^Se-mi-dondudtoi Lpioaucki, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • • MJ3000 PNP NPN High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc Monolithic Construction with Built-in Base-Emitter Shunt Resistors MJ3001* MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol MJ2500 MJ3000 MJ2501 MJ3001 Unit VCEO 60 80 Vdc VCB VEB "c IB PD 60 80 Vdc TJ. Tstg 5.0 Vdc 10 Adc 0.2 Adc 150 0.857 Watts W/°C -55 to + 200 °C 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 150 WATTS THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 9JC 1.17 °c/w PNP MJ2500 COLLECTOR 9 - n II 1 1 ! **** . - K-" Hj ~~^ i -> i | = 2.0 k =50 j "-^VW-A-^VW-H j NPN MJ3000 MJ3001 (TO-3) COLL ECTOR C) |I I *~ ~l , l •^ I I I t^•^ rJ i-C ;; ii i -1 ji <> I » 2.0k = 50 I I L-AVW.,^/VV-i l_ C EM TTER EMUFTER Figure 1. Darlington Circuit Schematic NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MJ2500 MJ2501 MJ3OOO MJ3OO1 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) | Characteristic I Symbol I| Min | Max | Unit OFF CHARACTERISTICS Collector Emitter Breakdown VoltageO ) (IC = 100 mAdc, IB = O) MJ2500, MJ3000 MJ2501, MJ3001 Collector-Emitter Leakage Current (VEB = 60 Vdc, RBE = 1 .0 k ohm) (VEB = 80 Vdc, RBE = 1 .0 k ohm) (VEB = 60 Vdc. RBE = 1 .0 k ohm, TC = 1 50°C) (VEB = 80 Vdc, RBE = 1.0k ohm, TC = 150°C) MJ2500, MJ3000 M J2501 , MJ3001 MJ2500, MJ3000 MJ2501, MJ3001 V(BR)CEO 60 80 Vdc — mAdc 'CER Emitter Cutoff Current (VBE = 5.0 Vdc, lc = 0) Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) MJ2500, MJ3000 MJ2501,MJ3001 — 1.0 1.0 5.0 5.0 IEBO _ 2.0 mAdc ICEO — 1.0 1.0 mAdc HFE 1000 — — 2.0 4.0 Vdc — — 3.0 Vdc ON CHARACTERISTICS(I) DC Current Gain (Ic = 5.0 Adc, VCE = 3-° vdc) Collector-Emitter Saturation Voltage (lc = 5.0 Adc, IB = 20 mAdc) (lc = 10 Adc, IB = 50 mAdc) vCE(sat) Base Emitter Voltage (lc = 5,0 Adc, VCE = 3.0 Vdc) vBE(on) (1)PulseTest: Pulse Width < 300 (is, Duty Cycle < 2.0%. A «• NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M. 1982 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY 00.13 (0.005)® | T|~Q ®| Y @ DIM A B C D F G H K L N Q U V INCHES MIN MAX 1.55C REF 1.050 0.250 0.335 0.043 0.038 0.070 0.055 0.430 BSC 0.215 BSC 0.440 0,480 0.665 BSC — 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PINT BASE 2. EMITTER CASE: COLLECTOR MILLIMETERS MIN MAX 39.37 REF 26.67 — 8.51 6.35 0.97 1.09 1.77 1.40 10.92 BSC 5.46 BSC 12.19 11.18 16.89 BSC 21.08 3.84 4.19 30. 15 BSC 4.77 3.33 |