WEDC EDI88512LPAXCC 512kx8 monolithic sram, smd 5962-95600 Datasheet

White Electronic Designs
EDI88512CA
512Kx8 Monolithic SRAM, SMD 5962-95600
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns
Data Retention Function (LPA version)
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Organized as 512Kx8
Commercial, Industrial and Military Temperature Ranges
32 lead JEDEC Approved Evolutionary Pinout
The EDI88512CA is a 4 megabit Monolithic CMOS
Static RAM.
The 32 pin DIP pinout adheres to the JEDEC evolutionary
standard for the four megabit device. All 32 pin packages
are pin for pin upgrades for the single chip enable 128K
x 8, the EDI88128CS. Pins 1 and 30 become the higher
order addresses.
The 36 pin revolutionary pinout also adheres to the
JEDEC standard for the four megabit device. The center
pin power and ground pins help to reduce noise in high
performance systems. The 36 pin pinout also allows the
user an upgrade path to the future 2Mx8.
• Ceramic Sidebrazed 600 mil DIP (Package 9)
• Ceramic Sidebrazed 400 mil DIP (Package 326)
A Low Power version with Data Retention (EDI88512LPA)
is also available for battery backed applications. Military
product is available compliant to Appendix A of MILPRF-38535.
• Ceramic 32 pin Flatpack (Package 344)
• Ceramic Thin Flatpack (Package 321)
• Ceramic SOJ (Package 140)
36 lead JEDEC Approved Revolutionary Pinout
• Ceramic Flatpack (Package 316)
• Ceramic SOJ (Package 327)
*This product is subject to change without notice.
• Ceramic LCC (Package 502)
Single +5V (±10%) Supply Operation
FIG. 1
PIN CONFIGURATION
PIN DESCRIPTION
I/O0-7
36 PIN
TOP VIEW
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
Vcc
Vss
I/O2
I/O3
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
36 pin
9
Revolutionary
10
11
12
13
14
15
16
17
18
32 PIN
TOP VIEW
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE#
I/O7
I/O6
Vss
Vcc
I/O5
I/O4
A14
A13
A12
A11
A10
NC
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0-18
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32 pin
Evolutionary
Vcc
A15
A17
WE#
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
WE#
CS#
OE#
VCC
VSS
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
A0-18
Address
Buffer
Address
Decoder
I/O
Circuits
I/O0-7
WE#
CS#
OE#
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October 2004
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White Electronic Designs
EDI88512CA
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
TRUTH TABLE
Value
Unit
-0.5 ≤ TA ≤ 7.0
V
OE#
X
H
L
X
Operating Temperature TA (Ambient)
CS#
H
L
L
L
0 ≤ TA ≤ +70
°C
Industrial
-40 ≤ TA ≤ +85
°C
Military
-55 ≤ TA ≤ +125
°C
Parameter
Storage Temperature, Plastic
-65 ≤ TA ≤ +150
°C
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial
Power Dissipation
1.5
W
Output Current
20
mA
Junction Temperature, TJ
175
°C
WE#
X
H
H
L
Mode
Standby
Output Deselect
Read
Write
Output
High Z
High Z
Data Out
Data In
Power
Icc2, Icc3
Icc1
Icc1
Icc1
RECOMMENDED OPERATING CONDITIONS
Symbol
Min
Typ
Max
Unit
VCC
VSS
VIH
VIL
4.5
0
2.2
-0.3
5.0
0
—
—
5.5
0
3.0
+0.8
V
V
V
V
CAPACITANCE
NOTE:
Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
(TA = +25°C)
Parameter
Symbol
Condition
Max
Unit
Address Lines
CI
VIN = Vcc or Vss, f = 1.0MHz
12
pF
Data Lines
CO
VOUT = Vcc or Vss, f = 1.0MHz
14
pF
These parameters are sampled, not 100% tested.
DC CHARACTERISTICS
(VCC = 5V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Units
Input Leakage Current
ILI
VIN = 0V to VCC
-10
10
A
Output Leakage Current
ILO
VI/O = 0V to VCC
-10
10
A
Operating Power Supply Current
ICC1
WE#, CS# = VIL, II/O = 0mA, Min Cycle
—
—
250
225
mA
mA
Standby (TTL) Power Supply Current
ICC2
CS# ≥ VIH, VIN ≤ VIL, VIN ≥ VIH
—
60
mA
Full Standby Power Supply Current
ICC3
CS# ≥ VCC -0.2V
VIN ≥ Vcc -0.2V or VIN ≤ 0.2V
—
—
25
20
mA
mA
Output Low Voltage
VOL
IOL = 6.0mA
—
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
—
V
(17ns)
(20 -55ns)
CA
LPA
NOTE: DC test conditions: VIL = 0.3V, VIH = Vcc -0.3V
AC TEST CONDITIONS
Figure 1
Figure 2
Vcc
Input Pulse Levels
Vcc
VSS to 3.0V
Input Rise and Fall Times
Input and Output Timing Levels
480Ω
Q
480Ω
Output Load
30pF
Figure 1
NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)
Q
255Ω
5ns
1.5V
255Ω
5pF
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October 2004
Rev. 11
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EDI88512CA
AC CHARACTERISTICS – READ CYCLE
(VCC = 5.0V, Vss = 0V, -55°C ≤ TA ≤ +125°C)
Symbol
Parameter
15ns
17ns
Alt.
