provide the op-code during Mode Register Set commands.
A10 / AP
Input
Auto-precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write operation.
(HIGH: Autoprecharge; LOW: no Autoprecharge).A10 is sampled during a Precharge
command to determine whether the Precharge applies to one bank (A10 LOW) or all
banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank
addresses.
A12 / BC
Input
Burst Chop: A12 / BC is sampled during Read and Write commands to determine if burst
chop (on-the-fly) will be performed.
(HIGH, no burst chop; LOW: burst chopped). See command truth table for details.
A0 - A15
Rev. 1.0 / Apr. 2013
7
Symbol
Type
Function
Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when
RESET is HIGH. RESET must be HIGH during normal operation.
RESET is a CMOS rail-to-rail signal with DC high and low at 80% and 20% of VDD, i.e.
1.20V for DC high and 0.30V for DC low.
RESET
Input
DQ
Input /
Output
Data Input/ Output: Bi-directional data bus.
Input /
Output
Data Strobe: output with read data, input with write data. Edge-aligned with read data,
centered in write data. The data strobe DQS, DQSL, and DQSU are paired with differential
signals DQS, DQSL, and DQSU, respectively, to provide differential pair signaling to the
system during reads and writes. DDR3 SDRAM supports differential data strobe only and
does not support single-ended.
Output
Termination Data Strobe: TDQS/TDQS is applicable for x8 DRAMs only. When enabled via
Mode Register A11 = 1 in MR1, the DRAM will enable the same termination resistance
function on TDQS/TDQS that is applied to DQS/DQS. When disabled via mode register A11
= 0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used. x4
DRAMs must disable the TDQS function via mode register A11 = 0 in MR1.
DQU, DQL,
DQS, DQS,
DQSU, DQSU,
DQSL, DQSL
TDQS, TDQS
NC
No Connect: No internal electrical connection is present.
NF
No Function
VDDQ
Supply
DQ Power Supply: 1.5 V +/- 0.075 V
VSSQ
Supply
DQ Ground
VDD
Supply
Power Supply: 1.5 V +/- 0.075 V
VSS
Supply
Ground
VREFDQ
Supply
Reference voltage for DQ
VREFCA
Supply
Reference voltage for CA
ZQ
Supply
Reference Pin for ZQ calibration
Note:
Input only pins (BA0-BA2, A0-A15, RAS, CAS, WE, CS, CKE, ODT, DM, and RESET) do not supply termination.
Rev. 1.0 / Apr. 2013
8
ROW AND COLUMN ADDRESS TABLE
2Gb
Configuration
# of Banks
Bank Address
Auto precharge
BL switch on the fly
Row Address
Column Address
Page size 1
512Mb x 4
256Mb x 8
8
BA0 - BA2
A10/AP
A12/BC
A0 - A14
A0 - A9,A11
1 KB
8
BA0 - BA2
A10/AP
A12/BC
A0 - A14
A0 - A9
1 KB
Note1: Page size is the number of bytes of data delivered from the array to the internal sense amplifiers
when an ACTIVE command is registered. Page size is per bank, calculated as follows:
page size = 2 COLBITS * ORG 8
where COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits
Rev. 1.0 / Apr. 2013
9
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.80 V
V
1,3
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.80 V
V
1,3
- 0.4 V ~ 1.80 V
V
1
-55 to +100
oC
1, 2
VIN, VOUT Voltage on any pin relative to Vss
TSTG
Storage Temperature
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Temperature Range
Symbol
TOPER
Parameter
Rating
Units
Notes
Normal Operating Temperature Range
0 to 85
oC
1,2
Extended Temperature Range (Optional)
85 to 95
oC
1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is
also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the
Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b).
DDR3 SDRAMs support Extended Temperature Range and please refer to component datasheet and/or the
DIMM SPD for tFEFI requirements in the Extended Temperature Range.
Rev. 1.0 / Apr. 2013
10
AC & DC Operating Conditions
Recommended DC Operating Conditions
Recommended DC Operating Conditions
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
1.575
V
1,2
1.575
V
1,2
Min.
Typ.
Max.
