isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF333 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 4.5 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ MAX UNIT 1.67 ℃/W 30 ℃/W ID Ptot Tj Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-A Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF333 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source Resistance On-stage MIN TYP MAX 350 UNIT V 2 4 V VGS= 10V; ID= 3.0A 1.5 Ω ±100 nA IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 250 uA VSD Diode Forward Voltage IF= 5.5A; VGS= 0 1.6 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 700 pF 150 pF 40 pF ·SWITCHING CHARACTERISTICS (TC=25℃) PARAMETER TYP MAX UNIT 11 17 ns 20 29 ns Turn-off Delay Time 35 56 ns Fall Time 15 24 ns SYMBOL Td(on) Tr CONDITIONS Turn-on Delay Time Rise Time MIN VDD=200V,ID=5.5A RG=12Ω Td(off) Tf isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn