BZM55-Series Vishay Semiconductors Small Signal Zener Diodes Features • Saving space • Hermetic sealed parts e2 • Electrical data identical with the devices BZT55..Series / TZM..Series • Fits onto SOD323/SOD110 footprints • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Available with tighter tolerances • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612315 Applications Mechanical Data • Voltage stabilization Case: MicroMELF Weight: approx. 12 mg Packaging codes/options: TR / 2.5 k per 7" reel, 12.5 k/box TR3 / 10 k per 13" reel, 10 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Power dissipation Test condition RthJA ≤ 300 K/W Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Symbol Value Unit Junction to ambient air Parameter mounted on epoxy-glass hard tissue, Fig. 1 Test condition RthJA 500 K/W Junction tie point 35 µm copper clad, 0.9 mm2 copper area per electrode RthJL 300 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85597 Rev. 1.9, 10-Mar-06 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.5 V www.vishay.com 1 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55C.. Partnumber Zener Voltage Range1) VZ at IZT Dynamic Resistance rzjT at IZT, f = 1kHz rzjK at IZK, f = 1kHz Ω V Test Current Temperature Coefficient Test Current IZT TKVZ IZK IR IR at Tamb at Tamb = 25 °C = 150 °C at VR mA µA V mA %/K min min max max BZM55C2V4 2.28 2.56 < 85 < 600 5 - 0.09 - 0.06 1 < 50 < 100 1 BZM55C2V7 2.5 2.9 < 85 < 600 5 - 0.09 - 0.06 1 < 10 < 50 1 BZM55C3V0 2.8 3.2 < 90 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 BZM55C3V3 3.1 3.5 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C3V6 3.4 3.8 < 90 < 600 5 -0.08 - 0.05 1 <2 < 40 1 BZM55C3V9 3.7 4.1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 BZM55C4V3 4 4.6 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZM55C4V7 4.4 5 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZM55C5V1 4.8 5.4 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZM55C5V6 5.2 6 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZM55C6V2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZM55C6V8 6.4 7.2 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZM55C7V5 7 7.9 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZM55C8V2 7.7 8.7 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZM55C9V1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZM55C10 * 9.4 0.6 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZM55C11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZM55C12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZM55C13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZM55C15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZM55C16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZM55C18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZM55C20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZM55C22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZM55C24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZM55C27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZM55C30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZM55C33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZM55C36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZM55C39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 <5 30 BZM55C43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZM55C47 * 44 50 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZM55C51 * 48 54 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZM55C56 * 52 60 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZM55C62 * 58 66 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZM55C68 * 64 72 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZM55C75 * 70 79 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 1) tp ≤ 10 ms, T/tp > 1000 *) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C www.vishay.com 2 Reverse Leakage Current Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55B.. Partnumber Zener Voltage Range1) VZ at IZT Dynamic Resistance rzjT at IZT, f = 1kHz rzjK at IZK, f = 1kHz Ω V Test Current Temperature Coefficient Test Current IZT TKVZ IZK mA min max BZM55B2V4 2.35 2.45 < 85 < 600 BZM55B2V7 2.64 2.76 < 85 < 600 BZM55B3V0 2.94 3.06 < 90 BZM55B3V3 3.24 3.36 < 90 BZM55B3V6 3.52 3.68 BZM55B3V9 3.82 BZM55B4V3 %/K Reverse Leakage Current IR at Tamb = 25 °C mA IR at Tamb = 150 °C µA at VR V min max 5 - 0.09 - 0.06 1 < 50 < 100 1 5 - 0.09 - 0.06 1 < 10 < 50 1 < 600 5 - 0.08 - 0.05 1 <4 < 40 1 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 3.98 < 90 < 600 5 - 0.08 - 0.05 1 <2 < 40 1 4.22 4.38 < 90 < 600 5 - 0.06 - 0.03 1 <1 < 20 1 BZM55B4V7 4.6 4.80 < 80 < 600 5 - 0.05 0.02 1 < 0.5 < 10 1 BZM55B5V1 5 5.20 < 60 < 550 5 - 0.02 0.02 1 < 0.1 <2 1 BZM55B5V6 5.48 5.72 < 40 < 450 5 - 0.05 0.05 1 < 0.1 <2 1 BZM55B6V2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 <2 2 BZM55B6V8 6.66 6.94 <8 < 150 5 0.03 0.07 1 < 0.1 <2 3 BZM55B7V5 7.35 7.65 <7 < 50 5 0.03 0.07 1 < 0.1 <2 5 BZM55B8V2 8.04 8.36 <7 < 50 5 0.03 0.08 1 < 0.1 <2 6.2 BZM55B9V1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 <2 6.8 BZM55B10 * 9.8 10.20 < 15 < 70 5 0.03 0.1 1 < 0.1 <2 7.5 BZM55B11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 <2 8.2 BZM55B12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 <2 9.1 BZM55B13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 <2 10 BZM55B15 * 14.7 15.30 < 30 < 110 5 0.03 0.11 1 < 0.1 <2 11 BZM55B16 * 15.7 16.30 < 40 < 170 5 0.03 0.11 1 < 0.1 <2 12 BZM55B18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 <2 13 BZM55B20 * 19.6 20.40 < 55 < 220 5 0.03 0.11 1 < 0.1 <2 15 BZM55B22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 <2 16 BZM55B24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 18 BZM55B27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 20 BZM55B30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 22 BZM55B33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 24 BZM55B36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 <2 27 BZM55B39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 <5 30 BZM55B43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 <5 33 BZM55B47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 <5 36 BZM55B51 * 50 52.0 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 BZM55B56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 BZM55B62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 BZM55B68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 BZM55C75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56 1) tp ≤ 10 ms, T/tp > 1000 *) Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin ≤ 35 nA at Tj 25 °C Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 3 BZM55-Series Vishay Semiconductors Typical Characteristics 200 600 CD - Diode Capacitance (pF) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 500 400 300 200 100 40 80 120 160 100 IZ = 5 mA 10 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9598 25 20 VZ - Z-Voltage (V) 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 - 60 95 9599 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 15 Figure 4. Diode Capacitance vs. Z-Voltage VZtn - Relative Voltage Change Tj = 25 °C 1 10 5 95 9601 1000 VZ - Voltage Change (mV) 50 0 Figure 1. Total Power Dissipation vs. Ambient Temperature 0 60 120 180 240 Tj - Junction Temperature (°C) Figure 5. Typical Change of Working Voltage vs. Junction Temperature 100 15 IF - Forward Current (mA) TKVZ - Temperature Coefficient of VZ (10-4/K) Tj = 25 °C 100 200 Tamb - Ambient Temperature (°C) 95 9602 10 5 IZ = 5 mA 0 10 Tj = 25 °C 1 0.1 0.01 0.001 -5 0 95 9600 10 20 40 30 VZ - Z-Voltage (V) 0 50 Figure 3. Temperature Coefficient of Vz vs. Z-Voltage 4 VR = 2 V 0 0 0 www.vishay.com 150 95 9605 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 6. Forward Current vs. Forward Voltage Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors 100 0.71 80 1.3 1.27 0.152 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 °C 9.9 60 0.355 25 40 10 20 2.5 0 0 4 6 12 8 24 95 10329 20 VZ - Z-Voltage (V) 95 9604 Figure 10. Board for RthJA definition (in mm) Figure 7. Z-Current vs. Z-Voltage IZ - Z-Current (mA) 50 Reflow Soldering Ptot = 500 mW Tamb = 25 °C 40 30 1.2 20 10 0.8 0 15 20 95 9607 25 30 35 0.8 2.4 16773 VZ - Z-Voltage (V) Figure 11. Recommended foot pads (in mm) Figure 8. Z-Current vs. Z-Voltage rZ - Differential Z-Resistance (Ω) 0.8 1000 Wave Soldering IZ = 1 mA 100 1.4 5 mA 10 10 mA 0.9 1.0 0.9 Tj = 25 °C 1 0 95 9606 5 10 15 20 25 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage Document Number 85597 Rev. 1.9, 10-Mar-06 16774 2.8 Figure 12. Recommended foot pads (in mm) www.vishay.com 5 BZM55-Series Zthp - Thermal Resistance for Pulse Cond. (KW) Vishay Semiconductors 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 95 9603 101 102 tP - Pulse Length (ms) Figure 13. Thermal Response 2.0 (0.079) 1.8 (0.071) ) 53 .0 (0 0.25 (0.010) 0.15 (0.006) la G 1.2 (0.047) 1.1 (0.043) < 1. 35 1 (0.039) surface plan Glass case MicroMELF ss Cathode indification surface plan 0.6 (0.024) Package Dimensions in mm (Inches) > R 2.5 (R 0.098) Glass ISO Method E Wave Soldering 1.4 (0.055) 1.2 (0.047) Reflow Soldering 0.8 (0.031) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 0.8 (0.031) 1.0 (0.039) 2.4 (0.094) 2.8 (0.110) Document No.: 6.560-5007.01-4 Rev. 11, 07.Feb.2005 9612072 www.vishay.com 6 Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1