1,550nm Modulator Integrated DFB Laser FLD5F20NP-E FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection • Built-in optical isolator, monitor photodiode, thermistor, and thermo-electric cooler • Available at C-Band ITU-T grid wavelengths between 1529.55nm thru 1563.05nm APPLICATION This MI DFB laser is intended for long reach applications (≤80km) at 10Gb/s. DESCRIPTION The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a thermo-electric cooler. ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified) Rating Parameter Symbol Condition Storage Temperature Tstg Operating Case Temperature Unit Min. Max. - -40 +85 Top - -20 +70 °C °C Optical Output Power Pf CW - 5 mW Laser Forward Current IF CW - 150 mA Laser Reverse Voltage VR CW - 2 V Modulator Forward Voltage Vm CW -5 +1 V Photodiode Forward Current - - - 1 mA Photodiode Reverse Voltage VDR - - 10 V Cooling Heating Cooling Heating -2.5 -0.9 +2.5 +1.4 - Tth ATC Operation -20 +70 °C - 260°C - 10 sec TEC Voltage Vc TEC Current Ic Thermistor Temperature Lead Soldering Time Edition 1.3 July 2004 1 V A 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise specified) Parameter Symbol Peak Wavelength λp Threshold Current Ith Operating Current Iop Forward Voltage VF Optical Output Power (Avg. Power) Pf Dispersion Penalty dP Test Condition Min. Limits Type Max. Note (4) CW, Vm=Vo CW, IF=Iop Note (1) Unit nm - - 30 mA 40 - 100 mA - 1.4 2.0 V -2.0 - - dBm - - 2 dB SSR Note (2) 35 - - dB Wavelength Drift - after 20 years -0.1 - 0.1 nm Wavelength Stability with Case Temperature - - - - ±1.0 pm/°C Is Vo Tc=-20 to +70°C 25 35 - dB - -0.7 - 0 V Vmod (Vo-Vmod)≥-3.3V, Rext=10dB - - 2.6 V Rext IF=Iop, Vm=Vo (at On Level) Vm=Vo-Vmod (at Off Level) 10 - - dB - 20 25 ps - 20 25 ps 10 - - GHz - - ±1.0 dB Sidemode Suppression Ratio Optical Isolation On Level Modulation Modulator Drive Voltage Extinction Ratio Rise Time Tr Fall Time Tf IF=Iop,Vm=Vo, 20 to 80% -3dB bandwidth, Vm=Vo-0.5|Vmod |, IF=Iop IF=Iop, f=0.1-10GHz, Vm=Vo-0.5|Vmod | Cut-off Frequency S21 In-Band Ripple ∆G RF Return Loss S11 f=DC-5GHz, 50Ω Test Set, Vm=Vo, IF=Iop 8 - - dB RF Return Loss S11 f=5-10GHz, 50Ω Test Set, Vm=Vo, IF=Iop 5 - - dB Relative Intensity Noise RIN - -120 dB/Hz - 1.3 2.5 °C A V 9.5 10.0 3.3 10.5 W kΩ 3,270 3,450 3,630 K TEC Capacity TEC Current TEC Voltage ∆T ITEC VTEC TEC Power Dissipation Thermal Resistance PTEC Rth Thermistor B Constant (Note 3) f=10 MHz to 8.5 GHz, Vm=Vo, IF=Iop, 8% Reflection PTEC=3.3W, IF=Iop 70-Tset IF=Iop, ∆T=(70-Tset)[°C] IF=Iop, ∆T=(70-Tset)[°C] IF=Iop - B TL=25°C , Tc=+25°C Note (1) Eudyna Test System 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod) Dispersion=1600ps/nm, Dispersion penalty at Bit Error Rate = 1.0E-10 Note (2) Eudyna Test System 23 9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod) Note (3) Relation between resistance and temperature (°K) is: Rth (T) = Rth (25°C)*exp[B(1/T-1/298)] Note (4) Reference Table 1 for Wavelength Table 2 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E Fig. 1 Lasing Spectrum Relative Intensity (10 dB/div.) 10Gb/s PRBS=223-1 IF=Iop Vm=Vo/(Vo-2) Wavelength (Span=1 nm/div, Res.