Min
tAVAV
tRC
15
Address Access Time
tAVQV
tAA
15
17
20
25
35
Chip Enable Access Time
tELQV
tACS
15
17
20
25
35
tELQX
tCLZ
2
tEHQZ
tCHZ
0
Output Hold from Address Change
tAVQX
tOH
0
Output Enable to Output Valid
tGLQV
tOE
Output Enable to Output in Low Z (1)
tGLQX
tOLZ
0
Output Disable to Output in High Z(1)
tGHQZ
tOHZ
0
Max
17
Min
20
3
7
Min
7
8
10
Units
45
55
ns
45
55
ns
ns
0
0
20
0
15
30
0
0
20
ns
ns
25
0
0
ns
3
20
15
10
Max
55
0
0
0
Min
3
15
12
8
Max
55ns
45
0
0
0
Min
0
10
7
45ns
3
0
0
0
Max
35
0
8
0
Min
3
0
0
8
Max
25
3
0
0
7
Max
35ns
JEDEC
Chip Disable to Output in High Z (1)
Min
25ns
Read Cycle Time
Chip Enable to Output in Low Z (1)
Max
20ns
ns
ns
0
20
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS – WRITE CYCLE
(VCC = 5.0V, VSS = 0V, -55°C≤ TA ≤ +125°C)
Symbol
Parameter
15ns
17ns
Max
Max
Min
Min Max
Min
tWC
15
17
20
25
35
45
55
ns
Chip Enable to End of Write
tELWH
tELEH
tCW
tCW
13
13
14
14
15
15
17
17
25
25
30
30
50
50
ns
ns
Address Setup Time
tAVWL
tAVEL
tAS
tAS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns
ns
Address Valid to End of Write
tAVWH
tAVEH
tAW
tAW
13
13
14
14
15
15
17
17
25
25
30
30
50
50
ns
ns
Write Pulse Width
tWLWH
tWLEH
tWP
tWP
13
13
14
14
15
15
17
17
25
25
30
30
45
45
ns
ns
Write Recovery Time
tWHAX
tEHAX
tWR
tWR
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns
ns
Data Hold Time
tWHDX
tEHDX
tDH
tDH
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns
ns
8
0
10
0
25
Min
0
Max
55ns
Alt.
0
Max
45ns
tAVAV
8
Min
35ns
JEDEC
0
Max
25ns
Write Cycle Time
8
Min
20ns
30
Min
0
Max
30
Units
Write to Output in High Z (1)
tWLQZ
tWHZ
0
Data to Write Time
tDVWH
tDVEH
tDW
tDW
8
8
8
8
10
10
12
12
20
20
25
25
40
30
ns
ns
ns
Output Active from End of Write (1)
tWHQX
tWLZ
0
0
0
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
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October 2004
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EDI88512CA
FIG. 2 TIMING WAVEFORM - READ CYCLE
tAVAV
ADDRESS
tAVQV
tAVAV
ADDRESS
DATA I/O
CS#
ADDRESS 1
ADDRESS 2
tAVQV
tAVQX
tELQV
tELQX
tEHQZ
tGLQV
tGLQX
tGHQZ
OE#
DATA 1
DATA 2
DATA OUT
READ CYCLE 1 (WE# HIGH; OE#, CS# LOW)
READ CYCLE 2 (WE# HIGH)
FIG. 3 WRITE CYCLE - WE# CONTROLLED
tAVAV
ADDRESS
tAVWH
tELWH
tWHAX
CS#
tAVWL
tWLWH
WE#
tDVWH
DATA IN
tWHDX
DATA VALID
tWLQZ
tWHQX
HIGH Z
DATA OUT
WRITE CYCLE 1, WE# CONTROLLED
FIG. 4 WRITE CYCLE - CS# CONTROLLED
tAVAV
ADDRESS
tAVEH
tELEH
tEHAX
CS#
tAVEL
tWLEH
WE#
tDVEH
DATA IN
DATA OUT
tEHDX
DATA VALID
HIGH Z
WRITE CYCLE 2, CS# CONTROLLED
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 11
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EDI88512CA
DATA RETENTION CHARACTERISTICS (EDI88512LPA ONLY)
(-55°C ≤ TA ≤ +125°C)
Characteristic
Low Power Version only
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
VCC
ICCDR
VCC = 2.0V
CS# ≥ VCC -0.2V
2
–
–
–
–
2
V
mA
Chip Disable to Data Retention Time
Operation Recovery Time
tCDR
TR
VIN ≥ VCC -0.2V
or VIN ≤ 0.2V
0
tAVAV
–
–
–
–
ns
ns
FIG. 5 DATA RETENTION - CS# CONTROLLED
DATA RETENTION MODE
4.5V
VCC
WS32K32-XHX