Supply Voltage
1.425
1.500
Supply Voltage for Output
1.425
1.500
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Rev. 1.0 / Apr. 2013
11
IDD and IDDQ Specification Parameters and Test Conditions
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure
1. shows the setup and test load for IDD and IDDQ measurements.
•
IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R,
IDD4W, IDD5B, IDD6, IDD6ET and IDD7) are measured as time-averaged currents with all VDD balls
of the DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
•
IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all
VDDQ balls of the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR3 SDRAM. They can
be used to support correlation of simulated IO power to actual IO power as outlined in Figure 2. In
DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are using one
merged-power layer in Module PCB.
For IDD and IDDQ measurements, the following definitions apply:
•
”0” and “LOW” is defined as VIN <= VILAC(max).
•
”1” and “HIGH” is defined as VIN >= VIHAC(max).
•
“MID_LEVEL” is defined as inputs are VREF = VDD/2.
•
Timing used for IDD and IDDQ Measurement-Loop Patterns are provided in Table 1.
•
Basic IDD and IDDQ Measurement Conditions are described in Table 2.
•
Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 3 through Table 10.
•
IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting
RON = RZQ/7 (34 Ohm in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ohm in MR1);
RTT_Wr = RZQ/2 (120 Ohm in MR2);
TDQS Feature disabled in MR1
•
Attention: The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time
before actual IDD or IDDQ measurement is started.
•
Define D = {CS, RAS, CAS, WE}:= {HIGH, LOW, LOW, LOW}
•
Define D = {CS, RAS, CAS, WE}:= {HIGH, HIGH, HIGH, HIGH}
Rev. 1.0 / Apr. 2013
12
IDDQ (optional)
IDD
VDD
VDDQ
RESET
CK/CK
DDR3
SDRAM
CKE
CS
RAS, CAS, WE
DQS, DQS
DQ, DM,
TDQS, TDQS
A, BA
ODT
ZQ
VSS
RTT = 25 Ohm
VDDQ/2
VSSQ
Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above]
Application specific
memory channel
environment
IDDQ
Test Load
Channel
IO Power
Simulation
IDDQ
Simulation
IDDQ
Simulation
Correction
Channel IO Power
Number
Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported
by IDDQ Measurement
Rev. 1.0 / Apr. 2013
13
Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
Symbol
tCK
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
DDR3-2133
7-7-7
9-9-9
11-11-11
13-13-13
14-14-14
1.875
1.5
1.25
1.071
0.938
Unit
ns
CL
7
9
11
13
14
nCK
nRCD
7
9
11
13
14
nCK
nRC
27
33
39
45
50
nCK
nRAS
20
24
28
32
36
nCK
nRP
7
9
11
13
14
nCK
1KB page size
20
20
24
26
27
nCK
2KB page size
27
30
32
33
38
nCK
1KB page size
4
4
5
5
6
nCK
nFAW
nRRD
6
5
6
6
7
nCK
nRFC -512Mb
2KB page size
48
60
72
85
97
nCK
nRFC-1 Gb
59
74
88
103
118
nCK
nRFC- 2 Gb
86
107
128
150
172
nCK
nRFC- 4 Gb
139
174
208
243
279
nCK
nRFC- 8 Gb
187
234
280
328
375
nCK
Table 2 -Basic IDD and IDDQ Measurement Conditions
Symbol
Description
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT
IDD0
and PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO:
MID-LEVEL; DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see
Table 3); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 3.
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between
IDD1
ACT, RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to
Table 4; DM: stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table
4); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 4.
Rev. 1.0 / Apr. 2013
14
Symbol
Description
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2N
Bank Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable
at 0; Pattern Details: see Table 5.
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2NT
Bank Address Inputs: partially toggling according to Table 6; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: toggling according to Table 6; Pattern Details: see Table 6.
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2P0
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down
Mode: Slow Exitc)
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2P1
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down
Mode: Fast Exitc)
Precharge Quiet Standby Current
IDD2Q
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Active Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD3N
Bank Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable
at 0; Pattern Details: see Table 5.
