Nell NKH600 Thyristor/diode and thyristor/thyristor, 600a(super magn-a-pak power modules) Datasheet

RoHS
NKT600/NKH600 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 600A
(SUPER MAGN-A-PAK Power Modules)
48
50
38
48
SUPER MAGN -A-PAK
66+1
36+1
4-Ø6.5
14
112+1
FEATURES
128+1
150+3
• High voltage
• Electrically isolated by DBC ceramic (AI 2O3)
3-M10 SCREWS
• 3500 V RMS isolating voltage
2.8x0.8+0.1
• Industrial standard package
50
• Modules uses high voltage power thyristor/diodes in two
basic configurations
60
• Glass passivated chips
53
22
• High surge capability
• Simple mounting
• UL approved file E320098
All dimensions in millimeters
• Compliant to RoHS
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
K2
G2
• Battery charges
~
-
+
• Welders
G1
K1
• Power converters
NKT
• Lighting control
• Heat and temperature control
• Ups
~
-
+
G1
K1
PRODUCT SUMMARY
IT(AV)
600 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
600
A
IT(AV)
85 °C
IT(RMS)
85 °C
942
50 Hz
18000
60 Hz
18900
50 Hz
1620
60 Hz
1478
ITSM
I2t
I2√t
16200
A
kA2s
kA2√s
VDRM/VRRM
Range
400 to 1600
V
TJ
Range
-40 to 125
°C
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Page 1 of 4
NKH
RoHS
NKT600/NKH600 Series RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM /V DRM , MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM /V DSM , MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
NKT600
NKH600
IRRM /I DRM
AT 125 °C
mA
40
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
lT(AV)
lT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
180° conduction, half sine wave ,50Hz ,TC = 85°C
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I 2t for fusing
I 2t
No voltage
reapplied
t = 8.3 ms
A
85
°C
942
100%V RRM
reapplied
1620
1478
kA2s
1134
1033
Maximum I 2√t for fusing
I t
t = 0.1 ms to 10 ms, no voltage reapplied
16200
Maximum on-state voltage drop
VTM
lTM= 1800A, TJ = 25 °C, 180° conduction
1.9
Maximum forward voltage drop
VFM
lFM = 1800A, TJ = 25 °C, 180° conduction
1.6
IH
Anode supply = 12 V initial I T = 30 A, TJ = 25 °C
300
IL
Anode supply = 12 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
500
Maximum latching current
A
18900
Sine half wave,
initial TJ =
TJ maximum
2√
Maximum holding current
UNITS
600
18000
t = 8.3 ms
t = 10 ms
VALUES
kA2√s
V
mA
SWITCHING
PARAMETER
SYMBOL
Typical delay time
td
Typical rise time
tr
TEST CONDITIONS
VALUES
TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs
1
V d = 0.67 % V DRM
2
UNITS
μs
Typical tum-off time
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tq
ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum,
VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
Page 2 of 4
50 to 150
RoHS
NKT600/NKH600 Series RoHS
SEMICONDUCTOR
Nell High Power Products
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C
RMS isolation Voltage
VISO
50 Hz, circuit to base,
all terminals shorted, 25 ºC ,1s
Critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum,
exponential to 67 % rated V DRM
VALUES
UNITS
40
mA
3500
V
500
V/μs
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
TEST CONDITIONS
PGM
t p ≤ 5 ms, TJ = TJ maximum
10
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
- VGT
3
t p ≤ 5 ms, TJ = TJ maximum
W
A
10
V
VGT
2
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = 25 °C
I GT
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
I GD
Maximum rate of rise of
turned-on current
dI/dt
200
mA
0.25
V
10
mA
150
A/μs
VALUES
UNITS
- 40 to 125
°C
TJ = TJ maximum, 67% V DRM applied
TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
junction operating and storage
temperature range
TJ, Tstg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.06
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth , flat and greased
0.009
Mounting
torque ± 10 %
IAP to heatsink , M6
busbar to IAP , M10
°C/W
A mounting compound is recommended and the
torque should be rechecked after a period of
about 3 hours to allow for the
spread of the compound.
Approximate weight
Case style
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4
N.m
12
1800
g
63.5
oz.
Super MAGN-A-PAK
Page 3 of 4
RoHS
NKT600/NKH600 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 On-state current vs. voltage characteristics
Fig.2 Transient thermal impedance(junction-case)
3.6
Transient thermal impedance (°C/W)
0.07
On-state peak voltage (V)
3.2
T J = 125°C
2.8
2.4
2
1.6
1.2
0.8
100
1000
0.06
0.05
0.04
0.03
0.02
0.01
0
0.001
10000
0.01
0.1
On-state current (A)
Time (s)
Fig.4 Case temperature vs. on-state average current
Fig.3 Power consumption vs. average current
140
180°
120°
180
0
ase temperature (°C)
Maximum power consumption (W)
800
600
90°
Conduction Angle
60°
30°
400
200
120
0
100
180
Conduction Angle
80
60
40
20
30°
60°
90°
120° 180°
0
0
0
100
200
300
400
500
0
600
On-state average current (A)
200
400
600
800
1000
On-state average current (A)
2
Fig.5 On-state surge current vs cycles
Fig.6 I t characteristics
1900
18
16
1600
14
A S (1000A S)
1300
2
12
10
2
On-state surge current (KA)
10
1
8
1000
700
400
6
4
100
1
10
100
Cycles @50Hz
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Page 4 of 4
10
1
Time (ms)
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