100mA / 50V Digital transistors (with built-in resistors) DTC143ZM / DTC143ZE / DTC143ZUA / DTC143ZKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device design easy. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) DTC143ZM DTC143ZE 0.7 1.6 0.55 0.3 0.2 (3) (2) 0.2 (1)(2) 0.22 0.4 0.4 0.13 0.2 0.5 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 0.2 2.0 0.15 0.5 0.5 ROHM : EMT3 Abbreviated symbol : E23 2.9 DTC143ZKA 0.9 1.1 0.4 0.2 0.3 (1) GND (2) IN (3) OUT 1.0 Abbreviated symbol : E23 DTC143ZUA (1) 0.1Min. 0.8 1.2 0.8 (3) 1.6 1.2 0.32 0.8 0.7 (3) 1.6 2.8 (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensions (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : 123 Abbreviated symbol : E23 Packaging specifications Part No. 0.3Min. (1) 0.1Min. (2) 2.1 1.25 (3) Inner circuit Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − DTC143ZM DTC143ZE − DTC143ZUA − − DTC143ZKA − − OUT R1 IN R2 GND OUT IN − − GND R1=4.7kΩ, R2=47kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.D DTC143ZM / DTC143ZE / DTC143ZUA / DTC143ZKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Symbol Limits DTC143ZM DTC143ZE DTC143ZUA DTC143ZKA Unit Supply voltage VCC 50 V Input voltage VIN −5 to +30 V IO 100 IC(Max.) 100 Output current mA mW Power dissipation PD Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 Electrical characteristics (Ta=25C) Parameter Symbol Min. Input voltage Output voltage Input current Output current Typ. Max. VI(off) − − 0.5 Unit VI(on) 1.3 − − VO(on) − 0.1 0.3 V II − − 1.8 mA VI=5V IO(off) − − 0.5 μA VCC=50V, VI=0V VO=5V, IO=10mA V DC current gain GI 80 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 8 10 12 − Transition frequency fT ∗ ∗ Characteristics of built-in transistor − 250 − MHz Conditions VCC=5V, IO=100μA VO=0.3V, IO=5mA IO/II=5mA/0.25mA − − VCE=10V, IE= −5mA, f=100MHz Electrical characteristic curves 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 5 2 Ta= −40°C 25°C 100°C 1 500m 200m 100m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m Fig.1 Input voltage vs. output current (ON characteristics) VO=5V 500 2m 1m 500μ 200μ Ta=100°C 25°C −40°C 100μ 50μ 20μ 10μ 200 100 Ta=100°C 25°C −40°C 50 20 10 5 5μ 2μ 1μ 0 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 1 1k VCC=5V DC CURRENT GAIN : GI 100 Fig.2 Output current vs. input voltage (OFF characteristics) 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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