SeCoS BC327 Pnp plastic-encapsulate transistor Datasheet

BC327 / BC328
PNP Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
TO-92
FEATURE
G
H
Power Dissipation
1Collector
2Base
3Emitter
J
CLASSIFICATION OF hFE (1)
A
Product-Rank
BC327-16
BC327-25
BC327-40
Product-Rank
BC328-16
BC328-25
BC328-40
Range
100~250
160~400
250~630
D
B
REF.
A
B
C
D
E
F
G
H
J
K
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
Collector
1
2
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Symbol
BC327
BC328
BC327
BC328
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-50
-30
-45
-25
-5
-800
625
150, -55~150
Unit
V
V
V
mA
mW
°C
Any changes of specification will not be informed individually.
Page 1 of 3
BC327 / BC328
PNP Plastic-Encapsulate Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown
BC327
Voltage
BC328
Collector to Emitter Breakdown BC327
Voltage
BC328
Emitter to Base Breakdown Voltage
BC327
Collector Cut-Off Current
BC328
BC327
Collector Cut-Off Current
BC328
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
VBE
fT
Cob
Min.
Typ.
Max.
-50
-30
-45
-25
-5
100
40
260
-
12
-0.1
-0.1
-0.2
-0.2
-0.1
630
-0.7
-1.2
-1.2
-
Unit
Test Conditions
V
IC= -100µA, IE=0
V
IC= -10mA, IB=0
V
IE= -10µA, IC=0
VCB= -45V, IE=0
µA
VCB= -25V, IE=0
VCE= -40V, IB=0
µA
VCE= -20V, IB=0
µA VEB= -4V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
V IC= -500mA, IB= -50mA
V IC= -500mA, IB= -50mA
V VCE= -1V, IC= -300mA
MHz VCE= -5V, IC= -10mA, f=100MHz
pF VCB= -10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 2 of 3
BC327 / BC328
Elektronische Bauelemente
PNP Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
04-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3
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