BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 2Base 3Emitter J CLASSIFICATION OF hFE (1) A Product-Rank BC327-16 BC327-25 BC327-40 Product-Rank BC328-16 BC328-25 BC328-40 Range 100~250 160~400 250~630 D B REF. A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Symbol BC327 BC328 BC327 BC328 VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -30 -45 -25 -5 -800 625 150, -55~150 Unit V V V mA mW °C Any changes of specification will not be informed individually. Page 1 of 3 BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown BC327 Voltage BC328 Collector to Emitter Breakdown BC327 Voltage BC328 Emitter to Base Breakdown Voltage BC327 Collector Cut-Off Current BC328 BC327 Collector Cut-Off Current BC328 Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE fT Cob Min. Typ. Max. -50 -30 -45 -25 -5 100 40 260 - 12 -0.1 -0.1 -0.2 -0.2 -0.1 630 -0.7 -1.2 -1.2 - Unit Test Conditions V IC= -100µA, IE=0 V IC= -10mA, IB=0 V IE= -10µA, IC=0 VCB= -45V, IE=0 µA VCB= -25V, IE=0 VCE= -40V, IB=0 µA VCE= -20V, IB=0 µA VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA V IC= -500mA, IB= -50mA V IC= -500mA, IB= -50mA V VCE= -1V, IC= -300mA MHz VCE= -5V, IC= -10mA, f=100MHz pF VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 2 of 3 BC327 / BC328 Elektronische Bauelemente PNP Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 3