Rev. 1.0 / Apr. 2013
15
Symbol
Description
Active Power-Down Current
IDD3P
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks open;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Command,
IDD4R
Address, Bank Address Inputs: partially toggling according to Table 7; Data IO: seamless read data burst
with different data between one burst and the next one according to Table 7; DM: stable at 0; Bank
Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...(see Table 7); Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 7.
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between WR; Command,
IDD4W
Address, Bank Address Inputs: partially toggling according to Table 8; Data IO: seamless read data burst
with different data between one burst and the next one according to Table 8; DM: stable at 0; Bank
Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,...(see Table 8); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at HIGH; Pattern Details: see Table 8.
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 1; BL: 8a); AL: 0; CS: High between REF; Com-
IDD5B
mand, Address, Bank Address Inputs: partially toggling according to Table 9; Data IO: MID_LEVEL; DM:
stable at 0; Bank Activity: REF command every nREF (see Table 9); Output Buffer and RTT: Enabled in
Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 9.
Self-Refresh Current: Normal Temperature Range
TCASE: 0 - 85 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Normale);
IDD6
CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address,
Bank Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Self-Refresh Current: Extended Temperature Range (optional)f)
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): ExtendIDD6ET
ede); CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command,
Address, Bank Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal:
MID_LEVEL
Rev. 1.0 / Apr. 2013
16
Symbol
Description
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a), f); AL: CL1; CS: High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling accord-
IDD7
ing to Table 10; Data IO: read data burst with different data between one burst and the next one
according to Table 10; DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0,
1,...7) with different addressing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb);
ODT Signal: stable at 0; Pattern Details: see Table 10.
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;
RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable
e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature range
f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 1.0 / Apr. 2013
17
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
0
-
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 3 - IDD0 Measurement-Loop Patterna)
0
3,4
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
1*nRC+1, 2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
1*nRC+3, 4
D, D
1
1
1
1
0
0
00
0
0
F
0
-
0
-
...
1*nRC+nRAS
0
0
1
1
0
0
00
0
repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
...
repeat pattern 1...4 until 2*nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
F
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Apr. 2013
18
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
00000000
0
0
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 4 - IDD1 Measurement-Loop Patterna)
0
3,4
...
nRCD
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRCD - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
0
0
1
1
0
0
00
0
0
F
0
-
1*nRC+1,2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
D, D
1
1
1
1
0
0
00
0
0
F
0
-
1*nRC+3,4
...
1*nRC+nRCD
...
1*nRC+nRAS
repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
F
...
repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
0
-
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID_LEVEL.
Rev. 1.0 / Apr. 2013
19
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 5 - IDD2N and IDD3N Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
8-11
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
12-15
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
16-19
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
20-23
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
24-17
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
28-31
repeat Sub-Loop 0, use BA[2:0] = 7 instead
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
2
8-11
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2
3
12-15
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3
4
16-19
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
5
20-23
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
6
24-17
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6
7
28-31
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Apr. 2013
20
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
RD
0
1
0
1
0
0
00
0
0
0
0
00000000
1
D
1
0
0
0
0
0
00
0
0
0
0
-
2,3
D,D
1
1
1
1
0
0
00
0
0
0
0
-
4
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
D
1
0
0
0
0
0
00
0
0
F
0
-
D,D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 7 - IDD4R and IDDQ4R Measurement-Loop Patterna)
0
Static High
toggling
5
6,7
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Apr. 2013
21
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
WR
0
1
0
0
1
0
00
0
0
0
0
00000000
1
D
1
0
0
0
1
0
00
0
0
0
0
-
2,3
D,D
1
1
1
1
1
0
00
0
0
0
0
-
4
WR
0
1
0
0
1
0
00
0
0
F
0
00110011
D
1
0
0
0
1
0
00
0
0
F
0
-
D,D
1
1
1
1
1
0
00
0
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 8 - IDD4W Measurement-Loop Patterna)
0
Static High
toggling
5
6,7
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
REF
0
0
0
1
0
0
0
0
0
0
0
-
1
1.2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
3,4
D, D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
0
Sub-Loop
CKE
Datab)
Static High
toggling
CK, CK
Table 9 - IDD5B Measurement-Loop Patterna)
2
5...8
repeat cycles 1...4, but BA[2:0] = 1
9...12
repeat cycles 1...4, but BA[2:0] = 2
13...16
repeat cycles 1...4, but BA[2:0] = 3
17...20
repeat cycles 1...4, but BA[2:0] = 4
21...24
repeat cycles 1...4, but BA[2:0] = 5
25...28
repeat cycles 1...4, but BA[2:0] = 6
29...32
repeat cycles 1...4, but BA[2:0] = 7
33...nRFC-1
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Apr. 2013
22
Table 10 - IDD7 Measurement-Loop Patterna)
0
1
2
3
4
Static High
5
6
7
8
toggling
9
10
0
1
2
...
