MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0034, Rev. A MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 ℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR2050CT MBR2060CT TO-220AB Case styles MBRB2050CT MBRB2060CT 2 D PAK MBR2050CT-1 MBR2060CT-1 TO-262 Mechanical Dimensions: In Inches / mm TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0034, Rev. A Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 4.85 0.25 2.89 0.96 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 0.61 1.37 8.85 15.6 2.70 1.40 2.20 8° D2PAK TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0034, Rev. A Marking Diagram: Where XX is Reverse Voltage Where XXXXX is YYWWL MBR B 20 XX CT/CT-1 SSG YY WW L MBR20XXCT = Device Type = Package type = Forward Current (20A) = Reverse Voltage (50/60V) = Configuration = SSG = Year = Week = Lot Number MBRB20XXCT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBR20XXCT MBR20XXCT-1 Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBRB20XXCT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Average Rectified Output Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRWM Condition - Io 50Hz Full Sine Wave Resistive Load @TC = 80 °C 20 A 8.3ms,50Hz Full Sine Wave, 1Cycle Non-repetitive 180 A IFSM 50 60 Max. MBR2050CT MBR2060CT Units V • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0034, Rev. A Electrical Characteristics: Characteristics Forward Voltage Drop* Symbol VF1 VF2 Reverse Current (per leg)* IR1 IR2 Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change * CT LS dv/dt Condition @ 10A, Pulse, TJ = 25 ℃ @ 20 A, Pulse, TJ = 25 °C @ 10A, Pulse, TJ = 125 ℃ @ 20A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 ℃ @VR = rated VR TJ = 125 ℃ @VR = 5V, TC = 25 ℃ fSIG = 1MHz Measured lead to lead 5 mm from package body - Max. 0.80 0.95 0.70 0.85 1.0 Units V 150 mA 400 pF 8.0 nH 10,000 V/s V mA Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Typical Thermal Resistance Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg RθJC RθCS wt Condition DC operation Mounting surface, smooth and greased (only for TO-220) ITO-220AB Specification -55 to +150 -55 to +150 Units °C °C 2.3 °C/W 0.50 °C/W 2 g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0034, Rev. A 10 TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 Instantaneous Reverse Current-IR(MA) 1000 1 TJ=125℃ 0.1 0.01 0.001 TJ=25℃ 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) 10000 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0034, Rev. A MBR2050/2060CT MBRB2050/2060CT MBR2050/2060CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •