IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 3.0 6 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 3 10 100 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤150° C, RG = 30 Ω 5 V/ns PD TC = 25° C 70 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 300 260 °C °C Weight TO-220 TO-263 TO-252 4 3 0.35 g g g = 600 = 3.0 ≤ 2.9 V A Ω TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D S (TAB) TO-252 (IXTY) G S G = Gate S = Source (TAB) D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 50 µA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125° C VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved V 5.5 V ± 100 nA 5 50 µA µA 2.9 Ω l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density DS99449E(04/06) IXTA 3N60P IXTP 3N60P IXTY 3N60P Symbol gfs Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, Note 1 2.2 3.4 S 411 pF 44 pF Crss 6.4 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 25 ns td(off) RG = 30 Ω (External) 58 ns 22 ns 9.8 nC 3.4 nC 3.5 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 1.80° C/W (TO-220) Source-Drain Diode ° CW 0.25 Characteristic Values TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 3 A ISM Repetitive 9 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 3 A, -di/dt = 100 A/µs 500 TO-252 (IXTY) Outline ns VR = 100 V, VGS = 0 V Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TO-263 (IXTA) Outline Pins: 1 - Gate 4 - Drain Dim. Millimeter Min. Max. 3 - Source Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXTA 3N60P IXTP 3N60P IXTY 3N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 3 6 VGS = 10V 2.7 2.4 4.5 I D - Amperes I D - Amperes 8V 5 2.1 1.8 1.5 1.2 0.9 4 7V 3.5 3 2.5 2 1.5 6V 0.6 VGS = 10V 5.5 8V 7V 6V 1 0.3 0.5 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3 3.1 VGS = 10V 2.7 R D S ( o n ) - Normalized 2.1 1.8 6V 1.5 1.2 0.9 0.6 5V 0.3 VGS = 10V 2.8 8V 7V 2.4 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.5 2.2 1.9 I D = 3A 1.6 1.3 I D = 1.5A 1 0.7 0.4 0 0 2 4 6 8 10 12 14 V D S - Volts 16 18 -50 20 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3 3.3 VGS = 10V 2.8 3 TJ = 125º C 2.6 2.7 2.4 2.4 I D - Amperes R D S ( o n ) - Normalized 12 2.2 2 1.8 1.6 1.4 2.1 1.8 1.5 1.2 0.9 1.2 0.6 TJ = 25º C 1 0.3 0.8 0 0 1 2 3 I D - Amperes © 2006 IXYS All rights reserved 4 5 6 -50 -25 0 25 50 75 100 TC - Degrees Centigrade IXTA 3N60P IXTP 3N60P IXTY 3N60P Fig. 7. Input Adm ittance Fig. 8. Transconductance 6 4.5 5.5 4 5 3.5 2.5 TJ =125º C 2 25º C 1.5 -40º C 25º C 4 g f s - Siemens 3 I D - Amperes TJ = -40º C 4.5 125º C 3.5 3 2.5 2 1.5 1 1 0.5 0.5 0 0 4 4.5 5 5.5 6 6.5 0 7 0.5 1 1.5 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 10 8 9 6 VG S - Volts I S - Amperes 7 5 4 TJ = 125º C 3 3.5 4 9 10 VDS = 300V 8 I D = 1.5A 7 I G = 10mA 6 5 4 3 2 2 TJ = 25º C 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 1 2 3 V S D - Volts 4 5 6 7 8 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 10.0 1000 C iss R( t h ) J C - ºC / W Capacitance - picoFarads 2.5 Fig. 10. Gate Charge 9 3 2 I D - Amperes 100 C oss 10 1.0 C rss f = 1MHz 1 0.1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 100 Pulse Width - milliseconds 1000