nRRD
nRRD+1
nRRD+2
...
2*nRRD
3*nRRD
4*nRRD
nFAW
nFAW+nRRD
nFAW+2*nRRD
nFAW+3*nRRD
nFAW+4*nRRD
2*nFAW+0
2*nFAW+1
2&nFAW+2
11
2*nFAW+nRRD
2*nFAW+nRRD+1
2&nFAW+nRRD+
2
12
13
2*nFAW+2*nRRD
2*nFAW+3*nRRD
14
2*nFAW+4*nRRD
15
16
17
18
3*nFAW
3*nFAW+nRRD
3*nFAW+2*nRRD
3*nFAW+3*nRRD
19
3*nFAW+4*nRRD
A[2:0]
A[6:3]
A[9:7]
A[10]
A[15:11]
BA[2:0]
ODT
WE
CAS
RAS
CS
Command
Cycle
Number
Sub-Loop
CKE
CK, CK
ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9
ACT
0
0
1
1
0
0
00
0
0
0
0
RDA
0
1
0
1
0
0
00
1
0
0
0
D
1
0
0
0
0
0
00
0
0
0
0
repeat above D Command until nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
F
0
RDA
0
1
0
1
0
1
00
1
0
F
0
D
1
0
0
0
0
1
00
0
0
F
0
repeat above D Command until 2* nRRD - 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 1, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
F
0
Assert and repeat above D Command until nFAW - 1, if necessary
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 1, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 1, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
F
0
Assert and repeat above D Command until 2* nFAW - 1, if necessary
ACT
0
0
1
1
0
0
00
0
0
F
0
RDA
0
1
0
1
0
0
00
1
0
F
0
D
1
0
0
0
0
0
00
0
0
F
0
Repeat above D Command until 2* nFAW + nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
0
0
RDA
0
1
0
1
0
1
00
1
0
0
0
D
1
0
0
0
0
1
00
0
0
0
0
Repeat above D Command until 2* nFAW + 2* nRRD - 1
repeat Sub-Loop 10, but BA[2:0] = 2
repeat Sub-Loop 11, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
0
0
Assert and repeat above D Command until 3* nFAW - 1, if necessary
repeat Sub-Loop 10, but BA[2:0] = 4
repeat Sub-Loop 11, but BA[2:0] = 5
repeat Sub-Loop 10, but BA[2:0] = 6
repeat Sub-Loop 11, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
0
0
Assert and repeat above D Command until 4* nFAW - 1, if necessary
Datab)
00000000
00110011
-
-
00110011
00000000
-
-
-
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Apr. 2013
23
IDD Specifications
IDD values are for full operating range of voltage and temperature unless otherwise noted.
IDD Specification
Speed Grade
Bin
DDR3 - 1066 DDR3 - 1333 DDR3 - 1600 DDR3 - 1866 DDR3 - 2133
7-7-7
9-9-9
11-11-11
13-13-13
14-14-14
Unit
Symbol
Max.
Max.
Max.
Max.
Max.