=0.1nm) Fig. 2 Output Power & Monitor Current vs. Forward Current Output Power, Pf (mW) Vo=-0.7V TLD=25°C 3 0.9 Im 0.6 2 Pf 1 0.3 0 0 20 40 60 80 Forward Current, IF (mA) 3 0 100 Monitor Current (mA) 1.2 4 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E Fig. 3 Extinction Ratio vs. Modulation Applied Voltage Fig. 4 Cut-off Frequency (S21) Relative Output (dB) -5 -10 -15 12 9 6 3 0 -3 -6 -9 -12 0 -20 0 0.5 1.0 1.5 2.0 2.5 5 10 15 20 Frequency, f (GHz) Modulation Applied Voltage (V) Fig. 5 RF Return Loss (S11) Fig. 6 Transmission Characteristics 0 10-4 10-5 -10 Bit Error Rate Return Loss (dB) Extinction Ratio (dB) 0 -20 -30 0 5 10 15 20 Frequency, f (GHz) TLD=25°C, ILD=90mA, Vm=-0.7V/2.0Vpp 9.95328Gb/s, PRBS=223-1, Dispersion penalty @BER=10-10 =+0.7 dB: 1600 ps/nm Back to Back After 1600 ps/nm 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -23 -22 -21 -20 -19 -18 -17 -16 Received Optical Power (dBm) 4 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E Table 1 Wavelength Table Part Number Wavelength (nm) (TL=Tset) (in vacuum) Frequency (THz) Tolerance (nm) FLD5F20NP-E60 FLD5F20NP-E59 FLD5F20NP-E58 FLD5F20NP-E57 FLD5F20NP-E56 FLD5F20NP-E55 FLD5F20NP-E54 FLD5F20NP-E53 FLD5F20NP-E52 FLD5F20NP-E51 FLD5F20NP-E50 FLD5F20NP-E49 FLD5F20NP-E48 FLD5F20NP-E47 FLD5F20NP-E46 FLD5F20NP-E45 FLD5F20NP-E44 FLD5F20NP-E43 FLD5F20NP-E42 FLD5F20NP-E41 FLD5F20NP-E40 FLD5F20NP-E39 FLD5F20NP-E38 FLD5F20NP-E37 FLD5F20NP-E36 FLD5F20NP-E35 FLD5F20NP-E34 FLD5F20NP-E33 FLD5F20NP-E32 FLD5F20NP-E31 FLD5F20NP-E30 FLD5F20NP-E29 FLD5F20NP-E28 FLD5F20NP-E27 FLD5F20NP-E26 FLD5F20NP-E25 FLD5F20NP-E24 FLD5F20NP-E23 FLD5F20NP-E22 FLD5F20NP-E21 FLD5F20NP-E20 FLD5F20NP-E19 FLD5F20NP-E18 1529.55 1530.33 1531.12 1531.90 1532.68 1533.47 1534.25 1535.04 1535.82 1536.61 1537.40 1538.19 1538.98 1539.77 1540.56 1541.35 1542.14 1542.94 1543.73 1544.53 1545.32 1546.12 1546.92 1547.72 1548.51 1549.32 1550.12 1550.92 1551.72 1552.52 1553.33 1554.13 1554.94 1555.75 1556.56 1557.36 1558.17 1558.98 1559.79 1560.61 1561.42 1562.23 1563.05 196.00 195.90 195.80 195.70 195.60 195.50 195.40 195.30 195.20 195.10 195.00 194.90 194.80 194.70 194.60 194.50 194.40 194.30 194.20 194.10 194.00 193.90 193.80 193.70 193.60 193.50 193.40 193.30 193.20 193.10 193.00 192.90 192.80 192.70 192.60 192.50 192.40 192.30 192.20 192.10 192.00 191.90 191.80 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 5 1,550nm Modulator Integrated DFB Laser FLD5F20NP-E “NP” PACKAGE UNIT: mm 17.24±0.25 15.24±0.25 7-0.5 2.54±0.20 PIN 7 8.17±0.25 7-0.15±0.05 5.41±0.25 7 4.83±0.20 ø0.9±0.1 1.25 8.89±0.15 12.7±0.25 8.25±0.20 ø5.2±0.25 PIN 1 6 TOP VIEW 5 4 3 TEC 2 1 TH 10KΩ 50Ω 4-ø2.67±0.2 ø4.16 5.08±0.25 10.0±0.25 8 20.83±0.25 22.00±0.25 26.04±0.25 29.97±0.25 *L 25.0±0.5 # PIN DESIGNATIONS 1 2 3 4 5 6 7 8 Thermistor Thermistor LD Anode Power Monitor Anode Power Monitor Cathode Thermoelectirc Cooler (+) Thermoelectric Cooler (-) Modulator Anode (-) Case Ground: LD Cathode 0.5±0.2 PIN 8 5.47±0.2 * Pigtail length (L) and connector type are specified in the detail (individual) specification. CONNECTOR For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 6