LRC BC848CWT1 General purpose transistors(npn silicon) Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
3
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
V CEO
65
45
30
V
Collector–Base Voltage
V CBO
80
50
30
V
Emitter–Base Voltage
V
6.0
6.0
5.0
V
100
100
100
mAdc
Collector Current — Continuous
EBO
IC
1
2
CASE 419–02, STYLE 3
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
mW
R θJA
PD
T J , T stg
833
2.4
–55 to +150
°C/W
mW/°C
°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
Collector–Base Breakdown Voltage
(IC = 10 µA)
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series,
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
v
v
v
v
nA
µA
1.FR–5=1.0 x 0.75 x 0.062in
K4–1/4
LESHAN RADIO COMPANY, LTD.
BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
h FE
—
—
—
110
200
420
—
—
—
—
580
—
90
150
270
180
290
520
—
—
0.7
0.9
660
—
—
—
—
220
450
800
0.25
0.6
—
—
700
770
—
fT
100
—
—
MHz
Cobo
NF
—
—
4.5
pF
dB
—
—
—
—
10
4.0
ON CHARACTERISTICS
DC Current Gain
(I C = 10 µA, V CE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
(I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA)
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
V CE(sat)
V
BE(sat)
V BE(on)
V
V
mV
SMALL–SIGNAL CHARACTERISTICS
1.0
2.0
0.9
V CE = 10 V
T A = 25°C
1.5
V BE(sat) @ I C /I B=10
0.7
1.0
V BE(on) @ V CE = 10 V
0.6
0.8
0.6
0.4
0.3
0.5
0.4
0.3
0.2
V CE(sat) @ I C /I B = 10
0.1
0
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
T A = 25°C
1.6
I C= 200 mA
1.2
I C = 100 mA
IC=
I C = 50 mA
10 mA 20 mA
0.8
0.4
0
0.02
0.1
1.0
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mAdc)
2.0
IC=
0.1
200
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
VCE, COLLECTOR– EMITTER VOLTAGE (V)
T A = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
Current–Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz)
Noise Figure (I C = 0.2 mA,
BC846A, BC847A, BC848A
V CE = 5.0 Vdc, R S = 2.0 kΩ,
BC846B, BC847B, BC848B
f = 1.0 kHz, BW = 200 Hz)
BC847C, BC848C
10
20
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
K4–2/4
LESHAN RADIO COMPANY, LTD.
BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1
BC847/BC848
T A = 25°C
7.0
5.0
C ib
3.0
C ob
2.0
1.0
0.4 0.6 0.81.0
2.0
4.0 6.0 8.010
20
400
300
200
V CE = 10V
T A = 25°C
100
80
60
40
30
20
0.5 0.7 1.0
40
5.0 7.010
20
30
50
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
1.0
T A = 25°C
V CE = 5V
T A = 25°C
0.8
2.0
1.0
0.5
V BE(sat) @ I C /I B = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ I C /I B= 10
0
0.1 0.2
1.0
10
100
0.2
0.5
T A= 25°C
1.6
50mA
200mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
20
θVB , TEMPERATURE COEFFICIENT (mV/°C)
2.0
20mA
2.0
5.0
10
20
50
100 200
Figure 8. “On” Voltage
Figure 7. DC Current Gain
100mA
1.0
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
2.0 3.0
V R , REVERSE VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
V, VOLTAGE (VOLTS)
10.0
–1.0
–1.4
–1.8
θ VB for V BE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
K4–3/4
LESHAN RADIO COMPANY, LTD.
BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
BC846
40
C, CAPACITANCE (pF)
T A= 25°C
20
C ib
10
6.0
4.0
C ob
2.0
0.1 0.2
0.5
1.0 2.0
5.0 10 20
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
50
100
500
V CE= 5 V
T A= 25°C
200
100
50
20
1.0
5.0 10
50 100
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
K4–4/4
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