IDD0
40
40
45
45
TBD
mA
IDD01
50
50
55
60
TBD
mA
IDD2P0
12
12
12
12
TBD
mA
IDD2P1
15
15
15
17
TBD
mA
IDD2N
20
20
25
25
TBD
mA
IDD2NT
25
25
30
30
TBD
mA
IDD2Q
20
23
23
25
TBD
mA
IDD3P
15
15
17
18
TBD
mA
IDD3N
25
27
30
30
TBD
mA
IDD4R
75
90
105
125
TBD
mA
IDD4w
75
85
95
120
TBD
mA
IDD5B
110
115
120
120
TBD
mA
Notes
IDD6
12
12
12
12
TBD
mA
1
IDD6ET
14
14
14
14
TBD
mA
2
IDD7
145
180
185
200
TBD
mA
Notes:
1. Applicable for MR2 settings A6=0 and A7=0. Temperature range for IDD6 is 0 - 85oC.
2. Applicable for MR2 settings A6=0 and A7=1. Temperature range for IDD6ET is 0 - 95oC.
Rev. 1.0 / Apr. 2013
24
Input/Output Capacitance
Parameter
Symbol
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133
Min
Input/output capacitance
CIO
1.4
(DQ, DM, DQS, DQS,
TDQS, TDQS)
Input capacitance, CK and
CCK
0.8
CK
Input capacitance delta
CDCK
0
CK and CK
Input capacitance delta,
CDDQS
0
DQS and DQS
Input capacitance
CI
0.75
(All other input-only pins)
Input capacitance delta
CDI_CTR
-0.5
(All CTRL input-only pins)
L
Input capacitance delta
CDI_ADD
(All ADD/CMD input-only
-0.5
_CMD
pins)
Input/output capacitance
CDIO
-0.5
delta
(DQ, DM, DQS, DQS)
Input/output capacitance
CZQ
of ZQ pin
Notes:
Units Notes
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
3.0
1.4
2.7
1.4
2.5
1.4
2.3
1.4
2.2
1.4
2.1
pF
1,2,3
1.6
0.8
1.6
0.8
1.4
0.8
1.4
0.8
1.3
0.8
1.3
pF
2,3
0.15
0
0.15
0
0.15
0
0.15
0
0.15
0
0.15
pF
2,3,4
0.20
0
0.20
0
0.15
0
0.15
0
0.15
0
0.15
pF
2,3,5
1.4
0.75
1.35
0.75
1.3
0.75
1.3
0.75
1.2
0.75
1.2
pF
2,3,6
0.3
-0.5
0.3
-0.4
0.2
-0.4
0.2
-0.4
0.2
-0.4
0.2
pF
2,3,7,8
0.5
-0.5
0.5
-0.4
0.4
-0.4
0.4
-0.4
0.4
-0.4
0.4
pF
2,3,9,10
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
-0.5
0.3
pF
2,3,11
3
-
3
-
3
-
3
-
3
-
3
pF
2,3,12
1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS.
2. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is measured according
to JEP147(“PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER(VNA)”) with VDD, VDDQ,
VSS,VSSQ applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary). VDD=VDDQ=1.5V,
VBIAS=VDD/2 and on-die termination off.
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value of CCK-CCK.
5. Absolute value of CIO(DQS)-CIO(DQS).
6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.
7. CDI_CTR applies to ODT, CS and CKE.
8. CDI_CTRL=CI(CNTL) - 0.5 * CI(CLK) + CI(CLK))
9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE.
10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))