VCC
4.5V
tCDR
CS#
tR
CS# = VCC -0.2V
DATA RETENTION, CS# CONTROLLED
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October 2004
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EDI88512CA
PACKAGE 9: 32 LEAD SIDEBRAZED CERAMIC DIP, SMD 5962-95600XXMXA
1.616
1.584
0.200
0.125
0.100
TYP
0.020
0.016
0.061
0.017
0.620
0.600
0.060
0.040
Pin 1 Indicator
0.155
0.115
0.600
NOM
15 x 0.100 = 1.500
ALL DIMENSIONS ARE IN INCHES
PACKAGE 326: 32 LEAD SIDEBRAZED CERAMIC DIP
1.616
1.584
0.420
0.400
Pin 1 Indicator
1
0.200
0.125
0.100
TYP
0.020
0.016
0.061
0.017
0.155
0.115
1
0.400
NOM
15 x 0.100 = 1.500
ALL DIMENSIONS ARE IN INCHES
PACKAGE 140: 32 LEAD CERAMIC SOJ, SMD 5962-95600XXMUA
0.010
0.006
0.019
0.015
0.840
0.820
0.444
0.430
0.379
0.050
TYP
0.155
0.106
ALL DIMENSIONS ARE IN INCHES
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October 2004
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EDI88512CA
PACKAGE 316: 36 PIN CERAMIC FLATPACK, SMD 5962-95600XXMTA
0.920 ± 0.010
0.007
0.003
0.370
0.250
1.00 REF
0.395
0.385
0.515
0.505
0.040
0.030
Pin 1
0.045
0.020
0.019
0.015
0.125
0.100
0.050
TYP
ALL DIMENSIONS ARE IN INCHES
PACKAGE 321: 32 PIN THINPACK™ FLATPACK, SMD 5962-95600XXMYA
0.838
MAX
0.567
0.427 0.559
0.429
0.050
TYP
0.016 ± 0.008
0.008
0.005
0.020
0.030
0.118
MAX.
ALL DIMENSIONS ARE IN INCHES
PACKAGE 344: 32 PIN CERAMIC FLATPACK, SMD 5962-95600XXM9A
+0.002
0.006 -0.001
0.423
± 0.004
0.024 REF.
0.112 MAX.
0.838 MAX.
0.050 ± 0.002
TYP.
0.016
± 0.008
0.300
± 0.010
ALL DIMENSIONS ARE IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 11
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White Electronic Designs
EDI88512CA
PACKAGE 327: 36 LEAD CERAMIC SOJ, SMD 5962-95600XXMMA
0.010
0.006
0.019
0.015
0.920
0.940
0.050
TYP
0.444
0.434
0.379
0.155
0.106
ALL DIMENSIONS ARE IN INCHES
PACKAGE 502: 36 LEAD CERAMIC LCC, SMD 5962-95600XXMNA (PENDING)
0.135
0.115
0.100
0.080
36
1
0.100
TYP
0.009 TYP
0.930
0.910
0.028
0.022
0.860
0.840
0.050
BSC
0.460
0.445
0.066
0.054
ALL DIMENSIONS ARE IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 11
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EDI88512CA
ORDERING INFORMATION
EDI 8 8 512
CA X X X
WHITE ELECTRONIC DESIGNS
SRAM
ORGANIZATION, 512Kx8
TECHNOLOGY:
CA = CMOS Standard Power
LPA = Low Power
ACCESS TIME (ns)
PACKAGE TYPE:
C = 32 lead Sidebrazed DIP, 600 mil (Package 9)
K = 36 lead Ceramic LCC (Package 502)
N = 32 lead Ceramic SOJ (Package 140)
T
= 32 lead Sidebrazed DIP, 400 mil (Package 326)
B32 = 32 pin Ceramic Thinpack™ Flatpack (Package 321)
F32 = 32 pin Ceramic Flatpack (Package 344)
F36 = 36 pin Ceramic Flatpack (Package 316)
N36 = 36 lead Ceramic SOJ (Package 327)
DEVICE GRADE:
B = MIL-STD-883 Compliant
M
= Military Screened
-55°C ≤ TA ≤ +125°C
I
= Industrial
-40°C ≤ TA ≤ +85°C
C
= Commercial
0°C ≤ TA ≤ +70°C
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 11
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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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