IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) = 300 V = 73 A Ω = 42 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 73 A IDM TC = 25°C, pulse width limited by TJM 292 A IAR TC = 25°C 73 A EAR TC = 25°C 60 mJ 2.5 J 5 V/ns 500 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ VISOL 50/60 Hz, RMS IISOL≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 300 VGS(th) VDS = VGS, ID = 4 mA 2.0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 2 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 42 mΩ © 2001 IXYS All rights reserved S G EAS dv/dt miniBLOC, SOT-227 B (IXFN) E153432 S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive -faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standard package • miniBLOC with Aluminium nitride isolation for low thermal resistance • Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) • Molding epoxies meet UL 94 V-0 flammability classification Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98742A (12/01) IXFN 73N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 47 S 6400 pF 1340 pF Crss 340 pF td(on) 37 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 ns td(off) RG = 1.0 Ω (External), 82 ns 12 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 51 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 78 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 K/W G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions Millimeter Min. Max. A B 0.05 Symbol Dim. nC 0.26 Source-Drain Diode M4 screws (4x) supplied 190 RthJC RthCK miniBLOC, SOT-227 B 73 A 292 A 1.5 V 250 ns µC A 0.8 7 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025