11. CDIO=CIO(DQ) - 0.5*(CIO(DQS)+CIO(DQS))
12. Maximum external load capacitance an ZQ pin: 5 pF.
Rev. 1.0 / Apr. 2013
25
Standard Speed Bins
DDR3L SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-800E
CL - nRCD - nRP
6-6-6
Unit
Notes
Parameter
Symbol
min
max
Internal read command to first data
tAA
15
20
ns
ACT to internal read or write delay time
tRCD
15
—
ns
PRE command period
tRP
15
—
ns
ACT to ACT or REF command period
tRC
52.5
—
ns
ACT to PRE command period
tRAS
37.5
9 * tREFI
ns
CWL = 5
tCK(AVG)
3.0
3.3
ns
1,2,3,4,12,13
CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3
Supported CL Settings
5, 6
nCK
13
Supported CWL Settings
5
nCK
CL = 5
CL = 6
Rev. 1.0 / Apr. 2013
26
DDR3-1066 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-1066F
CL - nRCD - nRP
Parameter
Symbol
Unit
7-7-7
min
max
Note
Internal read command to
first data
tAA
13.125
20
ns
ACT to internal read or
write delay time
tRCD
13.125
—
ns
PRE command period
tRP
13.125
—
ns
ACT to ACT or REF
command period
tRC
50.625
—
ns
ACT to PRE command
period
tRAS
37.5
9 * tREFI
ns
CWL = 5
tCK(AVG)
3.0
3.3
ns
1,2 3 4,6,12,13
CWL = 6
tCK(AVG)
ns
4
CWL = 5
tCK(AVG)
ns
1,2,3,6
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1,2,3,4
CWL = 5
tCK(AVG)
ns
4
CWL = 6
tCK(AVG)
ns
1,2,3
13
CL = 5
CL = 6
CL = 7
CL = 8
Reserved
2.5
3.3
1.875
< 2.5
Reserved
1.875
< 2.5
Supported CL Settings
5, 6, 7, 8
nCK
Supported CWL Settings
5, 6
nCK
Rev. 1.0 / Apr. 2013
27
DDR3-1333 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-1333H
CL - nRCD - nRP
Parameter
Symbol
Unit
9-9-9
min
max
Note
Internal read
command to first data
tAA
13.5
(13.125)5,11
20
ns
ACT to internal read or
write delay time
tRCD
13.5
(13.125)5,11
—
ns
PRE command period
tRP
13.5
(13.125)5,11
—
ns
ACT to ACT or REF
command period
tRC
49.5
(49.125)5,11
—
ns
ACT to PRE command
period
tRAS
36
9 * tREFI
ns
CWL = 5
tCK(AVG)
3.0
3.3
ns
1,2,3,4,7,12,13
CWL = 6, 7
tCK(AVG)
ns
4
CWL = 5
tCK(AVG)
ns
1,2,3,7
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1,2,3,4,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1,2,3,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4
CWL = 5, 6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
ns
1,2,3,4
CWL = 5, 6
tCK(AVG)
ns
4
CWL = 7
tCK(AVG)
(Optional)
ns
ns
1,2,3
5
Supported CL Settings
5, 6, 7, 8, 9, 10
nCK
Supported CWL Settings
5, 6, 7
nCK
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
Rev. 1.0 / Apr. 2013
Reserved
2.5
3.3
1.875
< 2.5
5,11
(Optional)
1.875
< 2.5
1.5
<1.875
Reserved
1.5
<1.875
28
DDR3-1600 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-1600K
CL - nRCD - nRP
Parameter
Symbol
Unit
11-11-11
min
max
Internal read
command to first data
tAA
13.75
(13.125)5,11
20
ns
ACT to internal read or
write delay time
tRCD
13.75
(13.125)5,11
—
ns
PRE command period
tRP
13.75
(13.125)5,11
—
ns
ACT to ACT or REF
command period
tRC
48.75
(48.125)5,11
—
ns
ACT to PRE command
period
tRAS
35
9 * tREFI
ns
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
3.0
3.3
ns
CL = 5
CWL = 5
CWL = 6, 7
CWL = 5
CL = 6
CWL = 6
CWL = 7
CWL = 5
CL = 7
CWL = 6
tCK(AVG)
CWL = 7
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
CWL = 8
CWL = 5
CL = 8
CWL = 6
CWL = 7
CWL = 8
CWL = 5, 6
CL = 9
CWL = 7
tCK(AVG)
tCK(AVG)
CWL = 5, 6 tCK(AVG)
tCK(AVG)
CL = 10 CWL = 7
tCK(AVG)
CWL = 8
CWL = 5, 6,7 tCK(AVG)
CL = 11
tCK(AVG)
CWL = 8
Reserved
4
ns
1,2,3,8
Reserved
ns
1,2,3,4,8
