SMC MBR2050 Schottky rectifier Datasheet

MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SANGDEST
MICROELECTRONICS
Green Products
Technical Data
Data Sheet N0034, Rev. A
MBR2050/2060CT MBRB2050/2060CT
MBR2050/2060CT-1 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 ℃ TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
MBR2050CT
MBR2060CT
TO-220AB
Case styles
MBRB2050CT
MBRB2060CT
2
D PAK
MBR2050CT-1
MBR2060CT-1
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SANGDEST
MICROELECTRONICS
Green Products
Technical Data
Data Sheet N0034, Rev. A
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
4.85
0.25
2.89
0.96
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
0.25BSC
5°
4°
4°
0.61
1.37
8.85
15.6
2.70
1.40
2.20
8°
D2PAK
TO-262
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SANGDEST
MICROELECTRONICS
Green Products
Technical Data
Data Sheet N0034, Rev. A
Marking Diagram:
Where XX is Reverse Voltage
Where XXXXX is YYWWL
MBR
B
20
XX
CT/CT-1
SSG
YY
WW
L
MBR20XXCT
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage (50/60V)
= Configuration
= SSG
= Year
= Week
= Lot Number
MBRB20XXCT
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
MBR20XXCT
MBR20XXCT-1
Package
TO-220AB
(Pb-Free)
D²PAK
(Pb-Free)
MBRB20XXCT
Shipping
50pcs / tube
800pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Rectified Output
Current
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Symbol
VRWM
Condition
-
Io
50Hz Full Sine Wave Resistive
Load @TC = 80 °C
20
A
8.3ms,50Hz Full Sine Wave,
1Cycle Non-repetitive
180
A
IFSM
50
60
Max.
MBR2050CT
MBR2060CT
Units
V
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SANGDEST
MICROELECTRONICS
Green Products
Technical Data
Data Sheet N0034, Rev. A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
VF1
VF2
Reverse Current
(per leg)*
IR1
IR2
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
*
CT
LS
dv/dt
Condition
@ 10A, Pulse, TJ = 25 ℃
@ 20 A, Pulse, TJ = 25 °C
@ 10A, Pulse, TJ = 125 ℃
@ 20A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 ℃
@VR = rated VR
TJ = 125 ℃
@VR = 5V, TC = 25 ℃
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.80
0.95
0.70
0.85
1.0
Units
V
150
mA
400
pF
8.0
nH
10,000
V/s
V
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Typical Thermal Resistance
Case to Heat Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
RθCS
wt
Condition
DC operation
Mounting surface, smooth and
greased
(only for TO-220)
ITO-220AB
Specification
-55 to +150
-55 to +150
Units
°C
°C
2.3
°C/W
0.50
°C/W
2
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
SANGDEST
MICROELECTRONICS
Green Products
Technical Data
Data Sheet N0034, Rev. A
10
TJ=25℃
100
10
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current-IR(MA)
1000
1
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0034, Rev. A
MBR2050/2060CT
MBRB2050/2060CT
MBR2050/2060CT-1
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
Similar pages