IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling 2 1 * RoHS compliant 3 Type Package IDB30E120 PG-TO263-3-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D30E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 50 TC=90°C 30 Surge non repetitive forward current I FSM 102 I FRM 76.5 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 138 TC=90°C 66 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+150 245 °C °C reflow soldering, MSL1 Rev.2.2 Page 1 2007-09-01 IDB30E120 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 2500 Forward voltage drop VF V IF=30A, T j=25°C - 1.65 2.15 IF=30A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2 2007-09-01 IDB30E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 243 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C - 355 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C - 380 - Peak reverse current A I rrm V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C - 23.7 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C - 28.3 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=150°C - 29.5 - Reverse recovery charge nC Q rr V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 2630 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C - 4700 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=150°C - 5200 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 6 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C - 7.4 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C - 7.5 - Reverse recovery softness factor Rev.2.2 S Page 3 2007-09-01 IDB30E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 55 140 W A 120 45 100 40 90 35 IF P tot 110 80 30 70 25 60 50 20 40 15 30 10 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 90 2.4 A 60A V IF 60 -55°C 25°C 100°C 150°C VF 70 2 50 1.8 30A 40 30 1.6 15A 20 1.4 10 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2007-09-01 IDB30E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 1100 6500 ns nC 60A 900 trr 800 Q rr 5500 60A 30A 15A 5000 30A 700 4500 600 4000 500 3000 300 200 200 15A 3500 400 300 400 500 600 700 800 2500 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 18 35 A 14 60A 30A 15A S Irr 25 60A 30A 15A 12 20 10 15 8 10 5 200 Rev.2.2 6 300 400 500 600 700 800 4 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2007-09-01 IDB30E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E120 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.2 Page 6 2007-09-01 IDB30E120 Rev.2.2 Page 7 2007-09-01 IDB30E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 2007-09-01