Reserved
ns
4
ns
4
3.3
Reserved
1.875
< 2.5
(Optional)5,11
Reserved
ns
1,2,3,4,8
ns
1,2,3,4,8
Reserved
ns
4
Reserved
ns
4
1.875
ns
1,2,3,8
Reserved
< 2.5
ns
1,2,3,4,8
Reserved
ns
1,2,3,4
ns
4
ns
1,2,3,4,8
ns
1,2,3,4
Reserved
1.5
<1.875
(Optional)5,11
Reserved
Reserved
ns
4
ns
1,2,3,8
Reserved
ns
1,2,3,4
Reserved
ns
4
ns
1,2,3
1.5
<1.875
1.25
<1.5
Supported CL Settings
5, 6, 7, 8, 9, 10, 11
Supported CWL Settings
5, 6, 7, 8
Rev. 1.0 / Apr. 2013
1,2,3,4,8,12, 13
ns
2.5
CWL = 8
Note
nCK
nCK
29
DDR3-1866 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-1866M
CL - nRCD - nRP
Parameter
Symbol
Internal read command
to first data
tAA
ACT to internal read or
write delay time
tRCD
PRE command period
tRP
ACT to PRE command
period
tRAS
ACT to ACT or PRE
command period
tRC
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
CL = 12
CL = 13
tCK(AVG)
CWL = 6,7,8,9 tCK(AVG)
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
CWL = 7,8,9 tCK(AVG)
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
CWL = 7,8,9 tCK(AVG)
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8,9
tCK(AVG)
CWL = 5, 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 9
tCK(AVG)
CWL = 5, 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
CWL = 5,6,7 tCK(AVG)
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 9
CWL = 5,6,7,8 tCK(AVG)
tCK(AVG)
CWL = 9
CWL = 5,6,7,8 tCK(AVG)
tCK(AVG)
CWL = 9
Unit
13-13-13
min
13.91
max
20
ns
—
ns
—
ns
9 * tREFI
ns
-
ns
(13.125)5,14
13.91
(13.125)5,14
13.91
(13.125)5,14
34
47.91
(47.125)5,14
Reserved
CWL = 5
ns
Reserved
1,2,3,4,9
ns
4
ns
1,2,3,9
Reserved
ns
1,2,3,4,9
Reserved
ns
4
2.5
3.3
Reserved
ns
4
ns
1,2,3,4,9
Reserved
ns
4
Reserved
ns
4
ns
1,2,3,9
Reserved
ns
1,2,3,4,9
Reserved
ns
4
1.875
< 2.5
1.875
< 2.5
Reserved
ns
4
ns
1,2,3,4,9
Reserved
ns
1,2,3,4,9
Reserved
ns
4
1.5
<1.875
Reserved
ns
4
ns
1,2,3,9
Reserved
ns
1,2,3,4,9
Reserved
ns
4
ns
1,2,3,4,9
ns
1,2,3,4
1.5
<1.875
1.25
<1.5
Reserved
Reserved
ns
4
Reserved
ns
1,2,3,4
Reserved
1.07
<1.25
Supported CL Settings
6, 7, 8, 9, 10, 11, 13
Supported CWL Settings
5, 6, 7, 8, 9
Rev. 1.0 / Apr. 2013
Note
ns
4
ns
1, 2, 3
nCK
nCK
30
DDR3-2133 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 32.
Speed Bin
DDR3-2133N
CL - nRCD - nRP
Parameter
Symbol
Internal read command to
tAA
first data
ACT to internal read or write
tRCD
delay time
tRP
PRE command period
t
ACT to PRE command period
RAS
ACT to ACT or PRE
tRC
command period
tCK(AVG)
CWL = 5
CL = 5
CWL = 6,7,8,9,10 tCK(AVG)
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
CL = 6
tCK(AVG)
CWL = 7,8,910
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
CL = 7
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8,9,10
tCK(AVG)
CWL = 5
tCK(AVG)
CWL = 6
CL = 8
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8,9,10
tCK(AVG)
CWL = 5, 6
tCK(AVG)
CWL = 7
CL = 9
tCK(AVG)
CWL = 8
tCK(AVG)
CWL = 9,10
tCK(AVG)
CWL = 5, 6
tCK(AVG)
CWL = 7
tCK(AVG)
CWL = 8
CL = 10
tCK(AVG)
CWL = 9
tCK(AVG)
CWL = 10
tCK(AVG)
CWL = 5,6,7
tCK(AVG)
CWL = 8
CL = 11
tCK(AVG)
CWL = 9
tCK(AVG)
CWL = 10
tCK(AVG)
CWL = 5,6,7,8
CL = 12
tCK(AVG)
CWL = 9
tCK(AVG)
CWL = 10
tCK(AVG)
CWL = 5,6,7,8
tCK(AVG)
CL = 13
CWL = 9
tCK(AVG)
CWL = 10
CWL = 5,6,7,8,9 tCK(AVG)
CL = 14
tCK(AVG)
CWL = 10
Supported CL Settings
Supported CWL Settings
14-14-14
Rev. 1.0 / Apr. 2013
Unit
min
max
13.09
20.0
ns
13.09
—
ns
13.09
33.0
—
9 * tREFI
ns
ns
46.09
-
ns
2.5
1.875
1.875
1.5
1.5
1.25
1.07
0.935
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
3.3
< 2.5
< 2.5
<1.875
<1.875
<1.5
<1.25
<1.07
6, 7, 8, 9, 10, 11, 13, 14
5, 6, 7, 8, 9, 10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
nCK
nCK
Note
1,2,3,4,10
4
1,2,3,10
1,2,3,4,10
4
4
1,2,3,10
1,2,3,4,10
4
4
1,2,3,10
1,2,3,4,10
4
4
1,2,3,10
1,2,3,4,10
4
4
1,2,3,10
1,2,3,4,10
4
4
4
1,2,3,10
1,2,3,4,10
1,2,3,4
4
1,2,3,4,10
4
4
1,2,3,10
1,2,3,4
4
1,2,3
31
Speed Bin Table Notes
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making a selection of tCK(AVG), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting.
2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guaranteed. An application should
use the next smaller JEDEC standard tCK(AVG) value (3.0, 2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] = tAA [ns] / tCK(AVG) [ns], rounding up to the next ‘Supported CL’, where tCK(AVG) =
3.0 ns should only be used for CL = 5 calculation.
3. tCK(AVG).MAX limits: Calculate tCK(AVG) = tAA.MAX / CL SELECTED and round the resulting tCK(AVG)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is
tCK(AVG).MAX corresponding to CL SELECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. ‘Optional’ settings allow certain devices in the industry to support this setting, however, it is not a mandatory feature. Refer to Hynix DIMM data sheet and/or the DIMM SPD information if and how this setting is supported.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
8. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
9. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
10. Any DDR3-2133 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization
11. Hynix DDR3 SDRAM devices supporting optional down binning to CL=7 and CL=9, and tAA/tRCD/tRP
must be 13.125 ns or lower. SPD settings must be programmed to match. For example, DDR3-1333H
devices supporting down binning to DDR3-1066F should program 13.125 ns in SPD bytes for tAAmin
(Byte 16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600K devices supporting down binning to
DDR3-1333H or DDR3-1600F should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin
(Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23)
also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125
ns) for DDR3-1333H and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3-1600K.
12. DDR3 800 AC timing apply if DRAM operates at lower than 800 MT/s data rate.
13. For CL5 support, refer to DIMM SPD information. DRAM is required to support CL5. CL5 is not mandatory in SPD coding.
14. Hynix DDR3 SDRAM devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/
tRPmin must be 13.125ns. SPD setting must be programed to match. For example, DDR3-1866
devices supporting down binning to DDR3-1600 or DDR3-1333 or 1066 should program 13.125ns in
SPD bytes for tAAmin(byte 16), tRCDmin(byte 18) and tRPmin(byte 20) is programmed to 13.125ns,
tRCmin(byte 21,23) also should be programmed accordingly. For example, 47.125ns (tRASmin + tRPmin = 34ns + 13.125ns)
Rev. 1.0 / Apr. 2013
32
Package Dimensions
Package Dimension(x4/x8): 78Ball Fine Pitch Ball Grid Array Outline
7.500 0.100
11.000 0.100
A1 INDEX MARK
0.340 0.050
1.100 0.100
TOP
SIDE
0.800 X 8 = 6.400
2.100 0.100
0.800
0.550 0.100
9
8 7
3
2
1
A1 BALL MARK
A
B
0.800
E
F
G
H
J
K
0.800 X 12 = 9.600
C
D
L
M
78 x 0.450 0.050
1.600 1.600
BOTTOM
Rev. 1.0 / Apr. 2013
0.700 0.100
N
33