Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE (27% TYPICAL) +36.0dBm TYPICAL P1dB OUTPUT POWER 8.5dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314A-4P SYMBOLS PARAMETERS/TEST CONDITIONS P1dB UNIT MIN TYP Output Power at 1dB Compression f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss 35.0 36.0 dBm G1dB Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss 7.5 8.5 dB PAE Power Added Efficiency at 1dB compression f=13.0-14.5GHz Vds=8V, Idsq=0.5 Idss 27 % Id1dB Drain Current at 1dB Compression 1760 mA 43 dBm f=13.0-14.5GHz rd IP3 Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss f=13.0-14.5GHz Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V Vp Pinch-off Voltage Vds=3V, Ids=24mA BVgd Drain Breakdown Voltage Igd=9.6mA Rth Thermal Resistance (Au-Sn Eutectic Attach) 2200 2880 MAX 3400 mA 3000 -1.0 -13 mS -2.5 V -15 V o 4.5 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 3120mA Igsf Forward Gate Current 360mA 60mA Pin Input Power 35dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature Pt Total Power Dissipation -65/175oC 30W -65/150oC 25W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com