INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R041P6 IIPW60R041P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 77.5 A IDM Drain Current-Single Pulsed 267 A PD Total Dissipation @TC=25℃ 481 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.26 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R041P6 IIPW60R041P6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=2.96mA 3.5 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4.5 V VGS=10V; ID=35.5A 41 mΩ Gate-Source Leakage Current VGS= 20V; VDS= 0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 5 μA VSD Diode forward voltage IF=44.4A, VGS = 0V isc website：www.iscsemi.cn 2 V isc & iscsemi is registered trademark