Excelics EIA1314A-4P 13.0-14.5ghz, 4w internally matched power fet Datasheet

Excelics
EIA1314A-4P
Not recommended for new designs. Contact factory. Effective 03/2003
13.0-14.5GHz, 4W Internally Matched Power FET
•
•
•
•
•
13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
FEATURES HIGH PAE (27% TYPICAL)
+36.0dBm TYPICAL P1dB OUTPUT POWER
8.5dB TYPICAL G1dB POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1314A-4P
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
UNIT
MIN
TYP
Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
35.0
36.0
dBm
G1dB
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
7.5
8.5
dB
PAE
Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
27
%
Id1dB
Drain Current at 1dB Compression
1760
mA
43
dBm
f=13.0-14.5GHz
rd
IP3
Output 3 Order Intercept Point
Vds=8V, Idsq=0.5 Idss
f=13.0-14.5GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=24mA
BVgd
Drain Breakdown Voltage Igd=9.6mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
2200
2880
MAX
3400
mA
3000
-1.0
-13
mS
-2.5
V
-15
V
o
4.5
C/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
3120mA
Igsf
Forward Gate Current
360mA
60mA
Pin
Input Power
35dBm
@ 3dB Compression
Tch
Channel Temperature
175oC
150oC
Tstg
Storage Temperature
Pt
Total Power Dissipation
-65/175oC
30W
-65/150oC
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
Similar pages