CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 100 Units V VGS ±20 V ID 25 A IDM 100 A 56 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C 0.45 W/ C TJ,Tstg -55 to 175 C Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 2.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Specification and data are subject to change without notice . 1 Rev .4 2008.Oct. http://www.cetsemi.com CED540N/CEU540N Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 100V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 53 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 18A 45 gFS VDS = 25V, ID = 18A 14 S 1275 pF 200 pF 25 pF c Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 50V, ID = 18A, VGS = 10V, RGEN = 5.1Ω 17 34 ns 10 20 ns 40 80 ns Turn-Off Fall Time tf 4 8 ns Total Gate Charge Qg 28 56 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 80V, ID = 18A, VGS = 10V 6 nC 8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 18A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1.9mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 25 A 1.3 V CED540N/CEU540N 80 60 60 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9V VGS=8V 40 VGS=7V 20 VGS=6V VGS=5V 0 0 1 2 3 4 5 10 2 -55 C 4 6 8 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1200 800 400 Coss Crss 0 5 10 15 20 25 3.0 2.5 ID=18A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 20 VDS, Drain-to-Source Voltage (V) 1600 1.2 30 0 2000 1.3 40 6 2400 0 50 -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=80V ID=18A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED540N/CEU540N 6 4 2 0 0 10 20 30 RDS(ON)Limit 100ms 10 1ms 1 10ms DC 10 10 40 2 0 TC=25 C TJ=175 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 0.01 Single Pulse 10 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2