PNP Silicon Epitaxial Plannar Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 SOT—23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 1.0 ·Ldeally suited for automatic insertion ·epitaxial planar die construction 0.4 1.9 2.9 ·complementary NPN type available(BC817) 0.95 2.4 1.3 25LT1:5B; 40LT1:5C 0.95 MARKING: 16LT1:5A1; Unit : mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless Symbol Parameter otherwise Test specified） conditions Collector-base breakdown voltage VCBO Ic= -10 μA， Collector-emitter breakdown voltage VCEO Emitter-base breakdown voltage MIN MAX UNIT -50 V Ic= -10 mA， IB=0 -45 V VEBO IE= -1 μA， -5 V Collector cut-off current ICBO VCB= -45 V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -40 V , IB=0 -0.2 μA Emitter cut-off current IEBO VEB= -4 V , -0.1 μA DC current gain IE=0 IC=0 IC=0 100 807-16 807-25 hFE（1） VCE= -1V, IC= -100mA 807-40 250 160 400 250 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50 mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB= -50mA -1.2 V Transition frequency fT VCE= -5 V, f=100MHz IC= -10mA 100 MHz PNP Silicon Epitaxial Plannar Transistors Typical Characteristics BC807-16,25,40LT1